Thermoelectric properties of Ag-doped n-type (Bi{sub 2}Te{sub 3}){sub 0.9}-(Bi{sub 2-} {sub x} Ag {sub x} Se{sub 3}){sub 0.1} (x=0-0.4) alloys prepared by spark plasma sintering

doi:10.1016/j.jssc.2006.12.010

Title: Thermoelectric properties of Ag-doped n-type (Bi{sub 2}Te{sub 3}){sub 0.9}-(Bi{sub 2-} {sub x} Ag {sub x} Se{sub 3}){sub 0.1} (x=0-0.4) alloys prepared by spark plasma sintering

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Abstract

Ag-doped n-type (Bi{sub 2}Te{sub 3}){sub 0.9}-(Bi{sub 2-} {sub x} Ag {sub x} Se{sub 3}){sub 0.1} (x=0-0.4) alloys were prepared by spark plasma sintering and their physical properties evaluated. When at low Ag content (x=0.05), the temperature dependence of the lattice thermal conductivity follows the trend of (Bi{sub 2}Te{sub 3}){sub 0.9}-(Bi{sub 2}Se{sub 3}){sub 0.1}; while at higher Ag content, a relatively rapid reduction above 400 K can be observed due possibly to the enhancement of scattering of phonons by the increased defects. The Seebeck coefficient increases with Ag content, with some loss of electrical conductivity, but the maximum dimensionless figure of merit ZT can be obtained to be 0.86 for the alloy with x=0.4 at 505 K, about 0.2 higher than that of the alloy (Bi{sub 2}Te{sub 3}){sub 0.9}-(Bi{sub 2}Se{sub 3}){sub 0.1} without Ag-doping. - Graphical abstract: The temperature dependence of dimensionless thermoelectric figure of merit ZT for different (Bi{sub 2}Te{sub 3}){sub 0.9}-(Bi{sub 2-} {sub x} Ag {sub x} Se{sub 3}){sub 0.1} (x=0-0.4) alloys prepared by spark plasma sintering.

Authors:

Cui, J.L. ^[1]; Xiu, W.J. ^[2]; School of Materials Science and Engineering, China University of Mining and Technology, Xuzhou 221008 ^[3]; Mao, L.D. ^[2]; College of Chemical Engineering and Materials Science, Zhejiang University of Technology, Hangzhou 310014 ^[3]; Ying, P.Z. ^[4]; Jiang, L. ^[4]; Qian, X. ^[5]

School of Mechanical Engineering, Ningbo University of Technology, Ningbo 315016 (China), E-mail: cuijl@nbip.net
School of Mechanical Engineering, Ningbo University of Technology, Ningbo 315016 (China)
(China)
School of Materials Science and Engineering, China University of Mining and Technology, Xuzhou 221008 (China)
College of Chemical Engineering and Materials Science, Zhejiang University of Technology, Hangzhou 310014 (China)

Publication Date:: Thu Mar 15 00:00:00 EDT 2007

OSTI Identifier:: 21015759

Resource Type:: Journal Article

Resource Relation:: Journal Name: Journal of Solid State Chemistry; Journal Volume: 180; Journal Issue: 3; Other Information: DOI: 10.1016/j.jssc.2006.12.010; PII: S0022-4596(06)00649-9; Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA)

Country of Publication:: United States

Language:: English

Subject:: 37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; BISMUTH ALLOYS; CRYSTAL DEFECTS; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; PLASMA; SELENIUM ALLOYS; SILVER ALLOYS; SINTERING; TELLURIUM ALLOYS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K; THERMAL CONDUCTIVITY; THERMOELECTRIC PROPERTIES

Citation Formats


                    Cui, J.L., Xiu, W.J., School of Materials Science and Engineering, China University of Mining and Technology, Xuzhou 221008, Mao, L.D., College of Chemical Engineering and Materials Science, Zhejiang University of Technology, Hangzhou 310014, Ying, P.Z., Jiang, L., and Qian, X. Thermoelectric properties of Ag-doped n-type (Bi{sub 2}Te{sub 3}){sub 0.9}-(Bi{sub 2-} {sub x} Ag {sub x} Se{sub 3}){sub 0.1} (x=0-0.4) alloys prepared by spark plasma sintering.  United States: N. p., 2007. 
        Web.  doi:10.1016/j.jssc.2006.12.010.

