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Title: Quantitative structural characterization of GaN quantum dot ripening using reflection high-energy electron diffraction

Abstract

Reflection high-energy electron diffraction (RHEED) was used to monitor the strain of GaN/AlN quantum dots (QDs) grown by molecular beam epitaxy. Quantitative and absolute values of the in- and out-of-plane strains of the QDs were determined and compared to reference values, obtained by x-ray diffraction measurements. A very good agreement was found between RHEED and x-ray measurements. The growth and thermal ripening of the dots were analyzed. A progressive strain relaxation was observed during the ripening stage, suggesting a morphology evolution of the dots.

Authors:
; ; ; ; ; ;  [1];  [2];  [3]
  1. DRFMC, SP2M, CEA Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France and Universite Joseph Fourier, BP 53, 38041, Grenoble Cedex 9 (France)
  2. (Spain)
  3. (France)
Publication Date:
OSTI Identifier:
20982743
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 101; Journal Issue: 5; Other Information: DOI: 10.1063/1.2422902; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; CRYSTAL GROWTH; ELECTRON DIFFRACTION; EVOLUTION; GALLIUM NITRIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY; QUANTUM DOTS; REFLECTION; RELAXATION; RESIDUAL STRESSES; RIPENING; SEMICONDUCTOR MATERIALS; X-RAY DIFFRACTION

Citation Formats

Coraux, J., Favre-Nicolin, V., Renevier, H., Proietti, M. G., Amstatt, B., Bellet-Amalric, E., Daudin, B., Departamento de Fisica de la Materia Condensada, Instituto de Ciencia de Materiales de Aragon, CSIC-Universidad de Zaragoza, c. Pedro Cerbuna 12, 50009 Zaragoza, and DRFMC, SP2M, CEA Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9. Quantitative structural characterization of GaN quantum dot ripening using reflection high-energy electron diffraction. United States: N. p., 2007. Web. doi:10.1063/1.2422902.
Coraux, J., Favre-Nicolin, V., Renevier, H., Proietti, M. G., Amstatt, B., Bellet-Amalric, E., Daudin, B., Departamento de Fisica de la Materia Condensada, Instituto de Ciencia de Materiales de Aragon, CSIC-Universidad de Zaragoza, c. Pedro Cerbuna 12, 50009 Zaragoza, & DRFMC, SP2M, CEA Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9. Quantitative structural characterization of GaN quantum dot ripening using reflection high-energy electron diffraction. United States. doi:10.1063/1.2422902.
Coraux, J., Favre-Nicolin, V., Renevier, H., Proietti, M. G., Amstatt, B., Bellet-Amalric, E., Daudin, B., Departamento de Fisica de la Materia Condensada, Instituto de Ciencia de Materiales de Aragon, CSIC-Universidad de Zaragoza, c. Pedro Cerbuna 12, 50009 Zaragoza, and DRFMC, SP2M, CEA Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9. Thu . "Quantitative structural characterization of GaN quantum dot ripening using reflection high-energy electron diffraction". United States. doi:10.1063/1.2422902.
@article{osti_20982743,
title = {Quantitative structural characterization of GaN quantum dot ripening using reflection high-energy electron diffraction},
author = {Coraux, J. and Favre-Nicolin, V. and Renevier, H. and Proietti, M. G. and Amstatt, B. and Bellet-Amalric, E. and Daudin, B. and Departamento de Fisica de la Materia Condensada, Instituto de Ciencia de Materiales de Aragon, CSIC-Universidad de Zaragoza, c. Pedro Cerbuna 12, 50009 Zaragoza and DRFMC, SP2M, CEA Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9},
abstractNote = {Reflection high-energy electron diffraction (RHEED) was used to monitor the strain of GaN/AlN quantum dots (QDs) grown by molecular beam epitaxy. Quantitative and absolute values of the in- and out-of-plane strains of the QDs were determined and compared to reference values, obtained by x-ray diffraction measurements. A very good agreement was found between RHEED and x-ray measurements. The growth and thermal ripening of the dots were analyzed. A progressive strain relaxation was observed during the ripening stage, suggesting a morphology evolution of the dots.},
doi = {10.1063/1.2422902},
journal = {Journal of Applied Physics},
number = 5,
volume = 101,
place = {United States},
year = {Thu Mar 01 00:00:00 EST 2007},
month = {Thu Mar 01 00:00:00 EST 2007}
}
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  • The heteroepitaxial growth of Fe films on GaN(0001) by molecular beam epitaxy is monitored in situ by reflection high-energy electron diffraction phi scans. The complex epitaxial orientation-relationship between Fe and GaN can be visualized by these phi scans already at an Fe coverage of two monolayers. By comparing the data to ex situ x-ray phi scans, we show that these measurements even allow a quantitative determination of the in-plane orientation-distribution of the heteroepitaxial film. The orientation-distribution is minimized for a growth temperature of 350 deg. C.
  • Topological insulator (TI) has been one of the focus research themes in condensed matter physics in recent years. Due to the relatively large energy bandgap, Bi{sub 2}Se{sub 3} has been identified as one of the most promising three-dimensional TIs with application potentials. Epitaxial Bi{sub 2}Se{sub 3} by molecular-beam epitaxy has been reported by many groups using different substrates. A common feature is that Bi{sub 2}Se{sub 3} grows readily along the c-axis direction irrespective of the type and condition of the substrate. Because of the weak van der Waals interaction between Bi{sub 2}Se{sub 3} quintuple layers, the grown films are reportedmore » to be strain-free, taking the lattice constant of the bulk crystal. At the very initial stage of Bi{sub 2}Se{sub 3} deposition, however, strain may still exist depending on the substrate. Strain may bring some drastic effects to the properties of the TIs and so achieving strained TIs can be of great fundamental interests as well as practical relevance. In this work, we employ reflection high-energy electron diffraction to follow the lattice constant evolution of Bi{sub 2}Se{sub 3} during initial stage depositions on GaN and graphene, two very different substrates. We reveal that epitaxial Bi{sub 2}Se{sub 3} is tensile strained on GaN but strain-free on graphene. Strain relaxation on GaN is gradual.« less