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Title: Strain profile of (001) silicon implanted with nitrogen by plasma immersion

Abstract

In this work, we investigate the strain and defect state of silicon implanted with nitrogen by plasma immersion ion implantation, with doses between 4.5x10{sup 16} and 8.7x10{sup 16} cm{sup -2}. For this purpose, we have used Auger electron spectroscopy, x-ray reflectivity, and high-resolution x-ray diffraction. Auger spectra showed that nitrogen concentration profiles broaden and shift deeper into the substrate as the dose increases. High oxygen concentration in the first 20 nm suggested the presence of an amorphous oxide layer at the sample surface, which was confirmed by x-ray reflectivity measurements. Reciprocal space maps revealed a tensile strain perpendicular to the surface, while no in-plane strain was detected. Since no significant diffuse scattering was found, randomly distributed point defects must be predominant in the strained region compared to large displacement field defects such as clusters and dislocations. {omega}/2{theta} scans around (004) Bragg reflection were fitted using dynamical theory of x-ray diffraction. The strain profiles obtained from the best fits correlated well with nitrogen concentration depth profiles, signaling interstitial nitrogen as the main source of strain.

Authors:
; ; ; ;  [1];  [2];  [3]
  1. Laboratorio Associado de Sensores e Materiais-LAS, Instituto Nacional de Pesquisas Espaciais-INPE, CP 515, 12245-970 Sao Jose dos Campos, Sao Paulo (Brazil)
  2. (Brazil)
  3. (Germany)
Publication Date:
OSTI Identifier:
20982890
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 101; Journal Issue: 10; Other Information: DOI: 10.1063/1.2734957; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AUGER ELECTRON SPECTROSCOPY; BRAGG REFLECTION; DIFFUSE SCATTERING; DISLOCATIONS; INTERSTITIALS; ION IMPLANTATION; LAYERS; NITROGEN; OXIDES; OXYGEN; PLASMA; REFLECTIVITY; SEMICONDUCTOR MATERIALS; SILICON; STRAINS; SUBSTRATES; X-RAY DIFFRACTION

Citation Formats

Diaz, B., Abramof, E., Castro, R. M., Ueda, M., Reuther, H., Laboratorio Associado de Plasma, Instituto Nacional de Pesquisas Espaciais-INPE, CP 515, 12245-970 Sao Jose dos Campos, Sao Paulo, and Research Center Rossendorf, Institute of Ion Beam Physics and Materials Research, D-01314 Dresden. Strain profile of (001) silicon implanted with nitrogen by plasma immersion. United States: N. p., 2007. Web. doi:10.1063/1.2734957.
Diaz, B., Abramof, E., Castro, R. M., Ueda, M., Reuther, H., Laboratorio Associado de Plasma, Instituto Nacional de Pesquisas Espaciais-INPE, CP 515, 12245-970 Sao Jose dos Campos, Sao Paulo, & Research Center Rossendorf, Institute of Ion Beam Physics and Materials Research, D-01314 Dresden. Strain profile of (001) silicon implanted with nitrogen by plasma immersion. United States. doi:10.1063/1.2734957.
Diaz, B., Abramof, E., Castro, R. M., Ueda, M., Reuther, H., Laboratorio Associado de Plasma, Instituto Nacional de Pesquisas Espaciais-INPE, CP 515, 12245-970 Sao Jose dos Campos, Sao Paulo, and Research Center Rossendorf, Institute of Ion Beam Physics and Materials Research, D-01314 Dresden. Tue . "Strain profile of (001) silicon implanted with nitrogen by plasma immersion". United States. doi:10.1063/1.2734957.
@article{osti_20982890,
title = {Strain profile of (001) silicon implanted with nitrogen by plasma immersion},
author = {Diaz, B. and Abramof, E. and Castro, R. M. and Ueda, M. and Reuther, H. and Laboratorio Associado de Plasma, Instituto Nacional de Pesquisas Espaciais-INPE, CP 515, 12245-970 Sao Jose dos Campos, Sao Paulo and Research Center Rossendorf, Institute of Ion Beam Physics and Materials Research, D-01314 Dresden},
abstractNote = {In this work, we investigate the strain and defect state of silicon implanted with nitrogen by plasma immersion ion implantation, with doses between 4.5x10{sup 16} and 8.7x10{sup 16} cm{sup -2}. For this purpose, we have used Auger electron spectroscopy, x-ray reflectivity, and high-resolution x-ray diffraction. Auger spectra showed that nitrogen concentration profiles broaden and shift deeper into the substrate as the dose increases. High oxygen concentration in the first 20 nm suggested the presence of an amorphous oxide layer at the sample surface, which was confirmed by x-ray reflectivity measurements. Reciprocal space maps revealed a tensile strain perpendicular to the surface, while no in-plane strain was detected. Since no significant diffuse scattering was found, randomly distributed point defects must be predominant in the strained region compared to large displacement field defects such as clusters and dislocations. {omega}/2{theta} scans around (004) Bragg reflection were fitted using dynamical theory of x-ray diffraction. The strain profiles obtained from the best fits correlated well with nitrogen concentration depth profiles, signaling interstitial nitrogen as the main source of strain.},
doi = {10.1063/1.2734957},
journal = {Journal of Applied Physics},
number = 10,
volume = 101,
place = {United States},
year = {Tue May 15 00:00:00 EDT 2007},
month = {Tue May 15 00:00:00 EDT 2007}
}