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Title: Stress field induced by swift heavy ion irradiation in cubic yttria stabilized zirconia

Abstract

X-ray diffraction (XRD) was used to investigate the damage and the correlated stress induced by the slowing down of swift heavy ions in cubic zirconia polycrystals doped with 10 mol % Y{sub 2}O{sub 3}. Samples were irradiated at room temperature with 940 MeV Pb ions at fluences ranging from 5x10{sup 11} to 4x10{sup 13} cm{sup -2}. Changes of XRD profiles were examined at increasing fluences. Residual macroscopic stresses induced by irradiation were determined using XRD by the sin{sup 2} {psi} method. The state of stress in the irradiated layer was described by a combination of: (i) a hydrostatic stress caused by the formation of damaged tracks leading to swelling and (ii) a biaxial stress imposed by the bulk undamaged material, which controls the lateral expansion of the surface damaged layer. The evolution of the stress as a function of irradiation fluence was also determined: the intensity of the hydrostatic stress increases from 80 to 460 MPa when the fluence is increased from 5x10{sup 11} to 4x10{sup 13} cm{sup -2} and that of the biaxial stress increases correlatively from -80 to -1630 MPa.

Authors:
; ; ; ;  [1];  [2]
  1. Universite Paris Sud, LEMHE/ICMMO, UMR 8182, Batiment 410, 91405 Orsay (France)
  2. (France)
Publication Date:
OSTI Identifier:
20982887
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 101; Journal Issue: 10; Other Information: DOI: 10.1063/1.2733745; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DOPED MATERIALS; HEAVY IONS; ION BEAMS; IRRADIATION; LAYERS; LEAD IONS; MEV RANGE 100-1000; PARTICLE TRACKS; POLYCRYSTALS; PRESSURE DEPENDENCE; PRESSURE RANGE MEGA PA 10-100; PRESSURE RANGE MEGA PA 100-1000; RESIDUAL STRESSES; SLOWING-DOWN; SWELLING; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; X-RAY DIFFRACTION; YTTRIUM OXIDES; ZIRCONIUM OXIDES

