skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: X-ray pole figure analysis on columnar-structured microcrystalline silicon: Growth-induced crystallographic axial alignment in solid phase

Abstract

Angular distributions of crystallographic axes of the microcrystalline silicon ({mu}c-Si) thin films have been investigated using the x-ray pole figure measurements with an emphasis on the growth-induced changes in the first growth regions of the {mu}c-Si films. The (220) preferentially oriented {mu}c-Si films containing columnar microstructures were prepared by plasma enhanced chemical vapor deposition with differing thicknesses. The distributions in the tilt angles of <220> axes from the substrate normal decreased with increasing the film thickness, particularly in the first 0.5 {mu}m growth regions. Meanwhile, such a change was not found in <111> axes. Moreover, the x-ray pole figure measurements were also carried out for the (111) preferentially oriented {mu}c-Si films containing granular microstructures, revealing that no pronounced change in the tilt angles of <111> axes were found during the film growth. Therefore, the axial alignment should be specific to the <220> axes in the {mu}c-Si films with the (220) preferential orientation. In conjunction with the other experimental results on the microstructures, the growth-induced structural changes in solid phase are discussed.

Authors:
; ; ; ; ; ; ;  [1];  [2]
  1. Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
20982893
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 101; Journal Issue: 10; Other Information: DOI: 10.1063/1.2738403; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANGULAR DISTRIBUTION; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; CRYSTAL STRUCTURE; CRYSTALLOGRAPHY; GRAIN ORIENTATION; MICROSTRUCTURE; PLASMA; SEMICONDUCTOR MATERIALS; SILICON; SUBSTRATES; TEXTURE; THICKNESS; THIN FILMS

Citation Formats

Sobajima, Yasushi, Nakano, Shinya, Toyama, Toshihiko, Okamoto, Hiroaki, Omae, Satoshi, Minemoto, Takashi, Takakura, Hideyuki, Hamakawa, Yoshihiro, and Faculty of Science and Engineering, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577. X-ray pole figure analysis on columnar-structured microcrystalline silicon: Growth-induced crystallographic axial alignment in solid phase. United States: N. p., 2007. Web. doi:10.1063/1.2738403.
Sobajima, Yasushi, Nakano, Shinya, Toyama, Toshihiko, Okamoto, Hiroaki, Omae, Satoshi, Minemoto, Takashi, Takakura, Hideyuki, Hamakawa, Yoshihiro, & Faculty of Science and Engineering, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577. X-ray pole figure analysis on columnar-structured microcrystalline silicon: Growth-induced crystallographic axial alignment in solid phase. United States. doi:10.1063/1.2738403.
Sobajima, Yasushi, Nakano, Shinya, Toyama, Toshihiko, Okamoto, Hiroaki, Omae, Satoshi, Minemoto, Takashi, Takakura, Hideyuki, Hamakawa, Yoshihiro, and Faculty of Science and Engineering, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577. Tue . "X-ray pole figure analysis on columnar-structured microcrystalline silicon: Growth-induced crystallographic axial alignment in solid phase". United States. doi:10.1063/1.2738403.
@article{osti_20982893,
title = {X-ray pole figure analysis on columnar-structured microcrystalline silicon: Growth-induced crystallographic axial alignment in solid phase},
author = {Sobajima, Yasushi and Nakano, Shinya and Toyama, Toshihiko and Okamoto, Hiroaki and Omae, Satoshi and Minemoto, Takashi and Takakura, Hideyuki and Hamakawa, Yoshihiro and Faculty of Science and Engineering, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577},
abstractNote = {Angular distributions of crystallographic axes of the microcrystalline silicon ({mu}c-Si) thin films have been investigated using the x-ray pole figure measurements with an emphasis on the growth-induced changes in the first growth regions of the {mu}c-Si films. The (220) preferentially oriented {mu}c-Si films containing columnar microstructures were prepared by plasma enhanced chemical vapor deposition with differing thicknesses. The distributions in the tilt angles of <220> axes from the substrate normal decreased with increasing the film thickness, particularly in the first 0.5 {mu}m growth regions. Meanwhile, such a change was not found in <111> axes. Moreover, the x-ray pole figure measurements were also carried out for the (111) preferentially oriented {mu}c-Si films containing granular microstructures, revealing that no pronounced change in the tilt angles of <111> axes were found during the film growth. Therefore, the axial alignment should be specific to the <220> axes in the {mu}c-Si films with the (220) preferential orientation. In conjunction with the other experimental results on the microstructures, the growth-induced structural changes in solid phase are discussed.},
doi = {10.1063/1.2738403},
journal = {Journal of Applied Physics},
number = 10,
volume = 101,
place = {United States},
year = {Tue May 15 00:00:00 EDT 2007},
month = {Tue May 15 00:00:00 EDT 2007}
}