skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Microstructure characterization of InAs{sub 0.93}Sb{sub 0.07} films grown by ramp-cooled liquid phase epitaxy

Abstract

InAs{sub 0.93}Sb{sub 0.07} alloy thin films were grown by ramp-cooled liquid phase epitaxy on (100) InAs substrate using horizontally sliding multi-wells graphite boats. The systematic microstructural characterizations of the epi-grown films were analyzed by X-ray diffraction, scanning electronic microscopy and energy dispersive spectra. Four typical surface morphologies of the films were observed, which depend sensitively on growth parameters such as the growth temperature, the substrate etching time, the flux of the hydrogen, and the cooling range and rate. The film shows high crystal perfection with (100) orientation, as evidenced by X-ray measurement. The crystal quality of the epilayer was evaluated by the X-ray double axes diffraction, and the dislocation density was estimated through fitting the (200) and (400) rocking curves by Gaussian lineshape.

Authors:
 [1];  [1];  [1];  [2]
  1. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China)
  2. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China). E-mail: ndai@mail.sitp.ac.cn
Publication Date:
OSTI Identifier:
21003543
Resource Type:
Journal Article
Resource Relation:
Journal Name: Materials Characterization; Journal Volume: 58; Journal Issue: 3; Other Information: DOI: 10.1016/j.matchar.2006.05.009; PII: S1044-5803(06)00159-8; Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALLOYS; COOLING; CRYSTALS; DISLOCATIONS; ETCHING; GRAPHITE; INDIUM ARSENIDES; LIQUID PHASE EPITAXY; MICROSCOPY; MICROSTRUCTURE; MORPHOLOGY; NEUTRON DIFFRACTION; SUBSTRATES; THIN FILMS; X-RAY DIFFRACTION

