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Title: Large tunneling magnetoresistance effect at high voltage drop for Co-based Heusler alloy/MgO/CoFe junctions

Abstract

Growth and magnetic characterization of thin films of Co{sub 2}Cr{sub 0.6}Fe{sub 0.4}Al and Co{sub 2}MnSi full-Heusler compounds are investigated. Thin films were deposited by magnetron sputtering at room temperature directly onto oxidized Si wafers. These Heusler films are magnetically very soft and ferromagnetic with Curie temperatures well above room temperature. Polycrystalline Co{sub 2}Cr{sub 0.6}Fe{sub 0.4}Al Heusler films combined with MgO barriers and CoFe counter electrodes are structured to magnetic tunnel junctions and yield almost 50% magnetoresistance at room temperature. The magnetoresistance shows a strong bias dependence with the maximum occurring at a voltage drop well above 1 V. This special feature is accompanied by only a moderate temperature dependence of the tunnel magnetoresistance.

Authors:
; ; ;  [1]
  1. Institute of Solid State Research, Electronic Properties (IFF-9) and cni-Center of Nanoelectronic Systems for Information Technology, Research Center Juelich GmbH, D-52425 Juelich (Germany)
Publication Date:
OSTI Identifier:
20982863
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 101; Journal Issue: 9; Conference: 10. joint MMM/INTERMAG conference, Baltimore, MD (United States), 7-11 Jan 2007; Other Information: DOI: 10.1063/1.2711070; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHROMIUM ALLOYS; COBALT ALLOYS; CRYSTAL GROWTH; CURIE POINT; DEPOSITION; ELECTRODES; HEUSLER ALLOYS; IRON ALLOYS; MAGNESIUM OXIDES; MAGNETORESISTANCE; POLYCRYSTALS; SILICON ALLOYS; SPUTTERING; SUPERCONDUCTING JUNCTIONS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; TUNNEL EFFECT; VOLTAGE DROP

Citation Formats

Rata, A. D., Braak, H., Buergler, D. E., and Schneider, C. M. Large tunneling magnetoresistance effect at high voltage drop for Co-based Heusler alloy/MgO/CoFe junctions. United States: N. p., 2007. Web. doi:10.1063/1.2711070.
Rata, A. D., Braak, H., Buergler, D. E., & Schneider, C. M. Large tunneling magnetoresistance effect at high voltage drop for Co-based Heusler alloy/MgO/CoFe junctions. United States. doi:10.1063/1.2711070.
Rata, A. D., Braak, H., Buergler, D. E., and Schneider, C. M. Tue . "Large tunneling magnetoresistance effect at high voltage drop for Co-based Heusler alloy/MgO/CoFe junctions". United States. doi:10.1063/1.2711070.
@article{osti_20982863,
title = {Large tunneling magnetoresistance effect at high voltage drop for Co-based Heusler alloy/MgO/CoFe junctions},
author = {Rata, A. D. and Braak, H. and Buergler, D. E. and Schneider, C. M.},
abstractNote = {Growth and magnetic characterization of thin films of Co{sub 2}Cr{sub 0.6}Fe{sub 0.4}Al and Co{sub 2}MnSi full-Heusler compounds are investigated. Thin films were deposited by magnetron sputtering at room temperature directly onto oxidized Si wafers. These Heusler films are magnetically very soft and ferromagnetic with Curie temperatures well above room temperature. Polycrystalline Co{sub 2}Cr{sub 0.6}Fe{sub 0.4}Al Heusler films combined with MgO barriers and CoFe counter electrodes are structured to magnetic tunnel junctions and yield almost 50% magnetoresistance at room temperature. The magnetoresistance shows a strong bias dependence with the maximum occurring at a voltage drop well above 1 V. This special feature is accompanied by only a moderate temperature dependence of the tunnel magnetoresistance.},
doi = {10.1063/1.2711070},
journal = {Journal of Applied Physics},
number = 9,
volume = 101,
place = {United States},
year = {Tue May 01 00:00:00 EDT 2007},
month = {Tue May 01 00:00:00 EDT 2007}
}