skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: The influence of electron irradiation on electron holography of focused ion beam milled GaAs p-n junctions

Abstract

Electron beam irradiation is shown to significantly influence phase images recorded from focused ion beam milled GaAs p-n junction specimens examined using off-axis electron holography in the transmission electron microscope. Our results show that the use of improved electrical connections to the specimen overcomes this problem, and may allow the correct built in potential across the junction to be recovered.

Authors:
; ; ;  [1]
  1. Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ (United Kingdom)
Publication Date:
OSTI Identifier:
20982851
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 101; Journal Issue: 9; Other Information: DOI: 10.1063/1.2730557; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRON BEAMS; ELECTRONS; GALLIUM ARSENIDES; HOLOGRAPHY; IMAGES; ION BEAMS; IRRADIATION; P-N JUNCTIONS; SEMICONDUCTOR MATERIALS; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Cooper, David, Twitchett-Harrison, Alison C., Midgley, Paul A., and Dunin-Borkowski, Rafal E.. The influence of electron irradiation on electron holography of focused ion beam milled GaAs p-n junctions. United States: N. p., 2007. Web. doi:10.1063/1.2730557.
Cooper, David, Twitchett-Harrison, Alison C., Midgley, Paul A., & Dunin-Borkowski, Rafal E.. The influence of electron irradiation on electron holography of focused ion beam milled GaAs p-n junctions. United States. doi:10.1063/1.2730557.
Cooper, David, Twitchett-Harrison, Alison C., Midgley, Paul A., and Dunin-Borkowski, Rafal E.. Tue . "The influence of electron irradiation on electron holography of focused ion beam milled GaAs p-n junctions". United States. doi:10.1063/1.2730557.
@article{osti_20982851,
title = {The influence of electron irradiation on electron holography of focused ion beam milled GaAs p-n junctions},
author = {Cooper, David and Twitchett-Harrison, Alison C. and Midgley, Paul A. and Dunin-Borkowski, Rafal E.},
abstractNote = {Electron beam irradiation is shown to significantly influence phase images recorded from focused ion beam milled GaAs p-n junction specimens examined using off-axis electron holography in the transmission electron microscope. Our results show that the use of improved electrical connections to the specimen overcomes this problem, and may allow the correct built in potential across the junction to be recovered.},
doi = {10.1063/1.2730557},
journal = {Journal of Applied Physics},
number = 9,
volume = 101,
place = {United States},
year = {Tue May 01 00:00:00 EDT 2007},
month = {Tue May 01 00:00:00 EDT 2007}
}