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Title: Effects of low-fluence swift iodine ion bombardment on the crystallization of ion-beam-synthesized silicon carbide

Abstract

Ion beam synthesis using high-fluence carbon ion implantation in silicon in combination with subsequent or in situ thermal annealing has been shown to be able to form nanocrystalline cubic SiC (3C-SiC) layers in silicon. In this study, a silicon carbide layer was synthesized by 40-keV {sup 12}C{sup +} implantation of a p-type (100) Si wafer at a fluence of 6.5x10{sup 17} ions/cm{sup 2} at an elevated temperature. The existence of the implanted carbon in Si substrate was investigated by time-of-flight energy elastic recoil detection analysis. The SiC layer was subsequently irradiated by 10-30 MeV {sup 127}I ions to a very low fluence of 10{sup 12} ions/cm{sup 2} at temperatures from 80 to 800 degree sign C to study the effect on the crystallization of the SiC layer. Infrared spectroscopy and Raman scattering measurement were used to monitor the formation of SiC and detailed information about the SiC film properties was obtained by analyzing the peak shape of the Si-C stretching mode absorption. The change in crystallinity of the synthesized layer was probed by glancing incidence x-ray diffraction measurement and transmission electron microscopy was also used to confirm the results and to model the crystallization process. The results from all thesemore » measurements showed in a coherent way that the synthesized structure was a polycrystalline layer with nanometer sized SiC crystals buried in a-Si matrix. The crystallinity of the SiC layer was enhanced by the low-fluence swift heavy ion bombardment and also favored by higher energy, higher fluence, and higher substrate temperature. It is suggested that electronic stopping plays a dominant role in the enhancement.« less

Authors:
; ; ; ; ; ; ;  [1];  [2];  [2];  [2];  [2]
  1. FNRF, Department of Physics, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand)
  2. (Sweden)
Publication Date:
OSTI Identifier:
20982830
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 101; Journal Issue: 8; Other Information: DOI: 10.1063/1.2720090; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION SPECTROSCOPY; ANNEALING; CARBON IONS; CRYSTAL STRUCTURE; CRYSTALLIZATION; ENERGY-LOSS SPECTROSCOPY; INFRARED SPECTRA; IODINE 127 BEAMS; IODINE IONS; ION IMPLANTATION; MEV RANGE 10-100; NANOSTRUCTURES; RAMAN EFFECT; RAMAN SPECTRA; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON CARBIDES; THIN FILMS; TIME-OF-FLIGHT METHOD; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION

