Surface chemistry and preferential crystal orientation on the H and Cl terminated silicon surface
- Department of Functional Materials Science, The Graduate School of Science and Technology, Saitama University, 255 Shimo-Okubo, Sakura-ku, Saitama 338-8570 (Japan)
Surface chemistry and determining factors of the preferential crystal orientation are discussed through the deposition studies on hydrogenated chlorinated crystalline silicon films by rf plasma-enhanced chemical vapor deposition of a dichlorosilane, SiH{sub 2}Cl{sub 2}, and H{sub 2} mixture. The growth of randomly oriented crystal Si films occurred from the initial growth stage. On the other hand, the incubation layer of amorphous Si was formed in the initial stage, and subsequently, the growth of (220) preferred crystal orientation proceeded. They are determined by the thermal abstraction of H from the growing surface at substrate temperature above 350 degree sign C. Higher degree of Cl termination was effective in suppressing the oxygen incorporation into the Si network, although it did not contribute directly to the preferred crystal orientation. The insertion of atomic hydrogen to the Si-Si back bond in the subsurface region promoted the SiHCl{sub x} complex formation, which was the most possible nucleation site for promoting the (220) preferential crystal orientation.
- OSTI ID:
- 20982674
- Journal Information:
- Journal of Applied Physics, Vol. 101, Issue 3; Other Information: DOI: 10.1063/1.2434826; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Studies of the gas-phase reactive intermediates formed by heterogeneous processes in chlorosilane chemical vapor deposition using photoelectron spectroscopy and mass spectrometry
High rates and very low temperature fabrication of polycrystalline silicon from fluorinated source gas and their transport properties