skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Surface chemistry and preferential crystal orientation on the H and Cl terminated silicon surface

Abstract

Surface chemistry and determining factors of the preferential crystal orientation are discussed through the deposition studies on hydrogenated chlorinated crystalline silicon films by rf plasma-enhanced chemical vapor deposition of a dichlorosilane, SiH{sub 2}Cl{sub 2}, and H{sub 2} mixture. The growth of randomly oriented crystal Si films occurred from the initial growth stage. On the other hand, the incubation layer of amorphous Si was formed in the initial stage, and subsequently, the growth of (220) preferred crystal orientation proceeded. They are determined by the thermal abstraction of H from the growing surface at substrate temperature above 350 degree sign C. Higher degree of Cl termination was effective in suppressing the oxygen incorporation into the Si network, although it did not contribute directly to the preferred crystal orientation. The insertion of atomic hydrogen to the Si-Si back bond in the subsurface region promoted the SiHCl{sub x} complex formation, which was the most possible nucleation site for promoting the (220) preferential crystal orientation.

Authors:
; ; ; ;  [1];  [2]
  1. Department of Functional Materials Science, The Graduate School of Science and Technology, Saitama University, 255 Shimo-Okubo, Sakura-ku, Saitama 338-8570 (Japan)
  2. (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-0198 (Japan)
Publication Date:
OSTI Identifier:
20982674
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 101; Journal Issue: 3; Other Information: DOI: 10.1063/1.2434826; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHEMICAL VAPOR DEPOSITION; CHLORINE; COATINGS; CRYSTAL GROWTH; CRYSTALS; GRAIN ORIENTATION; HYDROGEN; HYDROGENATION; LAYERS; MIXTURES; NUCLEATION; OXYGEN; PLASMA; SEMICONDUCTOR MATERIALS; SILANES; SILICON; SUBSTRATES; TEXTURE; THIN FILMS

Citation Formats

Shirai, H., Saito, T., Li, Y., Matsui, H., Kobayashi, T., and The Institute of Physics and Chemical Research. Surface chemistry and preferential crystal orientation on the H and Cl terminated silicon surface. United States: N. p., 2007. Web. doi:10.1063/1.2434826.
Shirai, H., Saito, T., Li, Y., Matsui, H., Kobayashi, T., & The Institute of Physics and Chemical Research. Surface chemistry and preferential crystal orientation on the H and Cl terminated silicon surface. United States. doi:10.1063/1.2434826.
Shirai, H., Saito, T., Li, Y., Matsui, H., Kobayashi, T., and The Institute of Physics and Chemical Research. Thu . "Surface chemistry and preferential crystal orientation on the H and Cl terminated silicon surface". United States. doi:10.1063/1.2434826.
@article{osti_20982674,
title = {Surface chemistry and preferential crystal orientation on the H and Cl terminated silicon surface},
author = {Shirai, H. and Saito, T. and Li, Y. and Matsui, H. and Kobayashi, T. and The Institute of Physics and Chemical Research},
abstractNote = {Surface chemistry and determining factors of the preferential crystal orientation are discussed through the deposition studies on hydrogenated chlorinated crystalline silicon films by rf plasma-enhanced chemical vapor deposition of a dichlorosilane, SiH{sub 2}Cl{sub 2}, and H{sub 2} mixture. The growth of randomly oriented crystal Si films occurred from the initial growth stage. On the other hand, the incubation layer of amorphous Si was formed in the initial stage, and subsequently, the growth of (220) preferred crystal orientation proceeded. They are determined by the thermal abstraction of H from the growing surface at substrate temperature above 350 degree sign C. Higher degree of Cl termination was effective in suppressing the oxygen incorporation into the Si network, although it did not contribute directly to the preferred crystal orientation. The insertion of atomic hydrogen to the Si-Si back bond in the subsurface region promoted the SiHCl{sub x} complex formation, which was the most possible nucleation site for promoting the (220) preferential crystal orientation.},
doi = {10.1063/1.2434826},
journal = {Journal of Applied Physics},
number = 3,
volume = 101,
place = {United States},
year = {Thu Feb 01 00:00:00 EST 2007},
month = {Thu Feb 01 00:00:00 EST 2007}
}