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Title: Deviations from Vegard's rule in Al{sub 1-x}In{sub x}N (0001) alloy thin films grown by magnetron sputter epitaxy

Abstract

Al{sub 1-x}In{sub x}N (0001) thin films of the pseudobinary AlN-InN system were grown epitaxially onto (111)-oriented MgO wafers with seed layers of Ti{sub 1-y}Zr{sub y}N by dual direct current magnetron sputtering under ultrahigh vacuum conditions. The relaxed film c-axis lattice parameters determined by x-ray diffraction were studied as a function of composition in the range of 0.07<x<0.82 measured by Rutherford backscattering spectrometry. We find a relative deviation by as much as 37% from the linear dependency described by Vegard's rule for the lattice parameter versus film composition. The highest relative deviations were found at low InN mole fractions, while the largest absolute deviation was found at x=0.63. This shows that Vegard's rule is not directly applicable to determine the compositions in the wurtzite Al{sub 1-x}In{sub x}N system.

Authors:
; ; ; ;  [1];  [2]
  1. Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linkoeping University, SE-581 83 Linkoeping (Sweden)
  2. (FWI), Forschungszentrum Rossendorf e.V. (FZR), P.O. Box 510119-01314 Dresden (Germany)
Publication Date:
OSTI Identifier:
20982703
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 101; Journal Issue: 4; Other Information: DOI: 10.1063/1.2450675; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM ALLOYS; ALUMINIUM NITRIDES; CRYSTAL GROWTH; DEPOSITION; DIRECT CURRENT; EPITAXY; INDIUM ALLOYS; INDIUM NITRIDES; LATTICE PARAMETERS; LAYERS; MAGNESIUM OXIDES; SPUTTERING; THIN FILMS; X-RAY DIFFRACTION

Citation Formats

Seppaenen, T., Hultman, L., Birch, J., Beckers, M., Kreissig, U., and Institute for Ion Beam Physics and Materials Science. Deviations from Vegard's rule in Al{sub 1-x}In{sub x}N (0001) alloy thin films grown by magnetron sputter epitaxy. United States: N. p., 2007. Web. doi:10.1063/1.2450675.
Seppaenen, T., Hultman, L., Birch, J., Beckers, M., Kreissig, U., & Institute for Ion Beam Physics and Materials Science. Deviations from Vegard's rule in Al{sub 1-x}In{sub x}N (0001) alloy thin films grown by magnetron sputter epitaxy. United States. doi:10.1063/1.2450675.
Seppaenen, T., Hultman, L., Birch, J., Beckers, M., Kreissig, U., and Institute for Ion Beam Physics and Materials Science. Thu . "Deviations from Vegard's rule in Al{sub 1-x}In{sub x}N (0001) alloy thin films grown by magnetron sputter epitaxy". United States. doi:10.1063/1.2450675.
@article{osti_20982703,
title = {Deviations from Vegard's rule in Al{sub 1-x}In{sub x}N (0001) alloy thin films grown by magnetron sputter epitaxy},
author = {Seppaenen, T. and Hultman, L. and Birch, J. and Beckers, M. and Kreissig, U. and Institute for Ion Beam Physics and Materials Science},
abstractNote = {Al{sub 1-x}In{sub x}N (0001) thin films of the pseudobinary AlN-InN system were grown epitaxially onto (111)-oriented MgO wafers with seed layers of Ti{sub 1-y}Zr{sub y}N by dual direct current magnetron sputtering under ultrahigh vacuum conditions. The relaxed film c-axis lattice parameters determined by x-ray diffraction were studied as a function of composition in the range of 0.07<x<0.82 measured by Rutherford backscattering spectrometry. We find a relative deviation by as much as 37% from the linear dependency described by Vegard's rule for the lattice parameter versus film composition. The highest relative deviations were found at low InN mole fractions, while the largest absolute deviation was found at x=0.63. This shows that Vegard's rule is not directly applicable to determine the compositions in the wurtzite Al{sub 1-x}In{sub x}N system.},
doi = {10.1063/1.2450675},
journal = {Journal of Applied Physics},
number = 4,
volume = 101,
place = {United States},
year = {Thu Feb 15 00:00:00 EST 2007},
month = {Thu Feb 15 00:00:00 EST 2007}
}