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Title: Photoelectrochemical reaction and H{sub 2} generation at zero bias optimized by carrier concentration of n-type GaN

Abstract

The authors studied the photoelectrochemical properties dependent on carrier concentration of n-type GaN. The photocurrent at zero bias became the maximum value at the carrier concentration of 1.7x10{sup 17} cm{sup -3}. Using the sample optimized carrier concentration, the authors achieved H{sub 2} gas generation at a Pt counterelectrode without extra bias for the first time. The authors also discussed the mechanism of the dependence of photocurrent on the carrier concentration of GaN.

Authors:
; ; ; ; ; ;  [1];  [2];  [2];  [2];  [2];  [2];  [2]
  1. Department of Applied Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjyuku, Tokyo 162-8601 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
20991216
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Chemical Physics; Journal Volume: 126; Journal Issue: 5; Other Information: DOI: 10.1063/1.2432116; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; CARRIER DENSITY; ELECTROCHEMISTRY; ELECTROLYTES; GALLIUM NITRIDES; HYDROGEN; PHOTOCHEMISTRY; PHOTOCONDUCTIVITY; PHOTOEMISSION; PLATINUM; SEMICONDUCTOR MATERIALS

Citation Formats

Ono, Masato, Fujii, Katsushi, Ito, Takashi, Iwaki, Yasuhiro, Hirako, Akira, Yao, Takafumi, Ohkawa, Kazuhiro, Nakamura Inhomogeneous Crystal Project, Exploratory Research for Advanced Technology, Japan Science and Technology Agency, Tokyo University of Science, 1-3 Kagurazaka, Shinjyuku, Tokyo 162-8601, Center for Interdisciplinary Research, Tohoku University, Aramaki aza Aoba 6-3, Aoba-ku, Sendai 980-8578, Department of Applied Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjyuku, Tokyo 162-8601, Nakamura Inhomogeneous Crystal Project, Exploratory Research for Advanced Technology, Japan Science and Technology Agency, Tokyo University of Science, 1-3 Kagurazaka, Shinjyuku, Tokyo 162-8601, Center for Interdisciplinary Research, Tohoku University, Aramaki aza Aoba 6-3, Aoba-ku, Sendai 980-8578, Japan and Institute of Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, and Department of Applied Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjyuku, Tokyo 162-8601, Japan and Nakamura Inhomogeneous Crystal Project, Exploratory Research for Advanced Technology, Japan Science and Technology Agency, Tokyo University of Science, 1-3 Kagurazaka, Shinjyuku, Tokyo 162-8601. Photoelectrochemical reaction and H{sub 2} generation at zero bias optimized by carrier concentration of n-type GaN. United States: N. p., 2007. Web. doi:10.1063/1.2432116.
Ono, Masato, Fujii, Katsushi, Ito, Takashi, Iwaki, Yasuhiro, Hirako, Akira, Yao, Takafumi, Ohkawa, Kazuhiro, Nakamura Inhomogeneous Crystal Project, Exploratory Research for Advanced Technology, Japan Science and Technology Agency, Tokyo University of Science, 1-3 Kagurazaka, Shinjyuku, Tokyo 162-8601, Center for Interdisciplinary Research, Tohoku University, Aramaki aza Aoba 6-3, Aoba-ku, Sendai 980-8578, Department of Applied Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjyuku, Tokyo 162-8601, Nakamura Inhomogeneous Crystal Project, Exploratory Research for Advanced Technology, Japan Science and Technology Agency, Tokyo University of Science, 1-3 Kagurazaka, Shinjyuku, Tokyo 162-8601, Center for Interdisciplinary Research, Tohoku University, Aramaki aza Aoba 6-3, Aoba-ku, Sendai 980-8578, Japan and Institute of Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, & Department of Applied Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjyuku, Tokyo 162-8601, Japan and Nakamura Inhomogeneous Crystal Project, Exploratory Research for Advanced Technology, Japan Science and Technology Agency, Tokyo University of Science, 1-3 Kagurazaka, Shinjyuku, Tokyo 162-8601. Photoelectrochemical reaction and H{sub 2} generation at zero bias optimized by carrier concentration of n-type GaN. United States. doi:10.1063/1.2432116.
