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Title: Interface roughening and defect nucleation during solid phase epitaxy regrowth of doped and intrinsic Si{sub 0.83}Ge{sub 0.17} alloys

Abstract

Metastable pseudomorphic Si{sub 0.83}Ge{sub 0.17} with thickness of 135 nm was deposited on (001) Si substrate by molecular beam epitaxy and amorphized to a depth of {approx}360 nm, using 3x10{sup 15} cm{sup -2} Ge ions at 270 keV. Samples were regrown by solid phase epitaxy in the 500-600 degree sign C temperature range. The regrowth rate was measured in situ by time resolved reflectivity, while the structure of the epilayers was investigated by transmission electron microscopy. Three regions can be distinguished in SiGe after solid phase epitaxy, independent of the annealing temperature: (1) a 20 nm defect-free layer close to the original crystal-amorphous interface, (2) a middle region with a high density of planar defects, and (3) a layer with dislocations and stacking faults extending up to the surface. The activation energy of the SiGe solid phase epitaxy is equal to the activation energy of Si except in the middle region. The amorphous-crystal interface evolution was studied by transmission electron microscopy of partially regrown samples. In order to study the effects of dopants, some samples were also implanted with B{sup +} and Sb{sup +} ions. At the ion projected range (125 nm for both implants) the regrowth rate increases bymore » a factor of 3 with respect to the unimplanted SiGe, but the defect-free layer again is found to be about 20 nm in all cases. Moreover, the activation energy of the solid phase epitaxy regrowth process does not depend on dopant introduction, while the only observable effect of B or Sb incorporation is a smoothness of the amorphous-crystal interface during solid phase epitaxy.« less

Authors:
; ; ; ; ;  [1];  [2]
  1. MATIS CNR-INFM and Dipartimento di Fisica e Astronomia, Universita di Catania, Via S. Sofia 64, 95123 Catania (Italy)
  2. (Italy)
Publication Date:
OSTI Identifier:
20982885
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 101; Journal Issue: 10; Other Information: DOI: 10.1063/1.2732680; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ACTIVATION ENERGY; ANNEALING; ANTIMONY IONS; BINARY ALLOY SYSTEMS; BORON IONS; CRYSTAL GROWTH; DISLOCATIONS; DOPED MATERIALS; GERMANIUM ALLOYS; GERMANIUM IONS; GERMANIUM SILICIDES; MOLECULAR BEAM EPITAXY; NUCLEATION; SEMICONDUCTOR MATERIALS; SILICON ALLOYS; STACKING FAULTS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

D'Angelo, D., Piro, A. M., Terrasi, A., Grimaldi, M. G., Mirabella, S., Bongiorno, C., and CNR-IMM, Sezione di Catania, Stradale Primosole 50, 95121 Catania. Interface roughening and defect nucleation during solid phase epitaxy regrowth of doped and intrinsic Si{sub 0.83}Ge{sub 0.17} alloys. United States: N. p., 2007. Web. doi:10.1063/1.2732680.
D'Angelo, D., Piro, A. M., Terrasi, A., Grimaldi, M. G., Mirabella, S., Bongiorno, C., & CNR-IMM, Sezione di Catania, Stradale Primosole 50, 95121 Catania. Interface roughening and defect nucleation during solid phase epitaxy regrowth of doped and intrinsic Si{sub 0.83}Ge{sub 0.17} alloys. United States. doi:10.1063/1.2732680.
D'Angelo, D., Piro, A. M., Terrasi, A., Grimaldi, M. G., Mirabella, S., Bongiorno, C., and CNR-IMM, Sezione di Catania, Stradale Primosole 50, 95121 Catania. Tue . "Interface roughening and defect nucleation during solid phase epitaxy regrowth of doped and intrinsic Si{sub 0.83}Ge{sub 0.17} alloys". United States. doi:10.1063/1.2732680.
@article{osti_20982885,
title = {Interface roughening and defect nucleation during solid phase epitaxy regrowth of doped and intrinsic Si{sub 0.83}Ge{sub 0.17} alloys},
author = {D'Angelo, D. and Piro, A. M. and Terrasi, A. and Grimaldi, M. G. and Mirabella, S. and Bongiorno, C. and CNR-IMM, Sezione di Catania, Stradale Primosole 50, 95121 Catania},
abstractNote = {Metastable pseudomorphic Si{sub 0.83}Ge{sub 0.17} with thickness of 135 nm was deposited on (001) Si substrate by molecular beam epitaxy and amorphized to a depth of {approx}360 nm, using 3x10{sup 15} cm{sup -2} Ge ions at 270 keV. Samples were regrown by solid phase epitaxy in the 500-600 degree sign C temperature range. The regrowth rate was measured in situ by time resolved reflectivity, while the structure of the epilayers was investigated by transmission electron microscopy. Three regions can be distinguished in SiGe after solid phase epitaxy, independent of the annealing temperature: (1) a 20 nm defect-free layer close to the original crystal-amorphous interface, (2) a middle region with a high density of planar defects, and (3) a layer with dislocations and stacking faults extending up to the surface. The activation energy of the SiGe solid phase epitaxy is equal to the activation energy of Si except in the middle region. The amorphous-crystal interface evolution was studied by transmission electron microscopy of partially regrown samples. In order to study the effects of dopants, some samples were also implanted with B{sup +} and Sb{sup +} ions. At the ion projected range (125 nm for both implants) the regrowth rate increases by a factor of 3 with respect to the unimplanted SiGe, but the defect-free layer again is found to be about 20 nm in all cases. Moreover, the activation energy of the solid phase epitaxy regrowth process does not depend on dopant introduction, while the only observable effect of B or Sb incorporation is a smoothness of the amorphous-crystal interface during solid phase epitaxy.},
doi = {10.1063/1.2732680},
journal = {Journal of Applied Physics},
number = 10,
volume = 101,
place = {United States},
year = {Tue May 15 00:00:00 EDT 2007},
month = {Tue May 15 00:00:00 EDT 2007}
}