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Title: Wettability study of modified silicon dioxide surface using environmental scanning electron microscopy

Abstract

The wettability analysis is often used to characterize a surface in micro and nanometer scale. At these small scales, effects of the contact line tension are also expected to play a significant role. Wettability effect is studied using environmental scanning electron microscopy on silicon dioxide surface modified by a low-energy electron irradiation method. Electron-induced wettability variation and patterning at micrometer scale on silicon dioxide substrate allow investigating the contact angle dependence on the water droplet line curvature and calculating values of the line tension of a three-phase system (solid-liquid-vapor) of about 10{sup -9} J/m that is consistent with theoretical estimations. It is found that the sign of the line tension alters from positive for hydrophilic surface to negative for hydrophobic one.

Authors:
; ;  [1];  [2]
  1. Department of Physical Electronics, School of Electrical Engineering, Tel Aviv University, 69978 (Israel)
  2. (Israel)
Publication Date:
OSTI Identifier:
20982833
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 101; Journal Issue: 8; Other Information: DOI: 10.1063/1.2721945; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DROPLETS; ELECTRON BEAMS; ELECTRONS; IRRADIATION; SCANNING ELECTRON MICROSCOPY; SILICON OXIDES; SUBSTRATES; WETTABILITY

Citation Formats

Aronov, Daniel, Rosenman, Gil, Barkay, Zahava, and Wolfson Applied Materials Research Center, Tel Aviv University, 69978. Wettability study of modified silicon dioxide surface using environmental scanning electron microscopy. United States: N. p., 2007. Web. doi:10.1063/1.2721945.
Aronov, Daniel, Rosenman, Gil, Barkay, Zahava, & Wolfson Applied Materials Research Center, Tel Aviv University, 69978. Wettability study of modified silicon dioxide surface using environmental scanning electron microscopy. United States. doi:10.1063/1.2721945.
Aronov, Daniel, Rosenman, Gil, Barkay, Zahava, and Wolfson Applied Materials Research Center, Tel Aviv University, 69978. Sun . "Wettability study of modified silicon dioxide surface using environmental scanning electron microscopy". United States. doi:10.1063/1.2721945.
@article{osti_20982833,
title = {Wettability study of modified silicon dioxide surface using environmental scanning electron microscopy},
author = {Aronov, Daniel and Rosenman, Gil and Barkay, Zahava and Wolfson Applied Materials Research Center, Tel Aviv University, 69978},
abstractNote = {The wettability analysis is often used to characterize a surface in micro and nanometer scale. At these small scales, effects of the contact line tension are also expected to play a significant role. Wettability effect is studied using environmental scanning electron microscopy on silicon dioxide surface modified by a low-energy electron irradiation method. Electron-induced wettability variation and patterning at micrometer scale on silicon dioxide substrate allow investigating the contact angle dependence on the water droplet line curvature and calculating values of the line tension of a three-phase system (solid-liquid-vapor) of about 10{sup -9} J/m that is consistent with theoretical estimations. It is found that the sign of the line tension alters from positive for hydrophilic surface to negative for hydrophobic one.},
doi = {10.1063/1.2721945},
journal = {Journal of Applied Physics},
number = 8,
volume = 101,
place = {United States},
year = {Sun Apr 15 00:00:00 EDT 2007},
month = {Sun Apr 15 00:00:00 EDT 2007}
}