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Title: Characteristics of pulsed plasma doping sources for ultrashallow junction formation

Abstract

Plasma doping of semiconductors is being investigated for low energy ion implantation to form ultrashallow junctions. In plasma doping, ions are extracted from a quasicontinuous plasma using a pulsed bias on the substrate. Plasma-based implantation techniques have the potential for higher throughput than those attainable with conventional accelerator beamlines due to the higher current densities possible with plasma sources. In this work, results from a computational investigation of plasma sources for doping of semiconductors will be discussed. An inductively coupled plasma (ICP) was used to generate ions at pressures of a few to tens of millitorr. A pulsed bias up to -20 kV having lengths of tens of microseconds was applied to the substrate to accelerate the ions. Results are presented for Ar/NF{sub 3} gas mixtures which serve as surrogates for the Ar/BF{sub 3} mixtures that would provide boron doping. The consequences of bias voltage waveform, ICP power, operating pressure, and aspect ratio of the reactor on discharge characteristics and ion energy and angular distributions (IEADs) to the substrate will be discussed. The shape of the bias waveform has important consequences on the IEADs not only because of the transit times of the ions but also due to the instabilitiesmore » that may be launched into the plasma. The aspect ratio of the reactor influences the angular uniformity of the IEADs, particularly when using large biases.« less

Authors:
;  [1];  [2]
  1. Department of Chemical and Biomolecular Engineering, University of Illinois, Urbana, Illinois 61801 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
20982750
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 101; Journal Issue: 6; Other Information: DOI: 10.1063/1.2433746; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 36 MATERIALS SCIENCE; ACCELERATORS; ANGULAR DISTRIBUTION; ARGON; ASPECT RATIO; BORON; BORON FLUORIDES; CURRENT DENSITY; ELECTRIC POTENTIAL; ION IMPLANTATION; IONS; MIXTURES; NITROGEN FLUORIDES; PLASMA; PLASMA INSTABILITY; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SUBSTRATES; WAVE FORMS

Citation Formats

Agarwal, Ankur, Kushner, Mark J., and Department of Electrical and Computer Engineering, Iowa State University, 104 Marston Hall, Ames, Iowa 50011-2151. Characteristics of pulsed plasma doping sources for ultrashallow junction formation. United States: N. p., 2007. Web. doi:10.1063/1.2433746.
Agarwal, Ankur, Kushner, Mark J., & Department of Electrical and Computer Engineering, Iowa State University, 104 Marston Hall, Ames, Iowa 50011-2151. Characteristics of pulsed plasma doping sources for ultrashallow junction formation. United States. doi:10.1063/1.2433746.
Agarwal, Ankur, Kushner, Mark J., and Department of Electrical and Computer Engineering, Iowa State University, 104 Marston Hall, Ames, Iowa 50011-2151. Thu . "Characteristics of pulsed plasma doping sources for ultrashallow junction formation". United States. doi:10.1063/1.2433746.
@article{osti_20982750,
title = {Characteristics of pulsed plasma doping sources for ultrashallow junction formation},
author = {Agarwal, Ankur and Kushner, Mark J. and Department of Electrical and Computer Engineering, Iowa State University, 104 Marston Hall, Ames, Iowa 50011-2151},
abstractNote = {Plasma doping of semiconductors is being investigated for low energy ion implantation to form ultrashallow junctions. In plasma doping, ions are extracted from a quasicontinuous plasma using a pulsed bias on the substrate. Plasma-based implantation techniques have the potential for higher throughput than those attainable with conventional accelerator beamlines due to the higher current densities possible with plasma sources. In this work, results from a computational investigation of plasma sources for doping of semiconductors will be discussed. An inductively coupled plasma (ICP) was used to generate ions at pressures of a few to tens of millitorr. A pulsed bias up to -20 kV having lengths of tens of microseconds was applied to the substrate to accelerate the ions. Results are presented for Ar/NF{sub 3} gas mixtures which serve as surrogates for the Ar/BF{sub 3} mixtures that would provide boron doping. The consequences of bias voltage waveform, ICP power, operating pressure, and aspect ratio of the reactor on discharge characteristics and ion energy and angular distributions (IEADs) to the substrate will be discussed. The shape of the bias waveform has important consequences on the IEADs not only because of the transit times of the ions but also due to the instabilities that may be launched into the plasma. The aspect ratio of the reactor influences the angular uniformity of the IEADs, particularly when using large biases.},
doi = {10.1063/1.2433746},
journal = {Journal of Applied Physics},
number = 6,
volume = 101,
place = {United States},
year = {Thu Mar 15 00:00:00 EDT 2007},
month = {Thu Mar 15 00:00:00 EDT 2007}
}