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Title: m-plane GaN layers grown by rf-plasma assisted molecular beam epitaxy with varying Ga/N flux ratios on m-plane 4H-SiC substrates

Abstract

A series of m-plane GaN layers with the Ga beam-equivalent pressure (BEP) as the only varied parameter was grown by rf-plasma assisted molecular beam epitaxy on m-plane 4H-SiC substrates using AlN buffer layers. The smoothest growth surfaces and most complete film coalescence were found for the highest Ga BEP corresponding to the Ga droplet accumulation regime. However, better structural quality as assessed by x-ray rocking curves was observed for growth at a lower Ga BEP value below the droplet limit. The variation of rocking curve widths for planes inclined with respect to the epilayer c axis followed a different trend with Ga BEP than those of reflections parallel to the c axis. The GaN layers were found to exhibit a large residual compressive strain along the a axis.

Authors:
; ; ;  [1]
  1. Department of Electronics Science and Engineering, Kyoto University, Kyo-dai Katsura, Nishikyo-ku, Kyoto 615-8510 (Japan)
Publication Date:
OSTI Identifier:
20982675
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 101; Journal Issue: 3; Other Information: DOI: 10.1063/1.2435806; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; BUFFERS; COALESCENCE; CRYSTAL GROWTH; DROPLETS; GALLIUM NITRIDES; LAYERS; MOLECULAR BEAM EPITAXY; NEUTRON DIFFRACTION; PLASMA; RESIDUAL STRESSES; SEMICONDUCTOR MATERIALS; SUBSTRATES; THIN FILMS; X-RAY DIFFRACTION

Citation Formats

Armitage, R., Horita, M., Suda, J., and Kimoto, T. m-plane GaN layers grown by rf-plasma assisted molecular beam epitaxy with varying Ga/N flux ratios on m-plane 4H-SiC substrates. United States: N. p., 2007. Web. doi:10.1063/1.2435806.
Armitage, R., Horita, M., Suda, J., & Kimoto, T. m-plane GaN layers grown by rf-plasma assisted molecular beam epitaxy with varying Ga/N flux ratios on m-plane 4H-SiC substrates. United States. doi:10.1063/1.2435806.
Armitage, R., Horita, M., Suda, J., and Kimoto, T. Thu . "m-plane GaN layers grown by rf-plasma assisted molecular beam epitaxy with varying Ga/N flux ratios on m-plane 4H-SiC substrates". United States. doi:10.1063/1.2435806.
@article{osti_20982675,
title = {m-plane GaN layers grown by rf-plasma assisted molecular beam epitaxy with varying Ga/N flux ratios on m-plane 4H-SiC substrates},
author = {Armitage, R. and Horita, M. and Suda, J. and Kimoto, T.},
abstractNote = {A series of m-plane GaN layers with the Ga beam-equivalent pressure (BEP) as the only varied parameter was grown by rf-plasma assisted molecular beam epitaxy on m-plane 4H-SiC substrates using AlN buffer layers. The smoothest growth surfaces and most complete film coalescence were found for the highest Ga BEP corresponding to the Ga droplet accumulation regime. However, better structural quality as assessed by x-ray rocking curves was observed for growth at a lower Ga BEP value below the droplet limit. The variation of rocking curve widths for planes inclined with respect to the epilayer c axis followed a different trend with Ga BEP than those of reflections parallel to the c axis. The GaN layers were found to exhibit a large residual compressive strain along the a axis.},
doi = {10.1063/1.2435806},
journal = {Journal of Applied Physics},
number = 3,
volume = 101,
place = {United States},
year = {Thu Feb 01 00:00:00 EST 2007},
month = {Thu Feb 01 00:00:00 EST 2007}
}