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Title: Properties of dominant electron trap center in n-type SiC epilayers by means of deep level transient spectroscopy

Abstract

Characterization of dominant electron trap in as-grown SiC epilayers has been carried out using deep level transient spectroscopy. Two electron traps E1 and Z{sub 1} at E{sub c}-0.21 and E{sub c}-0.61 are observed, respectively; Z{sub 1} being the dominant level. Line shape fitting, capture cross section, and insensitivity with doping concentration have revealed interesting features of Z{sub 1} center. Spatial distribution discloses that the level is generated in the vicinity of epilayers/substrate interface and the rest of the overgrown layers is defect-free. Owing to the Si-rich growth conditions, the depth profile of Z{sub 1} relates it to carbon vacancy. The alpha particle irradiation transforms Z{sub 1} level into Z{sub 1}/Z{sub 2} center involving silicon and carbon vacancies. Isochronal annealing study further strengthens the proposed origin of the debated level.

Authors:
; ; ; ; ;  [1];  [2];  [3]
  1. Semiconductor Division, The Islamia University of Bahawalpur, 63100 Bahawalpur (Pakistan)
  2. (IFM), Linkoeping University, SE-58183 Linkoeping (Sweden)
  3. (Pakistan)
Publication Date:
OSTI Identifier:
20982798
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 101; Journal Issue: 7; Other Information: DOI: 10.1063/1.2715534; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALPHA PARTICLES; ANNEALING; CAPTURE; CARBON; CROSS SECTIONS; CRYSTAL GROWTH; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRONS; EPITAXY; IRRADIATION; LAYERS; SEMICONDUCTOR MATERIALS; SILICON; SILICON CARBIDES; SPATIAL DISTRIBUTION; SUBSTRATES; TRAPS; VACANCIES

Citation Formats

Asghar, M., Hussain, I., Noor, H. S., Iqbal, F., Wahab, Q., Bhatti, A. S., Department of Physics, Chemistry, and Biology, and Department of Physics, COMSATS Institute of Information Technology, H-8 Islamabad. Properties of dominant electron trap center in n-type SiC epilayers by means of deep level transient spectroscopy. United States: N. p., 2007. Web. doi:10.1063/1.2715534.
Asghar, M., Hussain, I., Noor, H. S., Iqbal, F., Wahab, Q., Bhatti, A. S., Department of Physics, Chemistry, and Biology, & Department of Physics, COMSATS Institute of Information Technology, H-8 Islamabad. Properties of dominant electron trap center in n-type SiC epilayers by means of deep level transient spectroscopy. United States. doi:10.1063/1.2715534.
Asghar, M., Hussain, I., Noor, H. S., Iqbal, F., Wahab, Q., Bhatti, A. S., Department of Physics, Chemistry, and Biology, and Department of Physics, COMSATS Institute of Information Technology, H-8 Islamabad. Sun . "Properties of dominant electron trap center in n-type SiC epilayers by means of deep level transient spectroscopy". United States. doi:10.1063/1.2715534.
@article{osti_20982798,
title = {Properties of dominant electron trap center in n-type SiC epilayers by means of deep level transient spectroscopy},
author = {Asghar, M. and Hussain, I. and Noor, H. S. and Iqbal, F. and Wahab, Q. and Bhatti, A. S. and Department of Physics, Chemistry, and Biology and Department of Physics, COMSATS Institute of Information Technology, H-8 Islamabad},
abstractNote = {Characterization of dominant electron trap in as-grown SiC epilayers has been carried out using deep level transient spectroscopy. Two electron traps E1 and Z{sub 1} at E{sub c}-0.21 and E{sub c}-0.61 are observed, respectively; Z{sub 1} being the dominant level. Line shape fitting, capture cross section, and insensitivity with doping concentration have revealed interesting features of Z{sub 1} center. Spatial distribution discloses that the level is generated in the vicinity of epilayers/substrate interface and the rest of the overgrown layers is defect-free. Owing to the Si-rich growth conditions, the depth profile of Z{sub 1} relates it to carbon vacancy. The alpha particle irradiation transforms Z{sub 1} level into Z{sub 1}/Z{sub 2} center involving silicon and carbon vacancies. Isochronal annealing study further strengthens the proposed origin of the debated level.},
doi = {10.1063/1.2715534},
journal = {Journal of Applied Physics},
number = 7,
volume = 101,
place = {United States},
year = {Sun Apr 01 00:00:00 EDT 2007},
month = {Sun Apr 01 00:00:00 EDT 2007}
}