Study of annealing time on sol-gel indium tin oxide films on glass
- Sol-Gel Division, Central Glass and Ceramic Research Institute, Kolkata - 700 032 (India)
- Thermal Insulation and Heat Transfer Division, Bayerisches Zentrum Fur Angewandte Energieforschung E. V. (ZAE Bayern), Am Hubland, Wurzburg, D-97074 (Germany)
Indium and tin salt-based precursors maintaining In:Sn atomic ratio as 90:10 were utilized for the development of sol-gel dip coated indium tin oxide films (ITO) on SiO{sub 2} coated ({approx} 200 nm thickness) soda lime silica glass substrate. The gel films were initially cured in air at {approx} 450 deg. C to obtain oxide films of physical thickness {approx} 250 nm. These were then annealed in 95% Ar-5% H{sub 2} atmosphere at {approx} 500 deg. C. The annealing time was varied from 0.5 h to 5 h. Variation of annealing time did not show any considerable change of transmittance in the visible region. Thermal emissivity ({epsilon} {sub d}, 0.67-0.79) of the films were evaluated from their hemispherical spectral reflectance. These passed through a minima with increasing annealing time as the reflectivity of the films in the mid-IR passed through a maxima. The microstructure of the films revealed systematic growth of the ITO grains. XRD and XPS studies revealed the presence of both In and Sn metals in addition to the metal oxides. The energy dispersive X-ray (EDX) analysis showed little lowering of tin content in the films with increasing annealing time.
- OSTI ID:
- 21003569
- Journal Information:
- Materials Characterization, Vol. 58, Issue 7; Other Information: DOI: 10.1016/j.matchar.2006.07.011; PII: S1044-5803(06)00246-4; Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 1044-5803
- Country of Publication:
- United States
- Language:
- English
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