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                    Cui, J.L., Xiu, W.J., School of Materials Science and Engineering, China University of Mining and Technology, Xuzhou 221008, Mao, L.D., College of Chemical Engineering and Materials Science, Zhejiang University of Technology, Hangzhou 310014, Ying, P.Z., Jiang, L., & Qian, X. Thermoelectric properties of Ag-doped n-type (Bi{sub 2}Te{sub 3}){sub 0.9}-(Bi{sub 2-} {sub x} Ag {sub x} Se{sub 3}){sub 0.1} (x=0-0.4) alloys prepared by spark plasma sintering.  United States.  doi:10.1016/j.jssc.2006.12.010.

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                    Cui, J.L., Xiu, W.J., School of Materials Science and Engineering, China University of Mining and Technology, Xuzhou 221008, Mao, L.D., College of Chemical Engineering and Materials Science, Zhejiang University of Technology, Hangzhou 310014, Ying, P.Z., Jiang, L., and Qian, X. Thu .  
        "Thermoelectric properties of Ag-doped n-type (Bi{sub 2}Te{sub 3}){sub 0.9}-(Bi{sub 2-} {sub x} Ag {sub x} Se{sub 3}){sub 0.1} (x=0-0.4) alloys prepared by spark plasma sintering".  United States.  
        doi:10.1016/j.jssc.2006.12.010.

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@article{osti_21015759,

  title        = {Thermoelectric properties of Ag-doped n-type (Bi{sub 2}Te{sub 3}){sub 0.9}-(Bi{sub 2-} {sub x} Ag {sub x} Se{sub 3}){sub 0.1} (x=0-0.4) alloys prepared by spark plasma sintering},

  author       = {Cui, J.L. and Xiu, W.J. and School of Materials Science and Engineering, China University of Mining and Technology, Xuzhou 221008 and Mao, L.D. and College of Chemical Engineering and Materials Science, Zhejiang University of Technology, Hangzhou 310014 and Ying, P.Z. and Jiang, L. and Qian, X.},

  abstractNote = {Ag-doped n-type (Bi{sub 2}Te{sub 3}){sub 0.9}-(Bi{sub 2-} {sub x} Ag {sub x} Se{sub 3}){sub 0.1} (x=0-0.4) alloys were prepared by spark plasma sintering and their physical properties evaluated. When at low Ag content (x=0.05), the temperature dependence of the lattice thermal conductivity follows the trend of (Bi{sub 2}Te{sub 3}){sub 0.9}-(Bi{sub 2}Se{sub 3}){sub 0.1}; while at higher Ag content, a relatively rapid reduction above 400 K can be observed due possibly to the enhancement of scattering of phonons by the increased defects. The Seebeck coefficient increases with Ag content, with some loss of electrical conductivity, but the maximum dimensionless figure of merit ZT can be obtained to be 0.86 for the alloy with x=0.4 at 505 K, about 0.2 higher than that of the alloy (Bi{sub 2}Te{sub 3}){sub 0.9}-(Bi{sub 2}Se{sub 3}){sub 0.1} without Ag-doping. - Graphical abstract: The temperature dependence of dimensionless thermoelectric figure of merit ZT for different (Bi{sub 2}Te{sub 3}){sub 0.9}-(Bi{sub 2-} {sub x} Ag {sub x} Se{sub 3}){sub 0.1} (x=0-0.4) alloys prepared by spark plasma sintering.},

  doi          = {10.1016/j.jssc.2006.12.010},

  journal      = {Journal of Solid State Chemistry},

  number       = 3,

  volume       = 180,

  place        = {United States},

  year         = {Thu Mar 15 00:00:00 EDT 2007},

  month        = {Thu Mar 15 00:00:00 EDT 2007}

}

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DOI: 10.1016/j.jssc.2006.12.010

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Thermoelectric properties of Cu-doped n-type (Bi{sub 2}Te{sub 3}){sub 0.9}-(Bi{sub 2-x}Cu{sub x}Se{sub 3}){sub 0.1}(x=0-0.2) alloys

