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Title: The determinants of hydrogen concentrations in hydrogenated amorphous silicon films prepared using a triode deposition system

Abstract

It is important to reduce the hydrogen concentration, in particular, the Si-H{sub 2} bond concentration, in a hydrogenated amorphous silicon film to improve its light-soaking stability. In a previous study, we found that a triode configuration plasma enhanced chemical vapor deposition method provides high quality and a very low hydrogen concentration film; however, the origin of the hydrogen reduction has been unknown. In this article, we investigate the essential factor causing the very low hydrogen concentrations observed in the triode system. In several experiments, we observed strong influences of deposition precursors on the resulting hydrogen concentrations. We propose that due to a steric hindrance, the hydrogen elimination process during film growth is disturbed when higher silane radicals stick to a growth surface. In a triode system, corresponding with the separation of the film growth surface from the precursor generation region, the contribution of higher silane radicals to film growth is suppressed due to their short diffusion length and frequent collisions with silane molecules.

Authors:
; ;  [1];  [2];  [2]
  1. National Institute of Advanced Industrial Science and Technology, Research Center for Photovoltaics, Central 2-13, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
20982781
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 101; Journal Issue: 6; Other Information: DOI: 10.1063/1.2715671; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; DIFFUSION LENGTH; HYDROGEN; PRECURSOR; RADICALS; SEMICONDUCTOR MATERIALS; SILANES; SILICON; THIN FILMS

Citation Formats

Shimizu, Satoshi, Matsuda, Akihisa, Kondo, Michio, Research Institute for Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, and National Institute of Advanced Industrial Science and Technology, Research Center for Photovoltaics, Central 2-13, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568. The determinants of hydrogen concentrations in hydrogenated amorphous silicon films prepared using a triode deposition system. United States: N. p., 2007. Web. doi:10.1063/1.2715671.
Shimizu, Satoshi, Matsuda, Akihisa, Kondo, Michio, Research Institute for Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, & National Institute of Advanced Industrial Science and Technology, Research Center for Photovoltaics, Central 2-13, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568. The determinants of hydrogen concentrations in hydrogenated amorphous silicon films prepared using a triode deposition system. United States. doi:10.1063/1.2715671.
Shimizu, Satoshi, Matsuda, Akihisa, Kondo, Michio, Research Institute for Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, and National Institute of Advanced Industrial Science and Technology, Research Center for Photovoltaics, Central 2-13, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568. Thu . "The determinants of hydrogen concentrations in hydrogenated amorphous silicon films prepared using a triode deposition system". United States. doi:10.1063/1.2715671.
@article{osti_20982781,
title = {The determinants of hydrogen concentrations in hydrogenated amorphous silicon films prepared using a triode deposition system},
author = {Shimizu, Satoshi and Matsuda, Akihisa and Kondo, Michio and Research Institute for Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510 and National Institute of Advanced Industrial Science and Technology, Research Center for Photovoltaics, Central 2-13, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568},
abstractNote = {It is important to reduce the hydrogen concentration, in particular, the Si-H{sub 2} bond concentration, in a hydrogenated amorphous silicon film to improve its light-soaking stability. In a previous study, we found that a triode configuration plasma enhanced chemical vapor deposition method provides high quality and a very low hydrogen concentration film; however, the origin of the hydrogen reduction has been unknown. In this article, we investigate the essential factor causing the very low hydrogen concentrations observed in the triode system. In several experiments, we observed strong influences of deposition precursors on the resulting hydrogen concentrations. We propose that due to a steric hindrance, the hydrogen elimination process during film growth is disturbed when higher silane radicals stick to a growth surface. In a triode system, corresponding with the separation of the film growth surface from the precursor generation region, the contribution of higher silane radicals to film growth is suppressed due to their short diffusion length and frequent collisions with silane molecules.},
doi = {10.1063/1.2715671},
journal = {Journal of Applied Physics},
number = 6,
volume = 101,
place = {United States},
year = {Thu Mar 15 00:00:00 EDT 2007},
month = {Thu Mar 15 00:00:00 EDT 2007}
}