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Title: Comment on 'Mechanism for the increase of indium-tin-oxide work function by O{sub 2} inductively coupled plasma treatment' [J. Appl. Phys. 95, 586 (2004)]

Abstract

A high work function on indium tin oxide (ITO) surfaces with O{sub 2} inductively coupled plasma (ICP) treatment was obtained in the paper: 'Mechanism for the increase of indium tin oxide work function by O{sub 2} inductively coupled plasma treatment' [Lee et al., J. Appl. Phys. 95, 586 (2004)]. They attributed this to the higher work function of the larger upward band bending and the larger electron affinity of the ITO near the surface by the ICP treatment. In this Comment, we indicate the mistake in their analysis of the observed result by synchrotron radiation photoemission spectroscopy.

Authors:
 [1]
  1. Institute of Photonics, National Changhua University of Education, Changhua 500, Taiwan (China)
Publication Date:
OSTI Identifier:
20982691
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 101; Journal Issue: 3; Other Information: DOI: 10.1063/1.2432301; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AFFINITY; ELECTRON EMISSION; INDIUM OXIDES; PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION; PLASMA; SEMICONDUCTOR MATERIALS; SURFACE TREATMENTS; SYNCHROTRON RADIATION; TIN OXIDES; WORK FUNCTIONS

Citation Formats

Lin, Yow-Jon. Comment on 'Mechanism for the increase of indium-tin-oxide work function by O{sub 2} inductively coupled plasma treatment' [J. Appl. Phys. 95, 586 (2004)]. United States: N. p., 2007. Web. doi:10.1063/1.2432301.
Lin, Yow-Jon. Comment on 'Mechanism for the increase of indium-tin-oxide work function by O{sub 2} inductively coupled plasma treatment' [J. Appl. Phys. 95, 586 (2004)]. United States. doi:10.1063/1.2432301.
Lin, Yow-Jon. Thu . "Comment on 'Mechanism for the increase of indium-tin-oxide work function by O{sub 2} inductively coupled plasma treatment' [J. Appl. Phys. 95, 586 (2004)]". United States. doi:10.1063/1.2432301.
@article{osti_20982691,
title = {Comment on 'Mechanism for the increase of indium-tin-oxide work function by O{sub 2} inductively coupled plasma treatment' [J. Appl. Phys. 95, 586 (2004)]},
author = {Lin, Yow-Jon},
abstractNote = {A high work function on indium tin oxide (ITO) surfaces with O{sub 2} inductively coupled plasma (ICP) treatment was obtained in the paper: 'Mechanism for the increase of indium tin oxide work function by O{sub 2} inductively coupled plasma treatment' [Lee et al., J. Appl. Phys. 95, 586 (2004)]. They attributed this to the higher work function of the larger upward band bending and the larger electron affinity of the ITO near the surface by the ICP treatment. In this Comment, we indicate the mistake in their analysis of the observed result by synchrotron radiation photoemission spectroscopy.},
doi = {10.1063/1.2432301},
journal = {Journal of Applied Physics},
number = 3,
volume = 101,
place = {United States},
year = {Thu Feb 01 00:00:00 EST 2007},
month = {Thu Feb 01 00:00:00 EST 2007}
}
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