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Title: Effects of deep defect concentration on junction space charge capacitance measurements

Abstract

Expressions for the small signal capacitance and pulse bias-induced large signal capacitance transient of an abrupt n{sup +}-p junction in the presence of one or more deep traps of arbitrary concentrations are presented. The expressions show that a simple inverse relationship between the measured small signal capacitance and the junction's space charge depletion width is not expected. Unexpected effects on defect capture cross section and defect concentration determination, when applied to deep level transient spectroscopy simulations, are also reported. Experimental results of both temperature dependent capacitance and transient capacitance measurements performed on electron irradiated Si n{sup +}-p junctions are presented and analyzed in the context of these expressions. Modeling of the measured signals using these expressions is shown to be in good agreement with the experiment.

Authors:
; ;  [1];  [2];  [2]
  1. Air Force Research Laboratory SNHC, Hanscom AFB, Massachusetts 01731 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
20982850
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 101; Journal Issue: 9; Other Information: DOI: 10.1063/1.2719291; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 36 MATERIALS SCIENCE; CAPACITANCE; CROSS SECTIONS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON BEAMS; P-N JUNCTIONS; SEMICONDUCTOR MATERIALS; SIGNALS; SILICON; SIMULATION; SPACE CHARGE; TEMPERATURE DEPENDENCE

Citation Formats

Buchwald, Walter R., Morath, Christian P., Drevinsky, Peter J., Sandia National Laboratories, Albuquerque, New Mexico 87185, and Air Force Research Laboratory SNHC, Hanscom AFB, Massachusetts 01731. Effects of deep defect concentration on junction space charge capacitance measurements. United States: N. p., 2007. Web. doi:10.1063/1.2719291.
Buchwald, Walter R., Morath, Christian P., Drevinsky, Peter J., Sandia National Laboratories, Albuquerque, New Mexico 87185, & Air Force Research Laboratory SNHC, Hanscom AFB, Massachusetts 01731. Effects of deep defect concentration on junction space charge capacitance measurements. United States. doi:10.1063/1.2719291.
Buchwald, Walter R., Morath, Christian P., Drevinsky, Peter J., Sandia National Laboratories, Albuquerque, New Mexico 87185, and Air Force Research Laboratory SNHC, Hanscom AFB, Massachusetts 01731. Tue . "Effects of deep defect concentration on junction space charge capacitance measurements". United States. doi:10.1063/1.2719291.
@article{osti_20982850,
title = {Effects of deep defect concentration on junction space charge capacitance measurements},
author = {Buchwald, Walter R. and Morath, Christian P. and Drevinsky, Peter J. and Sandia National Laboratories, Albuquerque, New Mexico 87185 and Air Force Research Laboratory SNHC, Hanscom AFB, Massachusetts 01731},
abstractNote = {Expressions for the small signal capacitance and pulse bias-induced large signal capacitance transient of an abrupt n{sup +}-p junction in the presence of one or more deep traps of arbitrary concentrations are presented. The expressions show that a simple inverse relationship between the measured small signal capacitance and the junction's space charge depletion width is not expected. Unexpected effects on defect capture cross section and defect concentration determination, when applied to deep level transient spectroscopy simulations, are also reported. Experimental results of both temperature dependent capacitance and transient capacitance measurements performed on electron irradiated Si n{sup +}-p junctions are presented and analyzed in the context of these expressions. Modeling of the measured signals using these expressions is shown to be in good agreement with the experiment.},
doi = {10.1063/1.2719291},
journal = {Journal of Applied Physics},
number = 9,
volume = 101,
place = {United States},
year = {Tue May 01 00:00:00 EDT 2007},
month = {Tue May 01 00:00:00 EDT 2007}
}