skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Microstructure characterization of InAs{sub 0.93}Sb{sub 0.07} films grown by ramp-cooled liquid phase epitaxy

Abstract

InAs{sub 0.93}Sb{sub 0.07} alloy thin films were grown by ramp-cooled liquid phase epitaxy on (100) InAs substrate using horizontally sliding multi-wells graphite boats. The systematic microstructural characterizations of the epi-grown films were analyzed by X-ray diffraction, scanning electronic microscopy and energy dispersive spectra. Four typical surface morphologies of the films were observed, which depend sensitively on growth parameters such as the growth temperature, the substrate etching time, the flux of the hydrogen, and the cooling range and rate. The film shows high crystal perfection with (100) orientation, as evidenced by X-ray measurement. The crystal quality of the epilayer was evaluated by the X-ray double axes diffraction, and the dislocation density was estimated through fitting the (200) and (400) rocking curves by Gaussian lineshape.

Authors:
 [1];  [1];  [1];  [2]
  1. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China)
  2. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China). E-mail: ndai@mail.sitp.ac.cn
Publication Date:
OSTI Identifier:
21003543
Resource Type:
Journal Article
Resource Relation:
Journal Name: Materials Characterization; Journal Volume: 58; Journal Issue: 3; Other Information: DOI: 10.1016/j.matchar.2006.05.009; PII: S1044-5803(06)00159-8; Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALLOYS; COOLING; CRYSTALS; DISLOCATIONS; ETCHING; GRAPHITE; INDIUM ARSENIDES; LIQUID PHASE EPITAXY; MICROSCOPY; MICROSTRUCTURE; MORPHOLOGY; NEUTRON DIFFRACTION; SUBSTRATES; THIN FILMS; X-RAY DIFFRACTION

Citation Formats

Deng, H.Y., Hong, X.K., Fang, W.Z., and Dai, N. Microstructure characterization of InAs{sub 0.93}Sb{sub 0.07} films grown by ramp-cooled liquid phase epitaxy. United States: N. p., 2007. Web. doi:10.1016/j.matchar.2006.05.009.
Deng, H.Y., Hong, X.K., Fang, W.Z., & Dai, N. Microstructure characterization of InAs{sub 0.93}Sb{sub 0.07} films grown by ramp-cooled liquid phase epitaxy. United States. doi:10.1016/j.matchar.2006.05.009.
Deng, H.Y., Hong, X.K., Fang, W.Z., and Dai, N. Thu . "Microstructure characterization of InAs{sub 0.93}Sb{sub 0.07} films grown by ramp-cooled liquid phase epitaxy". United States. doi:10.1016/j.matchar.2006.05.009.
@article{osti_21003543,
title = {Microstructure characterization of InAs{sub 0.93}Sb{sub 0.07} films grown by ramp-cooled liquid phase epitaxy},
author = {Deng, H.Y. and Hong, X.K. and Fang, W.Z. and Dai, N.},
abstractNote = {InAs{sub 0.93}Sb{sub 0.07} alloy thin films were grown by ramp-cooled liquid phase epitaxy on (100) InAs substrate using horizontally sliding multi-wells graphite boats. The systematic microstructural characterizations of the epi-grown films were analyzed by X-ray diffraction, scanning electronic microscopy and energy dispersive spectra. Four typical surface morphologies of the films were observed, which depend sensitively on growth parameters such as the growth temperature, the substrate etching time, the flux of the hydrogen, and the cooling range and rate. The film shows high crystal perfection with (100) orientation, as evidenced by X-ray measurement. The crystal quality of the epilayer was evaluated by the X-ray double axes diffraction, and the dislocation density was estimated through fitting the (200) and (400) rocking curves by Gaussian lineshape.},
doi = {10.1016/j.matchar.2006.05.009},
journal = {Materials Characterization},
number = 3,
volume = 58,
place = {United States},
year = {Thu Mar 15 00:00:00 EDT 2007},
month = {Thu Mar 15 00:00:00 EDT 2007}
}