Cui, J.L. ; Mao, L.D. ; School of Mechanical Engineering, Ningbo University of Technology, Ningbo 315016 ; ... - Journal of Solid State Chemistry

n-Type (Bi{sub 2}Te{sub 3}){sub 0.9}-(Bi{sub 2-x}Cu{sub x}Se{sub 3}){sub 0.1} (x=0-0.2) alloys with Cu substitution for Bi were prepared by spark plasma-sintering technique and their structural and thermoelectric properties were evaluated. Rietveld analysis reveals that approximate 9.0% of Bi atomic sites are occupied by Cu atoms and less than 4.0 wt% second phase Cu{sub 2.86}Te{sub 2} precipitated in the Cu-doped parent alloys. Measurements show that an introduction of a small amount of Cu (x{<=}0.1) can reduce the lattice thermal conductivity ({kappa}{sub L}), and improve the electrical conductivity and Seebeck coefficient. An optimal dimensionless figure of merit (ZT) value of 0.98 ismore »« less
DOI: 10.1016/j.jssc.2007.10.013
Thermoelectric properties of p-type pseudo-binary (Ag{sub 0.365}Sb{sub 0.558}Te) {sub x} -(Bi{sub 0.5}Sb{sub 1.5}Te{sub 3}){sub 1-} {sub x} (x=0-1.0) alloys prepared by spark plasma sintering

Cui, J.L. ; Xue, H.F. ; School of Mechanical Engineering, Ningbo University of Technology, Ningbo 315016 ; ... - Journal of Solid State Chemistry

In this paper, pseudo-binary (Ag{sub 0.365}Sb{sub 0.558}Te) {sub x} -(Bi{sub 0.5}Sb{sub 1.5}Te{sub 3}){sub 1-} {sub x} (x=0-1.0) alloys were prepared using spark plasma sintering technique, and the composition-dependent thermoelectric properties were evaluated. Electrical conductivities range from 7.9x10{sup 4} to 15.6x10{sup 4} {omega}{sup -1} m{sup -1} at temperatures of 507 and 318 K, respectively, being about 3.0 and 8.5 times those of Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} alloy at the corresponding temperatures. The optimal dimensionless figure of merit (ZT) of the sample with molar fraction x=0.025 reaches 1.1 at 478 K, whereas that of the ternary Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} alloy ismore »« less
DOI: 10.1016/j.jssc.2006.08.016
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Stary, Z. ; Navratil, J. ; Plechecek, T. - AIP Conference Proceedings

The dependence of the electrical conductivity, thermoelectric power and figure of merit on the grain size in cold pressed Bi{sub 1.8}Sb{sub 0.2{minus}{ital x}}In{sub {ital x}}Te{sub 2.85}Se{sub 0.15}, where {ital x}=0, 0.01, 0.02 was measured. The influence of the indium content and grain size on the thermoelectric properties is discussed. In this materials the changes of the free carrier concentration are due to the interaction between antisite-defects and vacancies during the sintering. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
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Glazou, U.M. ; Yatmanov, Y.V. - Inorg. Mater. (Engl. Transl.); (United States)

This paper investigates the microinhomogeneities in the alloys Bi/sub 2/ Te /SUB 2.4/ Se /SUB 0.6/ and Bi /SUB 0.52/ Sb /SUB 1.48/ Te/sub 3/ prepared by ultrafast (ca 10 K/sec) cooling of the melt and investigates the temperature dependence of their thermoelectric properties followed by the determination of the thermoelectric figure of merit. The distribution of the components in the cross section of the samples was analyzed by a microanalyzer. The results of the rapidly quenched samples and those prepared by the traditional methods are shown. X-ray microprobe investigations show that the samples differed in chemical homogeneity by amore » high degree.« less
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Seo, J. ; Park, K. ; Lee, C. ; ...

The p-type Te-doped Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} and n-type SbI{sub 3}-doped Bi{sub 2}Te{sub 2.85}Se{sub 0.15} thermoelectric compounds were fabricated by hot pressing in the temperature range of 380 to 440 C under 200 MPa in Ar. Both the compounds were highly dense and showed high crystalline quality. The grains of the compounds were preferentially oriented and contained many dislocations through the hot pressing. The fracture path followed the transgranular cleavage planes, which are perpendicular to the c-axis. In addition, with increasing the pressing temperature, the figure of merit was increased. The highest values of figure of merit for the p-more »« less