Ono, Masato, Fujii, Katsushi, Ito, Takashi, Iwaki, Yasuhiro, Hirako, Akira, Yao, Takafumi, Ohkawa, Kazuhiro, Nakamura Inhomogeneous Crystal Project, Exploratory Research for Advanced Technology, Japan Science and Technology Agency, Tokyo University of Science, 1-3 Kagurazaka, Shinjyuku, Tokyo 162-8601, Center for Interdisciplinary Research, Tohoku University, Aramaki aza Aoba 6-3, Aoba-ku, Sendai 980-8578, Department of Applied Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjyuku, Tokyo 162-8601, Nakamura Inhomogeneous Crystal Project, Exploratory Research for Advanced Technology, Japan Science and Technology Agency, Tokyo University of Science, 1-3 Kagurazaka, Shinjyuku, Tokyo 162-8601, Center for Interdisciplinary Research, Tohoku University, Aramaki aza Aoba 6-3, Aoba-ku, Sendai 980-8578, Japan and Institute of Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, and Department of Applied Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjyuku, Tokyo 162-8601, Japan and Nakamura Inhomogeneous Crystal Project, Exploratory Research for Advanced Technology, Japan Science and Technology Agency, Tokyo University of Science, 1-3 Kagurazaka, Shinjyuku, Tokyo 162-8601. Wed . "Photoelectrochemical reaction and H{sub 2} generation at zero bias optimized by carrier concentration of n-type GaN". United States. doi:10.1063/1.2432116.
@article{osti_20991216,
title = {Photoelectrochemical reaction and H{sub 2} generation at zero bias optimized by carrier concentration of n-type GaN},
author = {Ono, Masato and Fujii, Katsushi and Ito, Takashi and Iwaki, Yasuhiro and Hirako, Akira and Yao, Takafumi and Ohkawa, Kazuhiro and Nakamura Inhomogeneous Crystal Project, Exploratory Research for Advanced Technology, Japan Science and Technology Agency, Tokyo University of Science, 1-3 Kagurazaka, Shinjyuku, Tokyo 162-8601 and Center for Interdisciplinary Research, Tohoku University, Aramaki aza Aoba 6-3, Aoba-ku, Sendai 980-8578 and Department of Applied Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjyuku, Tokyo 162-8601 and Nakamura Inhomogeneous Crystal Project, Exploratory Research for Advanced Technology, Japan Science and Technology Agency, Tokyo University of Science, 1-3 Kagurazaka, Shinjyuku, Tokyo 162-8601 and Center for Interdisciplinary Research, Tohoku University, Aramaki aza Aoba 6-3, Aoba-ku, Sendai 980-8578, Japan and Institute of Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 and Department of Applied Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjyuku, Tokyo 162-8601, Japan and Nakamura Inhomogeneous Crystal Project, Exploratory Research for Advanced Technology, Japan Science and Technology Agency, Tokyo University of Science, 1-3 Kagurazaka, Shinjyuku, Tokyo 162-8601},
abstractNote = {The authors studied the photoelectrochemical properties dependent on carrier concentration of n-type GaN. The photocurrent at zero bias became the maximum value at the carrier concentration of 1.7x10{sup 17} cm{sup -3}. Using the sample optimized carrier concentration, the authors achieved H{sub 2} gas generation at a Pt counterelectrode without extra bias for the first time. The authors also discussed the mechanism of the dependence of photocurrent on the carrier concentration of GaN.},
doi = {10.1063/1.2432116},
journal = {Journal of Chemical Physics},
number = 5,
volume = 126,
place = {United States},
year = {Wed Feb 07 00:00:00 EST 2007},
month = {Wed Feb 07 00:00:00 EST 2007}
}