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Title: Isotope effects between hydrogen and deuterium microwave plasmas on chemical vapor deposition homoepitaxial diamond growth

Abstract

This article shows that replacing hydrogen with deuterium improves the quality of microwave plasma-assisted chemical vapor deposition homoepitaxial diamond. Suppression of point defects in the bulk and of nonepitaxial crystallites and increasing of free-exciton emission intensity were revealed by electron paramagnetic resonance, optical microscopy, and cathodoluminescence, respectively. The isotope effects on the etching rate of diamond by deuterium are also revealed. The isotope effects are discussed from the viewpoint of etching effects.

Authors:
; ; ; ; ; ; ; ;  [1];  [2];  [2];  [2];  [2];  [2]
  1. Diamond Research Center, AIST, Tsukuba Central 2, Tsukuba, 305-8568 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
20982882
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 101; Journal Issue: 10; Other Information: DOI: 10.1063/1.2727380; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CATHODOLUMINESCENCE; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; DEUTERIUM; DIAMONDS; ELECTRON SPIN RESONANCE; EPITAXY; ETCHING; EXCITONS; HYDROGEN; ISOTOPE EFFECTS; LAYERS; MICROWAVE RADIATION; OPTICAL MICROSCOPY; PARAMAGNETISM; PLASMA; POINT DEFECTS; SEMICONDUCTOR MATERIALS

Citation Formats

Mizuochi, N., Isoya, J., Niitsuma, J., Sekiguchi, T., Watanabe, H., Kato, H., Makino, T., Okushi, H., Yamasaki, S., Graduate School of Library, Information and Media Studies, University of Tsukuba, Tsukuba, 305-8550, CREST JST, Chiyoda Tokyo, 102-0081, National Institute for Materials Science, Tsukuba, 305-0044, Diamond Research Center, AIST, Tsukuba Central 2, Tsukuba, 305-8568, and CREST JST, Chiyoda Tokyo, 102-0081. Isotope effects between hydrogen and deuterium microwave plasmas on chemical vapor deposition homoepitaxial diamond growth. United States: N. p., 2007. Web. doi:10.1063/1.2727380.
Mizuochi, N., Isoya, J., Niitsuma, J., Sekiguchi, T., Watanabe, H., Kato, H., Makino, T., Okushi, H., Yamasaki, S., Graduate School of Library, Information and Media Studies, University of Tsukuba, Tsukuba, 305-8550, CREST JST, Chiyoda Tokyo, 102-0081, National Institute for Materials Science, Tsukuba, 305-0044, Diamond Research Center, AIST, Tsukuba Central 2, Tsukuba, 305-8568, & CREST JST, Chiyoda Tokyo, 102-0081. Isotope effects between hydrogen and deuterium microwave plasmas on chemical vapor deposition homoepitaxial diamond growth. United States. doi:10.1063/1.2727380.
Mizuochi, N., Isoya, J., Niitsuma, J., Sekiguchi, T., Watanabe, H., Kato, H., Makino, T., Okushi, H., Yamasaki, S., Graduate School of Library, Information and Media Studies, University of Tsukuba, Tsukuba, 305-8550, CREST JST, Chiyoda Tokyo, 102-0081, National Institute for Materials Science, Tsukuba, 305-0044, Diamond Research Center, AIST, Tsukuba Central 2, Tsukuba, 305-8568, and CREST JST, Chiyoda Tokyo, 102-0081. Tue . "Isotope effects between hydrogen and deuterium microwave plasmas on chemical vapor deposition homoepitaxial diamond growth". United States. doi:10.1063/1.2727380.
@article{osti_20982882,
title = {Isotope effects between hydrogen and deuterium microwave plasmas on chemical vapor deposition homoepitaxial diamond growth},
author = {Mizuochi, N. and Isoya, J. and Niitsuma, J. and Sekiguchi, T. and Watanabe, H. and Kato, H. and Makino, T. and Okushi, H. and Yamasaki, S. and Graduate School of Library, Information and Media Studies, University of Tsukuba, Tsukuba, 305-8550 and CREST JST, Chiyoda Tokyo, 102-0081 and National Institute for Materials Science, Tsukuba, 305-0044 and Diamond Research Center, AIST, Tsukuba Central 2, Tsukuba, 305-8568 and CREST JST, Chiyoda Tokyo, 102-0081},
abstractNote = {This article shows that replacing hydrogen with deuterium improves the quality of microwave plasma-assisted chemical vapor deposition homoepitaxial diamond. Suppression of point defects in the bulk and of nonepitaxial crystallites and increasing of free-exciton emission intensity were revealed by electron paramagnetic resonance, optical microscopy, and cathodoluminescence, respectively. The isotope effects on the etching rate of diamond by deuterium are also revealed. The isotope effects are discussed from the viewpoint of etching effects.},
doi = {10.1063/1.2727380},
journal = {Journal of Applied Physics},
number = 10,
volume = 101,
place = {United States},
year = {Tue May 15 00:00:00 EDT 2007},
month = {Tue May 15 00:00:00 EDT 2007}
}