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Title: Influence of redeposition on the plasma etching dynamics

Abstract

This work reports on measurements of the degree of redeposition of sputtered species during the etching of platinum (Pt), barium-strontium-titanate (BST), strontium-bismuth-tantalate (SBT), and photoresist (PR) in a high-density argon plasma. While PR exhibits a redeposition-free behavior, the degree of redeposition of Pt, BST, and SBT species increases from 10% to 95% as the argon pressure increases from 0.5 to 10 mTorr. These results are in good agreement with the predictions of a simple model accounting for the backscattering of sputtered species following their interaction with the gas phase. Based on these results and using other experimental data reported in the literature, it is further demonstrated that, depending on the plasma etching conditions, redeposition effects can induce misinterpretation of the etch rate data.

Authors:
; ; ; ;  [1];  [2];  [2];  [3]
  1. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
  2. (Canada)
  3. (United States)
Publication Date:
OSTI Identifier:
20982815
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 101; Journal Issue: 8; Other Information: DOI: 10.1063/1.2719015; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ARGON; BACKSCATTERING; BARIUM COMPOUNDS; BISMUTH COMPOUNDS; ETCHING; PLASMA; PLATINUM; SPUTTERING; STRONTIUM TITANATES; TANTALATES

Citation Formats

Stafford, L., Margot, J., Delprat, S., Chaker, M., Pearton, S. J., Departement de Physique, Universite de Montreal, Montreal, Quebec H3C 3J7, INRS, Energie, Materiaux et Telecommunications, Vasrennes, Quebec J3X 1S2, and Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 116400. Influence of redeposition on the plasma etching dynamics. United States: N. p., 2007. Web. doi:10.1063/1.2719015.
Stafford, L., Margot, J., Delprat, S., Chaker, M., Pearton, S. J., Departement de Physique, Universite de Montreal, Montreal, Quebec H3C 3J7, INRS, Energie, Materiaux et Telecommunications, Vasrennes, Quebec J3X 1S2, & Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 116400. Influence of redeposition on the plasma etching dynamics. United States. doi:10.1063/1.2719015.
Stafford, L., Margot, J., Delprat, S., Chaker, M., Pearton, S. J., Departement de Physique, Universite de Montreal, Montreal, Quebec H3C 3J7, INRS, Energie, Materiaux et Telecommunications, Vasrennes, Quebec J3X 1S2, and Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 116400. Sun . "Influence of redeposition on the plasma etching dynamics". United States. doi:10.1063/1.2719015.
@article{osti_20982815,
title = {Influence of redeposition on the plasma etching dynamics},
author = {Stafford, L. and Margot, J. and Delprat, S. and Chaker, M. and Pearton, S. J. and Departement de Physique, Universite de Montreal, Montreal, Quebec H3C 3J7 and INRS, Energie, Materiaux et Telecommunications, Vasrennes, Quebec J3X 1S2 and Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 116400},
abstractNote = {This work reports on measurements of the degree of redeposition of sputtered species during the etching of platinum (Pt), barium-strontium-titanate (BST), strontium-bismuth-tantalate (SBT), and photoresist (PR) in a high-density argon plasma. While PR exhibits a redeposition-free behavior, the degree of redeposition of Pt, BST, and SBT species increases from 10% to 95% as the argon pressure increases from 0.5 to 10 mTorr. These results are in good agreement with the predictions of a simple model accounting for the backscattering of sputtered species following their interaction with the gas phase. Based on these results and using other experimental data reported in the literature, it is further demonstrated that, depending on the plasma etching conditions, redeposition effects can induce misinterpretation of the etch rate data.},
doi = {10.1063/1.2719015},
journal = {Journal of Applied Physics},
number = 8,
volume = 101,
place = {United States},
year = {Sun Apr 15 00:00:00 EDT 2007},
month = {Sun Apr 15 00:00:00 EDT 2007}
}