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Title: Synthesis of cubic boron nitride films with mean ion energies of a few eV

Abstract

The lowest threshold energy of ion bombardment for cubic boron nitride (cBN) film deposition is presented. cBN films are prepared on positively biased Si (100) substrates from boron trifluoride (BF{sub 3}) gas in the high-density source region of an inductively coupled plasma with mean ion impact energies from 45 down to a few eV or less. The great decrease in the threshold ion energy is mainly attributed to specific chemical effects of fluorine as well as high ion-to-boron flux ratios. The results show evidence for the existence of a way to deposit cBN films through quasistatic chemical processes under ultralow-energy ion impact.

Authors:
; ; ;  [1];  [2];  [2];  [2]
  1. Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580, Japan and Department of Engineering, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0FA (United Kingdom)
  2. (Japan)
Publication Date:
OSTI Identifier:
20982662
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 101; Journal Issue: 3; Other Information: DOI: 10.1063/1.2431401; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BORON; BORON FLUORIDES; BORON NITRIDES; CRYSTAL GROWTH; DEPOSITION; DEPOSITS; EV RANGE 01-10; FLUORINE; ION BEAMS; PLASMA; SUBSTRATES; SYNTHESIS; THIN FILMS; THRESHOLD ENERGY

Citation Formats

Teii, Kungen, Yamao, Ryota, Yamamura, Toshifumi, Matsumoto, Seiichiro, Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580, Advanced Materials Laboratory, National Institute for Inorganic Materials, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, and Ceramic Forum Co. Ltd., 1-6-6 Taitoh, Taitoh-ku, Tokyo 110-0016. Synthesis of cubic boron nitride films with mean ion energies of a few eV. United States: N. p., 2007. Web. doi:10.1063/1.2431401.
Teii, Kungen, Yamao, Ryota, Yamamura, Toshifumi, Matsumoto, Seiichiro, Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580, Advanced Materials Laboratory, National Institute for Inorganic Materials, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, & Ceramic Forum Co. Ltd., 1-6-6 Taitoh, Taitoh-ku, Tokyo 110-0016. Synthesis of cubic boron nitride films with mean ion energies of a few eV. United States. doi:10.1063/1.2431401.
Teii, Kungen, Yamao, Ryota, Yamamura, Toshifumi, Matsumoto, Seiichiro, Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580, Advanced Materials Laboratory, National Institute for Inorganic Materials, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, and Ceramic Forum Co. Ltd., 1-6-6 Taitoh, Taitoh-ku, Tokyo 110-0016. Thu . "Synthesis of cubic boron nitride films with mean ion energies of a few eV". United States. doi:10.1063/1.2431401.
@article{osti_20982662,
title = {Synthesis of cubic boron nitride films with mean ion energies of a few eV},
author = {Teii, Kungen and Yamao, Ryota and Yamamura, Toshifumi and Matsumoto, Seiichiro and Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580 and Advanced Materials Laboratory, National Institute for Inorganic Materials, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 and Ceramic Forum Co. Ltd., 1-6-6 Taitoh, Taitoh-ku, Tokyo 110-0016},
abstractNote = {The lowest threshold energy of ion bombardment for cubic boron nitride (cBN) film deposition is presented. cBN films are prepared on positively biased Si (100) substrates from boron trifluoride (BF{sub 3}) gas in the high-density source region of an inductively coupled plasma with mean ion impact energies from 45 down to a few eV or less. The great decrease in the threshold ion energy is mainly attributed to specific chemical effects of fluorine as well as high ion-to-boron flux ratios. The results show evidence for the existence of a way to deposit cBN films through quasistatic chemical processes under ultralow-energy ion impact.},
doi = {10.1063/1.2431401},
journal = {Journal of Applied Physics},
number = 3,
volume = 101,
place = {United States},
year = {Thu Feb 01 00:00:00 EST 2007},
month = {Thu Feb 01 00:00:00 EST 2007}
}