Citation Formats

Deng, H.Y., Hong, X.K., Fang, W.Z., and Dai, N.. Microstructure characterization of InAs{sub 0.93}Sb{sub 0.07} films grown by ramp-cooled liquid phase epitaxy. United States: N. p., 2007. Web. doi:10.1016/j.matchar.2006.05.009.
Deng, H.Y., Hong, X.K., Fang, W.Z., & Dai, N.. Microstructure characterization of InAs{sub 0.93}Sb{sub 0.07} films grown by ramp-cooled liquid phase epitaxy. United States. doi:10.1016/j.matchar.2006.05.009.
Deng, H.Y., Hong, X.K., Fang, W.Z., and Dai, N.. Thu . "Microstructure characterization of InAs{sub 0.93}Sb{sub 0.07} films grown by ramp-cooled liquid phase epitaxy". United States. doi:10.1016/j.matchar.2006.05.009.
@article{osti_21003543,
title = {Microstructure characterization of InAs{sub 0.93}Sb{sub 0.07} films grown by ramp-cooled liquid phase epitaxy},
author = {Deng, H.Y. and Hong, X.K. and Fang, W.Z. and Dai, N.},
abstractNote = {InAs{sub 0.93}Sb{sub 0.07} alloy thin films were grown by ramp-cooled liquid phase epitaxy on (100) InAs substrate using horizontally sliding multi-wells graphite boats. The systematic microstructural characterizations of the epi-grown films were analyzed by X-ray diffraction, scanning electronic microscopy and energy dispersive spectra. Four typical surface morphologies of the films were observed, which depend sensitively on growth parameters such as the growth temperature, the substrate etching time, the flux of the hydrogen, and the cooling range and rate. The film shows high crystal perfection with (100) orientation, as evidenced by X-ray measurement. The crystal quality of the epilayer was evaluated by the X-ray double axes diffraction, and the dislocation density was estimated through fitting the (200) and (400) rocking curves by Gaussian lineshape.},
doi = {10.1016/j.matchar.2006.05.009},
journal = {Materials Characterization},
number = 3,
volume = 58,
place = {United States},
year = {Thu Mar 15 00:00:00 EDT 2007},
month = {Thu Mar 15 00:00:00 EDT 2007}
}
  • We employ transmission electron microscopy to explore the reason for large piezoelectricity (d{sub 33}≈400pC/N) in a Pb-free 0.96(K{sub 0.5}Na{sub 0.5}){sub 0.95}Li{sub 0.05}Nb{sub 0.93}Sb{sub 0.07}O{sub 3} −0.04BaZrO{sub 3} ceramic from microstructure. The result shows that the high piezoelectricity corresponds to a miniaturized nanodomain configuration in a domain hierarchy. The nanodomains disappear on heating accompanied by a reduction in d{sub 33} value. Further convergent beam electron diffraction study reveals a coexistence of tetragonal and orthorhombic phase, which indicates that large piezoelectricity of KNLNS{sub 0.07}-BZ may stem from easy polarization rotation due to low polarization anisotropy on the tetragonal-orthorhombic phase boundary.
  • The piezoceramic 0.96(K{sub 0.5}Na{sub 0.5}){sub 0.95}Li{sub 0.05}Nb{sub 0.93}Sb{sub 0.07}O{sub 3}−0.04BaZrO{sub 3} (KNLNS{sub 0.07}-BZ), which shows large piezoelectric response (d{sub 33} ≈ 425 pC/N), has been considered as one of the promising Pb-free substitutions for Pb(Zr,Ti)O{sub 3}. In this paper, we investigate the phase transition sequence for KNLNS{sub 0.07}-BZ by employing the dielectric measurement, mechanical spectroscopy, as well as Raman spectroscopy. Two ferroelectric-ferroelectric transitions have been detected by inspecting anomalies in the spectra, indicating the existence of three ferroelectric phases. Moreover, in-situ X-ray diffraction study has been further performed on KNLNS{sub 0.07}-BZ to identify the crystal structure for each phase. Themore » result reveals that the phase sequence for KNLNS{sub 0.07}-BZ evolves from tetragonal (T) to rhombohedral (R) via an intermediate orthorhombic (O) phase. And the piezoelectric-optimal region for KNLNS{sub 0.07}-BZ locates on a T-O boundary rather than the previously reported T-R boundary. Strong piezoelectricity may stem from the easier polarization rotation on the T-O boundary with reduced polarization anisotropy.« less
  • Double heterostructures consisting of InAs/sub 0.91/ Sb/sub 0.09/ active layers with Al/sub 0.5/ Ga/sub 0.5/Sb cladding layers were grown by molecular beam epitaxy on GaSb substrates. Optically pumped laser emission at 3.9 ..mu..m was observed from 80 to 135 K with an exponentially dependent threshold with T/sub 0/ = 17 K. At 80 K the threshold corresponds to an effective current of 4 kA/cm/sup 2/. This value represents a significant reduction when compared with previous results. For a 1-..mu..m-thick active layer the full angular width of the far field at the half intensity point normal to the junction is 40/supmore » 0/ and is in reasonable agreement with the width calculated from the guide and cladding refractive indices.« less
  • The structural, electrical, dielectric, magnetic and magnetoelectric properties of (x)Ni{sub 0.8}Zn{sub 0.2}Fe{sub 2}O{sub 4} + (1 - x)Pb{sub 0.93}La{sub 0.07}(Zr{sub 0.60}Ti{sub 0.40})O{sub 3} (x = 0, 0.15, 0.30, 0.45 and 1) have been studied by means of various experimental techniques. Polycrystalline samples of this series have been prepared by the double sintering ceramic method. X-ray diffraction data analysis revealed purity of the composites. Microstructural analysis using scanning electron microscopy mode depicts the presence of two phases in contact with each other. Dielectric properties were studied at and well above room temperature. Temperature dependent variation of the dielectric constant show diffusedmore » phase transition which can be well described by fitting the Lorentz-type relation, {epsilon}{sub A}/{epsilon}=1+(T-T{sub A}){sup 2}/2{delta}{sub A}{sup 2}. Observation of well-saturated ferroelectric hysteresis loop and magnetic hysteresis loop for composites indicates that ferroelectric and magnetic ordering exist simultaneously at room temperature. The static value of magneto electric voltage coefficient ({alpha}{sub E}) has been studied as a function of magnetic field at room temperature for all the composites. The maximum value of {alpha}{sub E} is 7.53 mV/(cm Oe) for 85% PLZT-15% NZFO composites.« less
  • Molecular beam epitaxy has been used to grow InAs/sub 1-x/Sb/sub x/ active layers on GaSb substrates. Lattice matches of better than 10/sup -3/ were obtained with xapprox. =0.09. Index waveguiding of the relatively low refractive index InAs/sub 1-x/Sb/sub x/ is obtained by using an adjacent GaSb guiding layer and a lower refractive index Al/sub 0.5/Ga/sub 0.5/Sb cladding layer. Optically pumped laser emission at 3.82 ..mu..m has been observed from 77 to 135 K with a T/sub 0/ = 15.9 K.