Microstructure characterization of InAs{sub 0.93}Sb{sub 0.07} films grown by ramp-cooled liquid phase epitaxy
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China)
InAs{sub 0.93}Sb{sub 0.07} alloy thin films were grown by ramp-cooled liquid phase epitaxy on (100) InAs substrate using horizontally sliding multi-wells graphite boats. The systematic microstructural characterizations of the epi-grown films were analyzed by X-ray diffraction, scanning electronic microscopy and energy dispersive spectra. Four typical surface morphologies of the films were observed, which depend sensitively on growth parameters such as the growth temperature, the substrate etching time, the flux of the hydrogen, and the cooling range and rate. The film shows high crystal perfection with (100) orientation, as evidenced by X-ray measurement. The crystal quality of the epilayer was evaluated by the X-ray double axes diffraction, and the dislocation density was estimated through fitting the (200) and (400) rocking curves by Gaussian lineshape.
- OSTI ID:
- 21003543
- Journal Information:
- Materials Characterization, Vol. 58, Issue 3; Other Information: DOI: 10.1016/j.matchar.2006.05.009; PII: S1044-5803(06)00159-8; Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 1044-5803
- Country of Publication:
- United States
- Language:
- English
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