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Title: Microstructure of Mn-doped {gamma}-Ga{sub 2}O{sub 3} epitaxial film on sapphire (0001) with room temperature ferromagnetism

Abstract

Mn-doped Ga{sub 2}O{sub 3} thin film showing room temperature ferromagnetism has been grown on a sapphire (0001) plane by using a pulsed-laser deposition technique. The microstructure of the Mn-doped film is investigated in detail using selected-area electron diffraction, high-resolution transmission electron microscopy (HRTEM), x-ray energy-dispersive spectroscopy, and electron energy-loss spectroscopy, in comparison with an undoped film. Careful diffraction analysis with the [2110]{sub Al{sub 2}}{sub O{sub 3}} and [1010]{sub Al{sub 2}}{sub O{sub 3}} zone axes of the substrates reveals that the Mn-doped film shows the {gamma}-Ga{sub 2}O{sub 3} phase with a defective spinel structure, while the undoped film shows the {beta}-Ga{sub 2}O{sub 3} phase. The orientation relationship between the film and substrate is determined by electron diffraction and HRTEM from the interface region to be (201){sub {beta}-Ga{sub 2}}{sub O{sub 3}}//(0001){sub Al{sub 2}}{sub O{sub 3}} and [102]{sub {beta}-Ga{sub 2}}{sub O{sub 3}}//[2110]{sub Al{sub 2}}{sub O{sub 3}} or 102{sub {beta}-Ga{sub 2}}{sub O{sub 3}}//2110{sub Al{sub 2}}{sub O{sub 3}} for the undoped film, and (111){sub {gamma}-Ga{sub 2}}{sub O{sub 3}}//(0001){sub Al{sub 2}}{sub O{sub 3}} and [211]{sub {gamma}-Ga{sub 2}}{sub O{sub 3}}//[2110]{sub Al{sub 2}}{sub O{sub 3}} or [211]{sub {gamma}-Ga{sub 2}}{sub O{sub 3}}//[2110]{sub Al{sub 2}}{sub O{sub 3}} for the Mn-doped film. Mn ions are uniformly dissolved in the film withmore » 7.8 cation % and no detectable precipitates are found. Mn-L{sub 2,3} energy-loss near-edge structure reveals that Mn ions take the valency of 2+, which is consistent with Mn-L{sub 2,3} near edge x-ray absorption results in our previous report.« less

Authors:
; ; ;  [1]
  1. Department of Materials Science and Engineering, Kyoto University, Yoshida, Sakyo, Kyoto 606-8501 (Japan)
Publication Date:
OSTI Identifier:
20982757
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 101; Journal Issue: 6; Other Information: DOI: 10.1063/1.2713349; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION; CRYSTAL STRUCTURE; DOPED MATERIALS; ELECTRON DIFFRACTION; ENERGY BEAM DEPOSITION; ENERGY LOSSES; ENERGY-LOSS SPECTROSCOPY; EPITAXY; FERROMAGNETISM; GALLIUM OXIDES; LASER RADIATION; MANGANESE IONS; MICROSTRUCTURE; PRECIPITATION; PULSED IRRADIATION; SAPPHIRE; SPINELS; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Huang, Rong, Hayashi, Hiroyuki, Oba, Fumiyasu, and Tanaka, Isao. Microstructure of Mn-doped {gamma}-Ga{sub 2}O{sub 3} epitaxial film on sapphire (0001) with room temperature ferromagnetism. United States: N. p., 2007. Web. doi:10.1063/1.2713349.
Huang, Rong, Hayashi, Hiroyuki, Oba, Fumiyasu, & Tanaka, Isao. Microstructure of Mn-doped {gamma}-Ga{sub 2}O{sub 3} epitaxial film on sapphire (0001) with room temperature ferromagnetism. United States. https://doi.org/10.1063/1.2713349
Huang, Rong, Hayashi, Hiroyuki, Oba, Fumiyasu, and Tanaka, Isao. Thu . "Microstructure of Mn-doped {gamma}-Ga{sub 2}O{sub 3} epitaxial film on sapphire (0001) with room temperature ferromagnetism". United States. https://doi.org/10.1063/1.2713349.
@article{osti_20982757,
title = {Microstructure of Mn-doped {gamma}-Ga{sub 2}O{sub 3} epitaxial film on sapphire (0001) with room temperature ferromagnetism},
author = {Huang, Rong and Hayashi, Hiroyuki and Oba, Fumiyasu and Tanaka, Isao},
abstractNote = {Mn-doped Ga{sub 2}O{sub 3} thin film showing room temperature ferromagnetism has been grown on a sapphire (0001) plane by using a pulsed-laser deposition technique. The microstructure of the Mn-doped film is investigated in detail using selected-area electron diffraction, high-resolution transmission electron microscopy (HRTEM), x-ray energy-dispersive spectroscopy, and electron energy-loss spectroscopy, in comparison with an undoped film. Careful diffraction analysis with the [2110]{sub Al{sub 2}}{sub O{sub 3}} and [1010]{sub Al{sub 2}}{sub O{sub 3}} zone axes of the substrates reveals that the Mn-doped film shows the {gamma}-Ga{sub 2}O{sub 3} phase with a defective spinel structure, while the undoped film shows the {beta}-Ga{sub 2}O{sub 3} phase. The orientation relationship between the film and substrate is determined by electron diffraction and HRTEM from the interface region to be (201){sub {beta}-Ga{sub 2}}{sub O{sub 3}}//(0001){sub Al{sub 2}}{sub O{sub 3}} and [102]{sub {beta}-Ga{sub 2}}{sub O{sub 3}}//[2110]{sub Al{sub 2}}{sub O{sub 3}} or 102{sub {beta}-Ga{sub 2}}{sub O{sub 3}}//2110{sub Al{sub 2}}{sub O{sub 3}} for the undoped film, and (111){sub {gamma}-Ga{sub 2}}{sub O{sub 3}}//(0001){sub Al{sub 2}}{sub O{sub 3}} and [211]{sub {gamma}-Ga{sub 2}}{sub O{sub 3}}//[2110]{sub Al{sub 2}}{sub O{sub 3}} or [211]{sub {gamma}-Ga{sub 2}}{sub O{sub 3}}//[2110]{sub Al{sub 2}}{sub O{sub 3}} for the Mn-doped film. Mn ions are uniformly dissolved in the film with 7.8 cation % and no detectable precipitates are found. Mn-L{sub 2,3} energy-loss near-edge structure reveals that Mn ions take the valency of 2+, which is consistent with Mn-L{sub 2,3} near edge x-ray absorption results in our previous report.},
doi = {10.1063/1.2713349},
url = {https://www.osti.gov/biblio/20982757}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 6,
volume = 101,
place = {United States},
year = {2007},
month = {3}
}