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Title: Structure and physical properties of BaCuTeF

Abstract

The compound BaCuTeF has been prepared by using high-temperature reaction methods, and its structure has been established via Rietveld refinement of powder X-ray diffraction data. It crystallizes in the tetragonal space group P4/nmm (No. 129) with Z=2, a=4.4297 (1), c=9.3706 (1) A, and V=183.87 (1) A{sup 3}; refinement residuals include R {sub p}/wR {sub p}/R {sub Bragg} (%)=6.72/4.42/5.72. A band gap of 2.3 eV is estimated from wavelength-dependent diffuse reflectance measurements. Room-temperature conductivities of pressed pellets are 6-8 S/cm, and variable-temperature Seebeck and electrical-conductivity measurements reveal p-type degenerate semiconductor behavior. - Graphical abstract: The telluride fluoride BaCuTeF has been synthesized and structurally characterized through Rietveld refinement of X-ray diffraction data. It crystallizes in the tetragonal structure of LaCuOS. Optical and transport measurements have been used to establish the material as a degenerate p-type semiconductor with a band gap near 2.3 eV.

Authors:
 [1];  [2];  [3];  [2];  [4]
  1. Department of Chemistry, 153 Gilbert Hall, Oregon State University, Corvallis, OR 97331-4003 (United States)
  2. Department of Physics, 301 Weniger Hall, Oregon State University, Corvallis, OR 97331-6507 (United States)
  3. Department of Chemical Engineering, 102 Gleeson Hall, Oregon State University, Corvallis, OR 97331-2702 (United States)
  4. Department of Chemistry, 153 Gilbert Hall, Oregon State University, Corvallis, OR 97331-4003 (United States), E-mail: douglas.keszler@oregonstate.edu
Publication Date:
OSTI Identifier:
21015823
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Solid State Chemistry; Journal Volume: 180; Journal Issue: 5; Other Information: DOI: 10.1016/j.jssc.2007.03.021; PII: S0022-4596(07)00127-2; Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; BARIUM COMPOUNDS; COPPER COMPOUNDS; ELECTRIC CONDUCTIVITY; EV RANGE 01-10; FLUORIDES; SEMICONDUCTOR MATERIALS; SPACE GROUPS; TELLURIDES; TEMPERATURE RANGE 0273-0400 K; TETRAGONAL LATTICES; X-RAY DIFFRACTION

Citation Formats

Park, Cheol-Hee, Kykyneshi, Robert, Yokochi, Alexandre, Tate, Janet, and Keszler, Douglas A. Structure and physical properties of BaCuTeF. United States: N. p., 2007. Web. doi:10.1016/j.jssc.2007.03.021.
Park, Cheol-Hee, Kykyneshi, Robert, Yokochi, Alexandre, Tate, Janet, & Keszler, Douglas A. Structure and physical properties of BaCuTeF. United States. doi:10.1016/j.jssc.2007.03.021.
Park, Cheol-Hee, Kykyneshi, Robert, Yokochi, Alexandre, Tate, Janet, and Keszler, Douglas A. Tue . "Structure and physical properties of BaCuTeF". United States. doi:10.1016/j.jssc.2007.03.021.
@article{osti_21015823,
title = {Structure and physical properties of BaCuTeF},
author = {Park, Cheol-Hee and Kykyneshi, Robert and Yokochi, Alexandre and Tate, Janet and Keszler, Douglas A.},
abstractNote = {The compound BaCuTeF has been prepared by using high-temperature reaction methods, and its structure has been established via Rietveld refinement of powder X-ray diffraction data. It crystallizes in the tetragonal space group P4/nmm (No. 129) with Z=2, a=4.4297 (1), c=9.3706 (1) A, and V=183.87 (1) A{sup 3}; refinement residuals include R {sub p}/wR {sub p}/R {sub Bragg} (%)=6.72/4.42/5.72. A band gap of 2.3 eV is estimated from wavelength-dependent diffuse reflectance measurements. Room-temperature conductivities of pressed pellets are 6-8 S/cm, and variable-temperature Seebeck and electrical-conductivity measurements reveal p-type degenerate semiconductor behavior. - Graphical abstract: The telluride fluoride BaCuTeF has been synthesized and structurally characterized through Rietveld refinement of X-ray diffraction data. It crystallizes in the tetragonal structure of LaCuOS. Optical and transport measurements have been used to establish the material as a degenerate p-type semiconductor with a band gap near 2.3 eV.},
doi = {10.1016/j.jssc.2007.03.021},
journal = {Journal of Solid State Chemistry},
number = 5,
volume = 180,
place = {United States},
year = {Tue May 15 00:00:00 EDT 2007},
month = {Tue May 15 00:00:00 EDT 2007}
}