Prediction of stochastic behavior in differential charging of nanopatterned dielectric surfaces during plasma processing

Journal Article · Thu Feb 15 00:00:00 EST 2007 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2433134· OSTI ID:20982706

Kenney, Jason A; Hwang, Gyeong S ^[1]

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1. Department of Chemical Engineering, The University of Texas, Austin, Texas 78712 (United States)

We investigate differential charging of high aspect ratio dielectric trenches under plasma exposure using a two-dimensional computational model. Rather than considering average fluxes, we track individual ion and electron trajectories within the electric field arising from surface charges on the trench, updating the potentials within the computational domain after each particle. Our results show that, as the trench width shrinks to 100 nm and below, the potentials within the trench oscillate over an ever-wider range. The stochastic charging behavior in turn leads to noticeable changes in the flux and energies of ions passing through the trench.

• OSTI ID: 20982706
• Journal Information: Journal of Applied Physics, Vol. 101, Issue 4; Other Information: DOI: 10.1063/1.2433134; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
36 MATERIALS SCIENCE
ASPECT RATIO
DIELECTRIC MATERIALS
ELECTRIC FIELDS
ELECTRONS
MATHEMATICAL MODELS
NANOSTRUCTURES
PARTICLE TRACKS
PARTICLES
PLASMA
STOCHASTIC PROCESSES
TWO-DIMENSIONAL CALCULATIONS
WALL EFFECTS