Citation Formats

Sattonnay, G., Lahrichi, M., Herbst-Ghysel, M., Garrido, F., Thome, L., and Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse, CNRS-IN2P3-Universite Paris Sud, Batiment 108, 91405 Orsay. Stress field induced by swift heavy ion irradiation in cubic yttria stabilized zirconia. United States: N. p., 2007. Web. doi:10.1063/1.2733745.
Sattonnay, G., Lahrichi, M., Herbst-Ghysel, M., Garrido, F., Thome, L., & Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse, CNRS-IN2P3-Universite Paris Sud, Batiment 108, 91405 Orsay. Stress field induced by swift heavy ion irradiation in cubic yttria stabilized zirconia. United States. doi:10.1063/1.2733745.
Sattonnay, G., Lahrichi, M., Herbst-Ghysel, M., Garrido, F., Thome, L., and Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse, CNRS-IN2P3-Universite Paris Sud, Batiment 108, 91405 Orsay. Tue . "Stress field induced by swift heavy ion irradiation in cubic yttria stabilized zirconia". United States. doi:10.1063/1.2733745.
@article{osti_20982887,
title = {Stress field induced by swift heavy ion irradiation in cubic yttria stabilized zirconia},
author = {Sattonnay, G. and Lahrichi, M. and Herbst-Ghysel, M. and Garrido, F. and Thome, L. and Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse, CNRS-IN2P3-Universite Paris Sud, Batiment 108, 91405 Orsay},
abstractNote = {X-ray diffraction (XRD) was used to investigate the damage and the correlated stress induced by the slowing down of swift heavy ions in cubic zirconia polycrystals doped with 10 mol % Y{sub 2}O{sub 3}. Samples were irradiated at room temperature with 940 MeV Pb ions at fluences ranging from 5x10{sup 11} to 4x10{sup 13} cm{sup -2}. Changes of XRD profiles were examined at increasing fluences. Residual macroscopic stresses induced by irradiation were determined using XRD by the sin{sup 2} {psi} method. The state of stress in the irradiated layer was described by a combination of: (i) a hydrostatic stress caused by the formation of damaged tracks leading to swelling and (ii) a biaxial stress imposed by the bulk undamaged material, which controls the lateral expansion of the surface damaged layer. The evolution of the stress as a function of irradiation fluence was also determined: the intensity of the hydrostatic stress increases from 80 to 460 MPa when the fluence is increased from 5x10{sup 11} to 4x10{sup 13} cm{sup -2} and that of the biaxial stress increases correlatively from -80 to -1630 MPa.},
doi = {10.1063/1.2733745},
journal = {Journal of Applied Physics},
number = 10,
volume = 101,
place = {United States},
year = {Tue May 15 00:00:00 EDT 2007},
month = {Tue May 15 00:00:00 EDT 2007}
}
  • Yttria-stabilized zirconia single crystals were irradiated with a variety of different swift heavy ions (from 145 MeV C to 2.6 GeV U) in a broad fluence range (between 10{sup 11} and 10{sup 15} cm{sup -2}). Surface profilometry measurements show that the out-of-plane expansion of the samples increases versus ion fluence up to an asymptotic value of about 0.2%; the larger the ion mass, the smaller the fluence needed to reach saturation. Rutherford backscattering spectrometry data on irradiated crystals under channeling conditions give clear evidence of lattice damage creation for ions heavier than Br corresponding to a threshold electronic stopping powermore » about 20 keV nm{sup -1}. In contrast, no threshold is found for the swelling data which scale fairly well with the number of displacements per atom (except for the irradiation with U ions). In all cases we find a linear increase of the out-of-plane expansion versus the concentration of F{sup +}-type centers (singly ionized oxygen vacancies) measured by electron paramagnetic resonance spectroscopy in as-received and thermochemically reduced samples, regardless of crystal orientation. The nature of the lattice disorder and the respective effects of elastic collisions and electronic excitations on the ion-induced volume expansion and damage are discussed.« less
  • The lattice damage was investigated by x-ray diffraction techniques in yttria-stabilized zirconia single crystals with the (100) or (110) orientation upon irradiation with swift heavy ions (from 100-MeV C to 2.6-GeV U) in a broad electronic stopping power range (from about 0.3 to 48 keV nm{sup -1}). The {theta}-2{theta} scans show that no amorphization or change to a new crystalline phase occurs regardless of the ion and crystal features. However, the rocking curves ({omega} scans) and reciprocal space mappings show evidence of the mosaicity of the crystals, which is produced above a threshold electronic stopping power between 18 and 27more » keV nm{sup -1}. This threshold is in agreement with our previous Rutherford backscattering spectroscopy/channeling spectroscopy data. Two kinds of damage phenomena are found: (i) nuclear-collision induced clusters of point defects which generate Bragg peak shifts and broadening in the 2{theta}-{omega} and {theta}-2{theta} scans, and (ii) electronic-excitation induced lattice damage yielding broad peaks in the {omega} scans above the stopping power threshold at high fluences.« less
  • The crack systems associated with room-temperature Vickers indentations on (001) surfaces in 9.4-mol%-Y{sub 2}O{sub 3}-stabilized cubic ZrO{sub 2} single crystals are examined. The indentation-induced radial cracks are not always perpendicular to the free surface, as is usually assumed, and the surface traces are therefore not a reliable guide to the nature of the cracking. In fact, indentations with (100) diagonals do not form cracks on (010), but form secondary radial cracks on inclined planes and noncoplanar median cracks on 110 or 1{bar 1}0.
  • The study presents an investigation of damage evolution of yttria-stabilized zirconia (YSZ) induced by irradiation of 100 keV He ions at room temperature as a function of fluence. Transmission electron microscopy (TEM), X-ray diffraction (XRD) and atomic force microscopy (AFM) were used in order to study the nature and evolution of structural damage at different levels. Our study shows that various kinds of defects are formed with the increasing fluence. Firstly, at low fluences, from 1 1016 to 4 1016 cm 2, of which maximum values of displacement per atom (dpa) range from 0.29 to 1.17, an elastic strain whichmore » is attributed to the accumulation of irradiation-induced discrete point defects, is presented. Secondly, in the intermediate fluences ranging from 8 1016 to 1 1017 cm 2 with corresponding dpa varying from 2.33 to 2.91, a large drop of elastic strain occurs accompanied by presence of an intensive damage region, which is comprised by large and interacted defect clusters. Thirdly, at the two high fluences of 2 1017 and 4 1017 cm 2, of which dpa are 5.83 and 11.65 respectively, a great amount of ribbon-like He bubbles with granular structure and cracks are presented at the depth of maximum concentration of deposited He atoms. The structural damage evolution and the mechanism of formation of He bubbles are discussed.« less
  • Yttria fully stabilized zirconia (FSZ) is a candidate material for nuclear inert matrix fuel cell and nuclear waste containment due to its isostructure with UO{sub 2} and PuO{sub 2} and its outstanding radiation resistance. Amorphous and polycrystalline cubic FSZ thin films of thickness around 400 nm were deposited on (100) Si by ultraviolet pulsed laser ablation and irradiated with 2.6 GeV uranium ions at fluences between 2x10{sup 11} and 1.2x10{sup 12} ions cm{sup -2}. The films were characterized before and after irradiation using scanning electron microscopy, atomic force microscopy, grazing incidence x-ray diffraction, and x-ray photoelectron spectroscopy (XPS). Amorphization, followedmore » by partial recrystallization, is observed for irradiated crystalline films, whereas the amorphous films remain unaltered. A shift in the relative position of the XPS Zr 3d, Y 3d, and O 1s core lines is observed upon irradiation both in the crystalline and amorphous films, indicating differences in the local chemical environment at the surface as well as in near-surface layers. Such changes are ascribed to oxygen migration at the film surface, which may promote the recrystallization of as-deposited crystalline films but does not affect amorphous films.« less