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Title: Mechanism of metal-semiconductor transition in electric properties of single-walled carbon nanotubes induced by low-energy electron irradiation

Abstract

Low-energy electron irradiation causes damage in single-walled carbon nanotubes and changes the electric behavior of a nanotube field-effect transistor from metallic to semiconducting at low temperature. The irradiation damage was found to form an energy barrier of several 10 meV in the nanotube channel. We show that the transition behavior can be reasonably explained by the barrier formation and gate-induced band bending.

Authors:
; ; ; ; ;  [1]
  1. NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198 (Japan)
Publication Date:
OSTI Identifier:
20982683
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 101; Journal Issue: 3; Other Information: DOI: 10.1063/1.2434822; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARBON; ELECTRIC CONDUCTIVITY; ELECTRON BEAMS; ELECTRONS; FIELD EFFECT TRANSISTORS; IRRADIATION; NANOTUBES; SEMICONDUCTOR MATERIALS

Citation Formats

Kanzaki, Kenichi, Suzuki, Satoru, Inokawa, Hiroshi, Ono, Yukinori, Vijayaraghavan, Aravind, and Kobayashi, Yoshihiro. Mechanism of metal-semiconductor transition in electric properties of single-walled carbon nanotubes induced by low-energy electron irradiation. United States: N. p., 2007. Web. doi:10.1063/1.2434822.
Kanzaki, Kenichi, Suzuki, Satoru, Inokawa, Hiroshi, Ono, Yukinori, Vijayaraghavan, Aravind, & Kobayashi, Yoshihiro. Mechanism of metal-semiconductor transition in electric properties of single-walled carbon nanotubes induced by low-energy electron irradiation. United States. doi:10.1063/1.2434822.
Kanzaki, Kenichi, Suzuki, Satoru, Inokawa, Hiroshi, Ono, Yukinori, Vijayaraghavan, Aravind, and Kobayashi, Yoshihiro. Thu . "Mechanism of metal-semiconductor transition in electric properties of single-walled carbon nanotubes induced by low-energy electron irradiation". United States. doi:10.1063/1.2434822.
@article{osti_20982683,
title = {Mechanism of metal-semiconductor transition in electric properties of single-walled carbon nanotubes induced by low-energy electron irradiation},
author = {Kanzaki, Kenichi and Suzuki, Satoru and Inokawa, Hiroshi and Ono, Yukinori and Vijayaraghavan, Aravind and Kobayashi, Yoshihiro},
abstractNote = {Low-energy electron irradiation causes damage in single-walled carbon nanotubes and changes the electric behavior of a nanotube field-effect transistor from metallic to semiconducting at low temperature. The irradiation damage was found to form an energy barrier of several 10 meV in the nanotube channel. We show that the transition behavior can be reasonably explained by the barrier formation and gate-induced band bending.},
doi = {10.1063/1.2434822},
journal = {Journal of Applied Physics},
number = 3,
volume = 101,
place = {United States},
year = {Thu Feb 01 00:00:00 EST 2007},
month = {Thu Feb 01 00:00:00 EST 2007}
}