Citation Formats

Intarasiri, S., Yu, L. D., Singkarat, S., Hallen, A., Lu, J., Ottosson, M., Jensen, J., Possnert, G., Department of Microelectronics and Information Technology, Royal Institute of Technology, Electrum 229, S-164 40 Kista-Stockholm, Department of Engineering Sciences, Uppsala University, SE-75 121 Uppsala, Department of Materials Chemistry, Uppsala University, SE-75 121 Uppsala, and The Angstroem Laboratory, Division of Ion Physics, Uppsala University, SE-75 121 Uppsala. Effects of low-fluence swift iodine ion bombardment on the crystallization of ion-beam-synthesized silicon carbide. United States: N. p., 2007. Web. doi:10.1063/1.2720090.
Intarasiri, S., Yu, L. D., Singkarat, S., Hallen, A., Lu, J., Ottosson, M., Jensen, J., Possnert, G., Department of Microelectronics and Information Technology, Royal Institute of Technology, Electrum 229, S-164 40 Kista-Stockholm, Department of Engineering Sciences, Uppsala University, SE-75 121 Uppsala, Department of Materials Chemistry, Uppsala University, SE-75 121 Uppsala, & The Angstroem Laboratory, Division of Ion Physics, Uppsala University, SE-75 121 Uppsala. Effects of low-fluence swift iodine ion bombardment on the crystallization of ion-beam-synthesized silicon carbide. United States. doi:10.1063/1.2720090.
Intarasiri, S., Yu, L. D., Singkarat, S., Hallen, A., Lu, J., Ottosson, M., Jensen, J., Possnert, G., Department of Microelectronics and Information Technology, Royal Institute of Technology, Electrum 229, S-164 40 Kista-Stockholm, Department of Engineering Sciences, Uppsala University, SE-75 121 Uppsala, Department of Materials Chemistry, Uppsala University, SE-75 121 Uppsala, and The Angstroem Laboratory, Division of Ion Physics, Uppsala University, SE-75 121 Uppsala. Sun . "Effects of low-fluence swift iodine ion bombardment on the crystallization of ion-beam-synthesized silicon carbide". United States. doi:10.1063/1.2720090.
@article{osti_20982830,
title = {Effects of low-fluence swift iodine ion bombardment on the crystallization of ion-beam-synthesized silicon carbide},
author = {Intarasiri, S. and Yu, L. D. and Singkarat, S. and Hallen, A. and Lu, J. and Ottosson, M. and Jensen, J. and Possnert, G. and Department of Microelectronics and Information Technology, Royal Institute of Technology, Electrum 229, S-164 40 Kista-Stockholm and Department of Engineering Sciences, Uppsala University, SE-75 121 Uppsala and Department of Materials Chemistry, Uppsala University, SE-75 121 Uppsala and The Angstroem Laboratory, Division of Ion Physics, Uppsala University, SE-75 121 Uppsala},
abstractNote = {Ion beam synthesis using high-fluence carbon ion implantation in silicon in combination with subsequent or in situ thermal annealing has been shown to be able to form nanocrystalline cubic SiC (3C-SiC) layers in silicon. In this study, a silicon carbide layer was synthesized by 40-keV {sup 12}C{sup +} implantation of a p-type (100) Si wafer at a fluence of 6.5x10{sup 17} ions/cm{sup 2} at an elevated temperature. The existence of the implanted carbon in Si substrate was investigated by time-of-flight energy elastic recoil detection analysis. The SiC layer was subsequently irradiated by 10-30 MeV {sup 127}I ions to a very low fluence of 10{sup 12} ions/cm{sup 2} at temperatures from 80 to 800 degree sign C to study the effect on the crystallization of the SiC layer. Infrared spectroscopy and Raman scattering measurement were used to monitor the formation of SiC and detailed information about the SiC film properties was obtained by analyzing the peak shape of the Si-C stretching mode absorption. The change in crystallinity of the synthesized layer was probed by glancing incidence x-ray diffraction measurement and transmission electron microscopy was also used to confirm the results and to model the crystallization process. The results from all these measurements showed in a coherent way that the synthesized structure was a polycrystalline layer with nanometer sized SiC crystals buried in a-Si matrix. The crystallinity of the SiC layer was enhanced by the low-fluence swift heavy ion bombardment and also favored by higher energy, higher fluence, and higher substrate temperature. It is suggested that electronic stopping plays a dominant role in the enhancement.},
doi = {10.1063/1.2720090},
journal = {Journal of Applied Physics},
number = 8,
volume = 101,
place = {United States},
year = {Sun Apr 15 00:00:00 EDT 2007},
month = {Sun Apr 15 00:00:00 EDT 2007}
}
  • Low-energy Ar{sup +} ion bombardment of polycrystalline 3C-silicon carbide (poly-SiC) films is found to be a promising surface modification method to tailor the mechanical and interfacial properties of poly-SiC. The film average stress decreases as the ion energy and the bombardment time increase. Furthermore, this treatment is found to change the strain gradient of the films from positive to negative values. The observed changes in stress and strain gradient are explained by ion peening and thermal spikes models. In addition, the poly-SiC films show a significant enhancement in corrosion resistance by this treatment, which is attributed to a reduction inmore » surface energy and to an increase in the compressive stress in the near-surface region.« less
  • Ion beam mixing of Pt/Co bilayers using self ion (Pt{sup +}) beam results in formation of CoPt phase. Upon ion beam annealing the ion mixed samples using 4 MeV Si{sup +} ions at 300 deg. C, diffusion of Co towards the Pt/Co interface is observed. The Si{sup +} ion beam rotates the magnetization of the CoPt phase from in plane to out of plane of the film.
  • Thin films (9 {mu}m) of polyvinylidene fluoride (PVDF) are irradiated by swift heavy ions (180 MeV Ag{sup 14+}) in the fluence range 1{times}10{sup 10}{endash}1{times}10{sup 12}ions/cm{sup 2} with an electronic linear energy transfer LET{similar_to}11 keV/nm. In sharp contrast to the previous results, the most characteristic crystalline asymmetric and symmetric {open_quotes}CH{sub 2}{close_quotes} doublets (located at 3025 and 2985 cm{sup {minus}1}), have shown remarkable increase in their respective Fourier transform infrared (FTIR) absorbance intensities upon low fluence ion impact (10{sup 10} ions/cm{sup 2}). This increase in absorbance is in consonance with the simultaneous decrease of the transmission intensities of other crystalline bending vibrationmore » bands located at 532 (CF{sub 2} bending), 614, 796, and 975 cm{sup {minus}1} (all due to CH{sub 2} bending) at the similar ion fluence. It appears most probable from the results that, being a polar polymer, the molecular dipoles in PVDF forming a hydrogen bond network get realigned upon irradiation into a highly ordered state of chain molecules in the crystalline regions and create volume elements as crystallites. {copyright} 2001 American Institute of Physics.« less
  • Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} (BST) thick films with thickness up to 1 {mu}m were deposited on Pt-coated silicon substrates by ion beam sputtering, followed by an annealing treatment. It is demonstrated that pure well-crystallized perovskite phase could be obtained in thick BST films by a low temperature process (535 deg. C). The BST thick films show highly tunable dielectric properties with tunability (at 800 kV/cm) up to 51.0% and 66.2%, respectively, for the 0.5 and 1 {mu}m thick films. The relationship between strains and dielectric properties was systematically investigated in the thick films. The results suggest that a comparatively largermore » tensile thermal in-plane strain (0.15%) leads to the degradation in dielectric properties of the 0.5 {mu}m thick film; besides, strong defect-related inhomogeneous strains ({approx}0.3%) make the dielectric peaks smearing and broadening in the thick films, which, however, preferably results in high figure-of-merit factors over a wide operating temperature range. Moreover, the leakage current behavior in the BST thick films was found to be dominated by the space-charge-limited-current mechanism, irrespective of the film thickness.« less