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Title: Conducting grain boundaries in the high-dielectric-constant ceramic CaCu{sub 3}Ti{sub 4}O{sub 12}

Abstract

To clarify the electrical property of grain boundaries, the fine-grained ceramics CaCu{sub 3}Ti{sub 4}O{sub 12} have been treated with the hydrofluoric acid to remove the parts of grain boundaries. The dielectric response difference between the etched samples and the pristine ones indicates that the ceramic CaCu{sub 3}Ti{sub 4}O{sub 12} consists of insulating or semiconducting grains with conducting grain boundaries. Therefore, the giant dielectric phenomenon is supposed not to derive from the grain boundary barrier layer capacitance effect. The possible mechanism is discussed.

Authors:
; ; ; ; ;  [1];  [2]
  1. National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China)
  2. (China)
Publication Date:
OSTI Identifier:
20982804
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 101; Journal Issue: 7; Other Information: DOI: 10.1063/1.2713943; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CALCIUM COMPOUNDS; CAPACITANCE; CERAMICS; COPPER COMPOUNDS; DIELECTRIC MATERIALS; ETCHING; GRAIN BOUNDARIES; HYDROFLUORIC ACID; PERMITTIVITY; TITANATES

Citation Formats

Chen, K., Li, G. L., Gao, F., Liu, J., Liu, J. M., Zhu, J. S., and Department of Physics, Nanjing University, Nanjing 210093. Conducting grain boundaries in the high-dielectric-constant ceramic CaCu{sub 3}Ti{sub 4}O{sub 12}. United States: N. p., 2007. Web. doi:10.1063/1.2713943.
Chen, K., Li, G. L., Gao, F., Liu, J., Liu, J. M., Zhu, J. S., & Department of Physics, Nanjing University, Nanjing 210093. Conducting grain boundaries in the high-dielectric-constant ceramic CaCu{sub 3}Ti{sub 4}O{sub 12}. United States. doi:10.1063/1.2713943.
Chen, K., Li, G. L., Gao, F., Liu, J., Liu, J. M., Zhu, J. S., and Department of Physics, Nanjing University, Nanjing 210093. Sun . "Conducting grain boundaries in the high-dielectric-constant ceramic CaCu{sub 3}Ti{sub 4}O{sub 12}". United States. doi:10.1063/1.2713943.
@article{osti_20982804,
title = {Conducting grain boundaries in the high-dielectric-constant ceramic CaCu{sub 3}Ti{sub 4}O{sub 12}},
author = {Chen, K. and Li, G. L. and Gao, F. and Liu, J. and Liu, J. M. and Zhu, J. S. and Department of Physics, Nanjing University, Nanjing 210093},
abstractNote = {To clarify the electrical property of grain boundaries, the fine-grained ceramics CaCu{sub 3}Ti{sub 4}O{sub 12} have been treated with the hydrofluoric acid to remove the parts of grain boundaries. The dielectric response difference between the etched samples and the pristine ones indicates that the ceramic CaCu{sub 3}Ti{sub 4}O{sub 12} consists of insulating or semiconducting grains with conducting grain boundaries. Therefore, the giant dielectric phenomenon is supposed not to derive from the grain boundary barrier layer capacitance effect. The possible mechanism is discussed.},
doi = {10.1063/1.2713943},
journal = {Journal of Applied Physics},
number = 7,
volume = 101,
place = {United States},
year = {Sun Apr 01 00:00:00 EDT 2007},
month = {Sun Apr 01 00:00:00 EDT 2007}
}