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Title: Thermal stability of nitrogen-doped SrTiO{sub 3} films: Electronic and optical properties studies

Abstract

The thermal stability of nitrogen-doped SrTiO{sub 3} (001) films in terms of electronic and optical properties has been studied by using x-ray photoemission spectroscopy, x-ray absorption spectroscopy, and spectroscopic ellipsometry techniques. The chemical states of nitrogen in nitrogen-doped SrTiO{sub 3} films include both substitutional and interstitial states. The N 2p states localized above the O 2p-derived valence band maximum are attributed to the change of optical properties. Postannealing will induce the valence band edge shift due to the thermal instability of interstitial N states, which may degrade the photocatalysis of nitrogen-doped SrTiO{sub 3} films during applications.

Authors:
; ; ; ; ; ;  [1];  [2];  [3];  [3];  [3];  [3]
  1. Department of Physics, National University of Singapore, Singapore 117542 (Singapore)
  2. (United States)
  3. (Singapore)
Publication Date:
OSTI Identifier:
20982763
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 101; Journal Issue: 6; Other Information: DOI: 10.1063/1.2713350; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION SPECTROSCOPY; ANNEALING; CHEMICAL STATE; DOPED MATERIALS; ELLIPSOMETRY; INTERSTITIALS; NITROGEN; OPTICAL PROPERTIES; PHOTOCATALYSIS; PHOTOCHEMISTRY; PHOTOEMISSION; STRONTIUM TITANATES; THIN FILMS; X-RAY PHOTOELECTRON SPECTROSCOPY; X-RAY SPECTRA; X-RAY SPECTROSCOPY

Citation Formats

Mi, Y. Y., Yu, Z., Wang, S. J., Gao, X. Y., Wee, A. T. S., Ong, C. K., Huan, C. H. A., Freescale Semiconductor Inc., Tempe, Arizona 85284, Institute of Materials Research and Engineering, Singapore 117602, Department of Physics, National University of Singapore, Singapore 117542, Institute of Materials Research and Engineering, Singapore 117602, and Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technology University, Singapore 637616. Thermal stability of nitrogen-doped SrTiO{sub 3} films: Electronic and optical properties studies. United States: N. p., 2007. Web. doi:10.1063/1.2713350.
Mi, Y. Y., Yu, Z., Wang, S. J., Gao, X. Y., Wee, A. T. S., Ong, C. K., Huan, C. H. A., Freescale Semiconductor Inc., Tempe, Arizona 85284, Institute of Materials Research and Engineering, Singapore 117602, Department of Physics, National University of Singapore, Singapore 117542, Institute of Materials Research and Engineering, Singapore 117602, & Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technology University, Singapore 637616. Thermal stability of nitrogen-doped SrTiO{sub 3} films: Electronic and optical properties studies. United States. doi:10.1063/1.2713350.
Mi, Y. Y., Yu, Z., Wang, S. J., Gao, X. Y., Wee, A. T. S., Ong, C. K., Huan, C. H. A., Freescale Semiconductor Inc., Tempe, Arizona 85284, Institute of Materials Research and Engineering, Singapore 117602, Department of Physics, National University of Singapore, Singapore 117542, Institute of Materials Research and Engineering, Singapore 117602, and Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technology University, Singapore 637616. Thu . "Thermal stability of nitrogen-doped SrTiO{sub 3} films: Electronic and optical properties studies". United States. doi:10.1063/1.2713350.
@article{osti_20982763,
title = {Thermal stability of nitrogen-doped SrTiO{sub 3} films: Electronic and optical properties studies},
author = {Mi, Y. Y. and Yu, Z. and Wang, S. J. and Gao, X. Y. and Wee, A. T. S. and Ong, C. K. and Huan, C. H. A. and Freescale Semiconductor Inc., Tempe, Arizona 85284 and Institute of Materials Research and Engineering, Singapore 117602 and Department of Physics, National University of Singapore, Singapore 117542 and Institute of Materials Research and Engineering, Singapore 117602 and Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technology University, Singapore 637616},
abstractNote = {The thermal stability of nitrogen-doped SrTiO{sub 3} (001) films in terms of electronic and optical properties has been studied by using x-ray photoemission spectroscopy, x-ray absorption spectroscopy, and spectroscopic ellipsometry techniques. The chemical states of nitrogen in nitrogen-doped SrTiO{sub 3} films include both substitutional and interstitial states. The N 2p states localized above the O 2p-derived valence band maximum are attributed to the change of optical properties. Postannealing will induce the valence band edge shift due to the thermal instability of interstitial N states, which may degrade the photocatalysis of nitrogen-doped SrTiO{sub 3} films during applications.},
doi = {10.1063/1.2713350},
journal = {Journal of Applied Physics},
number = 6,
volume = 101,
place = {United States},
year = {Thu Mar 15 00:00:00 EDT 2007},
month = {Thu Mar 15 00:00:00 EDT 2007}
}