skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Growth of ferroelectric bismuth lanthanum nickel titanate thin films by rf magnetron sputtering

Abstract

The epitaxial growth, structural properties, and ferroelectric properties of bismuth lanthanum nickel titanate (Bi{sub 1-x}La{sub x}) (Ni{sub 0.5}Ti{sub 0.5})O{sub 3} (BLNT) thin films deposited on Pt(100)/MgO(100) substrates by rf magnetron sputtering have been investigated using x-ray diffraction, transmission electron microscope, and polarization-electric field hysteresis loop measurements. The ferroelectric BLNT(00l) phase with c-axis orientation and a single-phase tetragonal perovskite structure appeared at x{>=}0.3. The tetragonality (c/a) increased significantly from 1.004 to 1.028 with increasing La content. The fabricated BLNT films of x{>=}0.3 indicated the apparent fourfold rotational symmetry observed for a MgO(202) substrate, a bottom Pt(202) electrode, and a BLNT(101) ferroelectric film, based on {phi} scan measurements. These results imply that the present La-substituted BLNT films are grown heteroepitaxially at x{>=}0.3. It was confirmed that Bi in the BLNT films is in a trivalent state at A sites in the perovskite crystal, based on x-ray anomalous diffraction measurements and x-ray absorption near edge structure spectra. The sputtering technique using compacted powder targets designed by taking the bond dissociation energy of metal oxides into account provided epitaxial perovskite-structured BLNT thin films on Pt(100)/MgO(100) substrates. It is shown that the c-axis oriented epitaxial BLNT film exhibits a hysteresis loop shape with a P{submore » r} value of 12 {mu}C/cm{sup 2} that is comparable to typical high-performance Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12} (BLT) film.« less

Authors:
; ; ; ; ; ; ; ; ; ; ; ;  [1];  [2];  [2];  [2]
  1. Department of Materials Science and Chemistry, Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2201 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
20982805
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 101; Journal Issue: 7; Other Information: DOI: 10.1063/1.2713352; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION SPECTROSCOPY; BISMUTH COMPOUNDS; CHEMICAL BONDS; CRYSTAL GROWTH; DEPOSITION; DISSOCIATION ENERGY; EPITAXY; FERROELECTRIC MATERIALS; HYSTERESIS; LANTHANUM COMPOUNDS; MAGNESIUM OXIDES; NICKEL COMPOUNDS; PEROVSKITE; POLARIZATION; SPUTTERING; THIN FILMS; TITANATES; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION; X-RAY SPECTROSCOPY

Citation Formats

Kobune, Masafumi, Fukushima, Koji, Yamaji, Toru, Tada, Hideto, Yazawa, Tetsuo, Fujisawa, Hironori, Shimizu, Masaru, Nishihata, Yasuo, Matsumura, Daiju, Mizuki, Jun'ichiro, Yamaguchi, Hideshi, Kotaka, Yasutoshi, Honda, Koichiro, Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2201, Synchrotron Radiation Research Center, Japan Atomic Energy Agency, Mikazuki, Sayo, Hyogo 679-5148, and Device and Materials Laboratories, Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197. Growth of ferroelectric bismuth lanthanum nickel titanate thin films by rf magnetron sputtering. United States: N. p., 2007. Web. doi:10.1063/1.2713352.
Kobune, Masafumi, Fukushima, Koji, Yamaji, Toru, Tada, Hideto, Yazawa, Tetsuo, Fujisawa, Hironori, Shimizu, Masaru, Nishihata, Yasuo, Matsumura, Daiju, Mizuki, Jun'ichiro, Yamaguchi, Hideshi, Kotaka, Yasutoshi, Honda, Koichiro, Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2201, Synchrotron Radiation Research Center, Japan Atomic Energy Agency, Mikazuki, Sayo, Hyogo 679-5148, & Device and Materials Laboratories, Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197. Growth of ferroelectric bismuth lanthanum nickel titanate thin films by rf magnetron sputtering. United States. doi:10.1063/1.2713352.
Kobune, Masafumi, Fukushima, Koji, Yamaji, Toru, Tada, Hideto, Yazawa, Tetsuo, Fujisawa, Hironori, Shimizu, Masaru, Nishihata, Yasuo, Matsumura, Daiju, Mizuki, Jun'ichiro, Yamaguchi, Hideshi, Kotaka, Yasutoshi, Honda, Koichiro, Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2201, Synchrotron Radiation Research Center, Japan Atomic Energy Agency, Mikazuki, Sayo, Hyogo 679-5148, and Device and Materials Laboratories, Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197. Sun . "Growth of ferroelectric bismuth lanthanum nickel titanate thin films by rf magnetron sputtering". United States. doi:10.1063/1.2713352.
@article{osti_20982805,
title = {Growth of ferroelectric bismuth lanthanum nickel titanate thin films by rf magnetron sputtering},
author = {Kobune, Masafumi and Fukushima, Koji and Yamaji, Toru and Tada, Hideto and Yazawa, Tetsuo and Fujisawa, Hironori and Shimizu, Masaru and Nishihata, Yasuo and Matsumura, Daiju and Mizuki, Jun'ichiro and Yamaguchi, Hideshi and Kotaka, Yasutoshi and Honda, Koichiro and Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2201 and Synchrotron Radiation Research Center, Japan Atomic Energy Agency, Mikazuki, Sayo, Hyogo 679-5148 and Device and Materials Laboratories, Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197},
abstractNote = {The epitaxial growth, structural properties, and ferroelectric properties of bismuth lanthanum nickel titanate (Bi{sub 1-x}La{sub x}) (Ni{sub 0.5}Ti{sub 0.5})O{sub 3} (BLNT) thin films deposited on Pt(100)/MgO(100) substrates by rf magnetron sputtering have been investigated using x-ray diffraction, transmission electron microscope, and polarization-electric field hysteresis loop measurements. The ferroelectric BLNT(00l) phase with c-axis orientation and a single-phase tetragonal perovskite structure appeared at x{>=}0.3. The tetragonality (c/a) increased significantly from 1.004 to 1.028 with increasing La content. The fabricated BLNT films of x{>=}0.3 indicated the apparent fourfold rotational symmetry observed for a MgO(202) substrate, a bottom Pt(202) electrode, and a BLNT(101) ferroelectric film, based on {phi} scan measurements. These results imply that the present La-substituted BLNT films are grown heteroepitaxially at x{>=}0.3. It was confirmed that Bi in the BLNT films is in a trivalent state at A sites in the perovskite crystal, based on x-ray anomalous diffraction measurements and x-ray absorption near edge structure spectra. The sputtering technique using compacted powder targets designed by taking the bond dissociation energy of metal oxides into account provided epitaxial perovskite-structured BLNT thin films on Pt(100)/MgO(100) substrates. It is shown that the c-axis oriented epitaxial BLNT film exhibits a hysteresis loop shape with a P{sub r} value of 12 {mu}C/cm{sup 2} that is comparable to typical high-performance Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12} (BLT) film.},
doi = {10.1063/1.2713352},
journal = {Journal of Applied Physics},
number = 7,
volume = 101,
place = {United States},
year = {Sun Apr 01 00:00:00 EDT 2007},
month = {Sun Apr 01 00:00:00 EDT 2007}
}