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Title: Crystallization kinetics of ultrathin amorphous Si film induced by Al metal layer under thermal annealing and pulsed laser irradiation

Abstract

The crystallization kinetics of ultrathin a-Si induced by Al under thermal annealing and pulsed laser irradiation has been studied. Under thermal annealing, the crystallization temperature and activation energy for crystallization of a-Si with a thin Al metal layer was reduced to around 340 degree sign C and 3.3 eV, respectively. The reaction exponent was determined to vary from 1.5 to 1.8, corresponding to a crystallization process in which grain growth occurs with nucleation, and the nucleation rate decreases with the progress of grain growth. Under high power pulsed laser irradiation, the crystallization and reamorphization of a-Si were found to take place sequentially in a-Si/Al. The reamorphization of a-Si in contact with a thin Al metal layer can be attributed to the melting of a-Si/Al initiated at the interface, due to the low melting temperature of Si-Al alloy and the rapid solidification that followed. Considering only the crystallization process, the activation energy for crystallization of a-Si induced by Al, estimated to be about 0.22 eV, was nearly an order of magnitude lower than that under thermal annealing. This may be explained by the explosive crystallization of a-Si by mechanical impact with a high power pulsed laser. In the meantime, the reactionmore » exponent, determined to range from 1.9 to 2.2, was slightly higher than that under thermal annealing, indicating that the decrease of nucleation rate with the progress of grain growth during crystallization was slower, and the crystallization process became more nucleation dominant.« less

Authors:
;  [1]
  1. Department of Materials Engineering, National Chung Hsing University, Taichung, Taiwan 40254 (China)
Publication Date:
OSTI Identifier:
20982702
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 101; Journal Issue: 4; Other Information: DOI: 10.1063/1.2654512; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ACTIVATION ENERGY; ALUMINIUM; ALUMINIUM ALLOYS; AMORPHOUS STATE; ANNEALING; CRYSTALLIZATION; EV RANGE 01-10; GRAIN GROWTH; LASER RADIATION; LAYERS; MELTING; MELTING POINTS; NUCLEATION; SEMICONDUCTOR MATERIALS; SILICON ALLOYS; SOLIDIFICATION; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K; THIN FILMS

Citation Formats

Her, Yung-Chiun, and Chen, Chih-Wei. Crystallization kinetics of ultrathin amorphous Si film induced by Al metal layer under thermal annealing and pulsed laser irradiation. United States: N. p., 2007. Web. doi:10.1063/1.2654512.
Her, Yung-Chiun, & Chen, Chih-Wei. Crystallization kinetics of ultrathin amorphous Si film induced by Al metal layer under thermal annealing and pulsed laser irradiation. United States. doi:10.1063/1.2654512.
Her, Yung-Chiun, and Chen, Chih-Wei. Thu . "Crystallization kinetics of ultrathin amorphous Si film induced by Al metal layer under thermal annealing and pulsed laser irradiation". United States. doi:10.1063/1.2654512.
@article{osti_20982702,
title = {Crystallization kinetics of ultrathin amorphous Si film induced by Al metal layer under thermal annealing and pulsed laser irradiation},
author = {Her, Yung-Chiun and Chen, Chih-Wei},
abstractNote = {The crystallization kinetics of ultrathin a-Si induced by Al under thermal annealing and pulsed laser irradiation has been studied. Under thermal annealing, the crystallization temperature and activation energy for crystallization of a-Si with a thin Al metal layer was reduced to around 340 degree sign C and 3.3 eV, respectively. The reaction exponent was determined to vary from 1.5 to 1.8, corresponding to a crystallization process in which grain growth occurs with nucleation, and the nucleation rate decreases with the progress of grain growth. Under high power pulsed laser irradiation, the crystallization and reamorphization of a-Si were found to take place sequentially in a-Si/Al. The reamorphization of a-Si in contact with a thin Al metal layer can be attributed to the melting of a-Si/Al initiated at the interface, due to the low melting temperature of Si-Al alloy and the rapid solidification that followed. Considering only the crystallization process, the activation energy for crystallization of a-Si induced by Al, estimated to be about 0.22 eV, was nearly an order of magnitude lower than that under thermal annealing. This may be explained by the explosive crystallization of a-Si by mechanical impact with a high power pulsed laser. In the meantime, the reaction exponent, determined to range from 1.9 to 2.2, was slightly higher than that under thermal annealing, indicating that the decrease of nucleation rate with the progress of grain growth during crystallization was slower, and the crystallization process became more nucleation dominant.},
doi = {10.1063/1.2654512},
journal = {Journal of Applied Physics},
number = 4,
volume = 101,
place = {United States},
year = {Thu Feb 15 00:00:00 EST 2007},
month = {Thu Feb 15 00:00:00 EST 2007}
}