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Title: Properties of tungsten-doped Bi{sub 4}Ti{sub 3}O{sub 12}-SrBi{sub 4}Ti{sub 4}O{sub 15} intergrowth ferroelectrics

Abstract

Ferroelectric and dielectric properties of tungsten-doped Bi{sub 4}Ti{sub 3}O{sub 12}-SrBi{sub 4}Ti{sub 4}O{sub 15} ceramics were investigated. A pure phase of all the samples is confirmed by X-ray diffraction patterns. The remanent polarization (2P {sub r}) of the samples increases initially and reaches its maximum value of 43.2 {mu}C/cm{sup 2} when W content is 0.03, which is over twice as large as that of non-doped one, then decreases with further doping. The coercive field (E {sub c}) shows a weak tungsten content dependency. It is considered that the enlarged 2P {sub r} could be mainly attributed to the restraint of oxygen vacancies as well as the weakening of their mobility. The Curie temperature decreases a little with increasing doping content, which indicates the good thermal stability is not deteriorated by tungsten doping.

Authors:
 [1];  [1];  [1];  [2]
  1. College of Physics Science and Technology, Yangzhou University, Yangzhou 225002 (China)
  2. National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008 (China). E-mail: xbchen@yzu.edu.cn
Publication Date:
OSTI Identifier:
21000588
Resource Type:
Journal Article
Resource Relation:
Journal Name: Materials Research Bulletin; Journal Volume: 42; Journal Issue: 2; Other Information: DOI: 10.1016/j.materresbull.2006.06.003; PII: S0025-5408(06)00243-1; Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CERAMICS; CURIE POINT; DIELECTRIC PROPERTIES; DOPED MATERIALS; FERROELECTRIC MATERIALS; OXYGEN; POLARIZATION; TUNGSTEN; VACANCIES; X-RAY DIFFRACTION

