skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Preparation and structure of porous dielectrics by plasma enhanced chemical vapor deposition

Abstract

The preparation of ultralow dielectric constant porous silicon, carbon, oxygen, hydrogen alloy dielectrics, called 'pSiCOH', using a production 200 mm plasma enhanced chemical vapor deposition tool and a thermal treatment is reported here. The effect of deposition temperature on the pSiCOH film is examined using Fourier transform infrared (FTIR) spectroscopy, dielectric constant (k), and film shrinkage measurements. For all deposition temperatures, carbon in the final porous film is shown to be predominantly Si-CH{sub 3} species, and lower k is shown to correlate with increased concentration of Si-CH{sub 3}. NMR and FTIR spectroscopies clearly detect the loss of a removable, unstable, hydrocarbon (CH{sub x}) phase during the thermal treatment. Also detected are increased cross-linking of the Si-O skeleton, and concentration changes for three distinct structures of carbon. In the as deposited films, deposition temperature also affects the hydrocarbon (CH{sub x}) content and the presence of C=O and C=C functional groups.

Authors:
; ; ; ; ;  [1];  [2];  [2]
  1. IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
20982845
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 101; Journal Issue: 9; Other Information: DOI: 10.1063/1.2718278; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARBON COMPOUNDS; CHEMICAL VAPOR DEPOSITION; CROSS-LINKING; DIELECTRIC MATERIALS; FOURIER TRANSFORMATION; HEAT TREATMENTS; HYDROCARBONS; HYDROGEN COMPOUNDS; INFRARED SPECTRA; NUCLEAR MAGNETIC RESONANCE; OXYGEN COMPOUNDS; PERMITTIVITY; POROUS MATERIALS; SHRINKAGE; SILICON COMPOUNDS; SPECTROSCOPY; THIN FILMS

Citation Formats

Gates, S. M., Neumayer, D. A., Sherwood, M. H., Grill, A., Wang, X., Sankarapandian, M., IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120-6099, and IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598. Preparation and structure of porous dielectrics by plasma enhanced chemical vapor deposition. United States: N. p., 2007. Web. doi:10.1063/1.2718278.
Gates, S. M., Neumayer, D. A., Sherwood, M. H., Grill, A., Wang, X., Sankarapandian, M., IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120-6099, & IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598. Preparation and structure of porous dielectrics by plasma enhanced chemical vapor deposition. United States. doi:10.1063/1.2718278.
Gates, S. M., Neumayer, D. A., Sherwood, M. H., Grill, A., Wang, X., Sankarapandian, M., IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120-6099, and IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598. Tue . "Preparation and structure of porous dielectrics by plasma enhanced chemical vapor deposition". United States. doi:10.1063/1.2718278.
@article{osti_20982845,
title = {Preparation and structure of porous dielectrics by plasma enhanced chemical vapor deposition},
author = {Gates, S. M. and Neumayer, D. A. and Sherwood, M. H. and Grill, A. and Wang, X. and Sankarapandian, M. and IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120-6099 and IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598},
abstractNote = {The preparation of ultralow dielectric constant porous silicon, carbon, oxygen, hydrogen alloy dielectrics, called 'pSiCOH', using a production 200 mm plasma enhanced chemical vapor deposition tool and a thermal treatment is reported here. The effect of deposition temperature on the pSiCOH film is examined using Fourier transform infrared (FTIR) spectroscopy, dielectric constant (k), and film shrinkage measurements. For all deposition temperatures, carbon in the final porous film is shown to be predominantly Si-CH{sub 3} species, and lower k is shown to correlate with increased concentration of Si-CH{sub 3}. NMR and FTIR spectroscopies clearly detect the loss of a removable, unstable, hydrocarbon (CH{sub x}) phase during the thermal treatment. Also detected are increased cross-linking of the Si-O skeleton, and concentration changes for three distinct structures of carbon. In the as deposited films, deposition temperature also affects the hydrocarbon (CH{sub x}) content and the presence of C=O and C=C functional groups.},
doi = {10.1063/1.2718278},
journal = {Journal of Applied Physics},
number = 9,
volume = 101,
place = {United States},
year = {Tue May 01 00:00:00 EDT 2007},
month = {Tue May 01 00:00:00 EDT 2007}
}