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Title: Growth of ferroelectric bismuth lanthanum nickel titanate thin films by rf magnetron sputtering

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.2713352· OSTI ID:20982805
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  1. Department of Materials Science and Chemistry, Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2201 (Japan)

The epitaxial growth, structural properties, and ferroelectric properties of bismuth lanthanum nickel titanate (Bi{sub 1-x}La{sub x}) (Ni{sub 0.5}Ti{sub 0.5})O{sub 3} (BLNT) thin films deposited on Pt(100)/MgO(100) substrates by rf magnetron sputtering have been investigated using x-ray diffraction, transmission electron microscope, and polarization-electric field hysteresis loop measurements. The ferroelectric BLNT(00l) phase with c-axis orientation and a single-phase tetragonal perovskite structure appeared at x{>=}0.3. The tetragonality (c/a) increased significantly from 1.004 to 1.028 with increasing La content. The fabricated BLNT films of x{>=}0.3 indicated the apparent fourfold rotational symmetry observed for a MgO(202) substrate, a bottom Pt(202) electrode, and a BLNT(101) ferroelectric film, based on {phi} scan measurements. These results imply that the present La-substituted BLNT films are grown heteroepitaxially at x{>=}0.3. It was confirmed that Bi in the BLNT films is in a trivalent state at A sites in the perovskite crystal, based on x-ray anomalous diffraction measurements and x-ray absorption near edge structure spectra. The sputtering technique using compacted powder targets designed by taking the bond dissociation energy of metal oxides into account provided epitaxial perovskite-structured BLNT thin films on Pt(100)/MgO(100) substrates. It is shown that the c-axis oriented epitaxial BLNT film exhibits a hysteresis loop shape with a P{sub r} value of 12 {mu}C/cm{sup 2} that is comparable to typical high-performance Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12} (BLT) film.

OSTI ID:
20982805
Journal Information:
Journal of Applied Physics, Vol. 101, Issue 7; Other Information: DOI: 10.1063/1.2713352; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English