Citation Formats

Wang Wei, Zhu Jun, Mao Xiangyu, and Chen Xiaobing. Properties of tungsten-doped Bi{sub 4}Ti{sub 3}O{sub 12}-SrBi{sub 4}Ti{sub 4}O{sub 15} intergrowth ferroelectrics. United States: N. p., 2007. Web. doi:10.1016/j.materresbull.2006.06.003.
Wang Wei, Zhu Jun, Mao Xiangyu, & Chen Xiaobing. Properties of tungsten-doped Bi{sub 4}Ti{sub 3}O{sub 12}-SrBi{sub 4}Ti{sub 4}O{sub 15} intergrowth ferroelectrics. United States. doi:10.1016/j.materresbull.2006.06.003.
Wang Wei, Zhu Jun, Mao Xiangyu, and Chen Xiaobing. Thu . "Properties of tungsten-doped Bi{sub 4}Ti{sub 3}O{sub 12}-SrBi{sub 4}Ti{sub 4}O{sub 15} intergrowth ferroelectrics". United States. doi:10.1016/j.materresbull.2006.06.003.
@article{osti_21000588,
title = {Properties of tungsten-doped Bi{sub 4}Ti{sub 3}O{sub 12}-SrBi{sub 4}Ti{sub 4}O{sub 15} intergrowth ferroelectrics},
author = {Wang Wei and Zhu Jun and Mao Xiangyu and Chen Xiaobing},
abstractNote = {Ferroelectric and dielectric properties of tungsten-doped Bi{sub 4}Ti{sub 3}O{sub 12}-SrBi{sub 4}Ti{sub 4}O{sub 15} ceramics were investigated. A pure phase of all the samples is confirmed by X-ray diffraction patterns. The remanent polarization (2P {sub r}) of the samples increases initially and reaches its maximum value of 43.2 {mu}C/cm{sup 2} when W content is 0.03, which is over twice as large as that of non-doped one, then decreases with further doping. The coercive field (E {sub c}) shows a weak tungsten content dependency. It is considered that the enlarged 2P {sub r} could be mainly attributed to the restraint of oxygen vacancies as well as the weakening of their mobility. The Curie temperature decreases a little with increasing doping content, which indicates the good thermal stability is not deteriorated by tungsten doping.},
doi = {10.1016/j.materresbull.2006.06.003},
journal = {Materials Research Bulletin},
number = 2,
volume = 42,
place = {United States},
year = {Thu Feb 15 00:00:00 EST 2007},
month = {Thu Feb 15 00:00:00 EST 2007}
}
  • The ferroelectric ceramics of Bi{sub 4}Ti{sub 3}O{sub 12}, SrBi{sub 4}Ti{sub 4}O{sub 15}, and lanthanum-doped Bi{sub 4}Ti{sub 3}O{sub 12}-SrBi{sub 4}Ti{sub 4}O{sub 15} were synthesized, and their Raman spectra were investigated. La-doping resulted in the enlargement of remnant polarization of Bi{sub 4}Ti{sub 3}O{sub 12}-SrBi{sub 4}Ti{sub 4}O{sub 15}. The structure of the Bi{sub 2}O{sub 2} layers and TiO{sub 6} octahedra of the intergrowth was found to be different from those of Bi{sub 4}Ti{sub 3}O{sub 12} and SrBi{sub 4}Ti{sub 4}O{sub 15}. La{sup 3+} ions exhibit pronounced selectivity for the occupation of A site as La content is lower than 0.50, and tend to bemore » incorporated into Bi{sub 2}O{sub 2} layers when the La content is higher than 0.50. Lanthanum substitution brings about the structural phase transition in Bi{sub 4}Ti{sub 3}O{sub 12}-SrBi{sub 4}Ti{sub 4}O{sub 15}. The variation of ferroelectric property may be attributed to combined contribution from the decreasing of the oxygen vacancies, the relaxation of the lattice distortion, the destroying of the insulation and the space charge compensation effects of the Bi{sub 2}O{sub 2} slabs.« less
  • Er{sup 3+} doped SrBi{sub 4}Ti{sub 4}O{sub 15} (SBT) bismuth layered-structure ferroelectric ceramics were synthesized by the traditional solid-state method, and their upconversion photoluminescent (UC) properties were investigated as a function of Er{sup 3+} concentration and incident pump power. Green (555 nm) and red (670 nm) emission bands were obtained under 980 nm excitation at room temperature, which corresponded to the radiative transitions from {sup 4}S{sub 3/2}, and {sup 4}F{sub 9/2} to {sup 4}I{sub 15/2}, respectively. The emission color of the samples could be changed with moderating the doping concentrations. The dependence of UC intensity on pumping power indicated a two-photonmore » emission process. Studies on dielectric properties indicated that the introduction of Er increased the ferroelectric-paraelectric phase transition temperature (Tc) of SBT, thus making this ceramic suitable for piezoelectric sensor applications at higher temperatures. Piezoelectric measurement showed that the doped SBT had a relative higher piezoelectric constant d{sub 33} compared with the non-doped ceramics. The thermal annealing behaviors of the doped sample revealed a stable piezoelectric property. The doped SBT showed bright UC emission while simultaneously having increased Tc and d{sub 33}. As a multifunctional material, Er doped SBT ferroelectric oxide showed great potential in application of sensor, future optical-electro integration and coupling devices.« less
  • Monophase intergrowth Bi{sub 3}TiNbO{sub 9}-Bi{sub 4}Ti{sub 3}O{sub 12} (BTN-BIT) ceramics were synthesized by solid-state reaction method. In the temperature dependence of dielectric permittivity, two anomalies appeared at 945 and 1114 K, respectively. The ferroelectric hysteresis loop measurement revealed that the 2P{sub r} is 20 {mu}C/cm{sup 2}, nearly as twice as that of the BTN ceramic. The crystal structure analysis indicated that the enhanced octahedral distortion along the a axis is the main contribution to the ferroelectricity of BTN-BIT. The increased 2P{sub r} for the BTN-BIT ceramics is ascribed to its larger P{sub s} than that of the BTN and easiermore » domain switching under electric field than that of the BIT.« less
  • Intergrowth BaBi{sub 2}Nb{sub 2}O{sub 9}-Bi{sub 4}Ti{sub 3}O{sub 12} (BaBi{sub 6}Ti{sub 3}Nb{sub 2}O{sub 21}) Aurivillius phase ceramic has been found to be a relaxor ferroelectric (RFE) with the highest reported temperature of the maximum of the dielectric permittivity (T{sub m}) of all of the known RFE systems. Dielectric characterization revealed that it has two dielectric anomalies. The first one is a frequency independent broad dielectric constant peak at {approx}280 deg. C, while the second anomaly shows relaxor behavior at 636 deg. C (100 kHz). There is obvious frequency dispersion of dielectric response at room temperature, which is in agreement with dielectricmore » properties of a typical relaxor. Ferroelectric hysteresis loops and a measurable value of piezoelectric constant d{sub 33} confirmed the ferroelectric nature of BaBi{sub 6}Ti{sub 3}Nb{sub 2}O{sub 21} ceramics. The piezoelectric response remained even after annealing at temperatures above 636 deg. C.« less
  • Polycrystalline ceramic samples of Bi{sub 4}Ti{sub 3}O{sub 12} and the La-doped Bi{sub 3.5}La{sub 0.5}Ti{sub 3}O{sub 12} have been synthesized by standard high temperature solid state reaction method using high purity oxides and carbonates. The effect of lanthanum doping on the structure of Bi{sub 4}Ti{sub 3}O{sub 12} powders was investigated by X-ray diffraction. A better agreement between the observed and calculated X-Ray diffraction pattern was obtained by performing the Rietveld refinement with a structural model using the non centrosymmetric space group Fmmm. Rietveld analysis revealed that with the partial substitution of La on the Bi site increases the a and bmore » lattice parameters and decreases the c parameter. The activation energies calculated from dc conductivities are 1.033 eV and 2.244 eV which shows that La doping increases the resistivity of the material useful for dielectric devices.« less