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Title: The effect of low-energy-ion irradiation on photoluminescence of porous silicon

Abstract

Porous silicon (PS) was irradiated by low-energy (800 eV) nitrogen or argon ions. The photoluminescence (PL) properties changed significantly after irradiation, namely, PL was first quenched and then recovered as the postirradiated PS stored in air. X-ray photoelectron spectroscopy and Fourier transforms infrared spectroscopy results indicate that the Si-N bonds were formed during low-energy-nitrogen-ion irradiation, while Raman scattering spectroscopy suggests the crystal structure of PS did not change during ion irradiation. The PL quenching is due to the defects created by ion irradiation, whereas the PL recovery originates from the oxidation of Si-H back bonds and the formation of radiative recombination centers; the Si-N bonds are helpful to obtain high PL intensity.

Authors:
; ; ;  [1]
  1. School of Materials Science and Engineering, Tianjin University, Tianjin 300072 (China)
Publication Date:
OSTI Identifier:
20982654
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 101; Journal Issue: 2; Other Information: DOI: 10.1063/1.2422795; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AIR; ARGON IONS; CRYSTAL STRUCTURE; EV RANGE 100-1000; FOURIER TRANSFORM SPECTROMETERS; INFRARED SPECTRA; ION BEAMS; IRRADIATION; NITROGEN; NITROGEN IONS; OXIDATION; PHOTOLUMINESCENCE; POROUS MATERIALS; QUENCHING; RAMAN EFFECT; RAMAN SPECTRA; RECOMBINATION; SEMICONDUCTOR MATERIALS; SILICON; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Zhao, N. Q., Jin, Y., Du, X. W., and Fu, Y. S. The effect of low-energy-ion irradiation on photoluminescence of porous silicon. United States: N. p., 2007. Web. doi:10.1063/1.2422795.
Zhao, N. Q., Jin, Y., Du, X. W., & Fu, Y. S. The effect of low-energy-ion irradiation on photoluminescence of porous silicon. United States. doi:10.1063/1.2422795.
Zhao, N. Q., Jin, Y., Du, X. W., and Fu, Y. S. Mon . "The effect of low-energy-ion irradiation on photoluminescence of porous silicon". United States. doi:10.1063/1.2422795.
@article{osti_20982654,
title = {The effect of low-energy-ion irradiation on photoluminescence of porous silicon},
author = {Zhao, N. Q. and Jin, Y. and Du, X. W. and Fu, Y. S.},
abstractNote = {Porous silicon (PS) was irradiated by low-energy (800 eV) nitrogen or argon ions. The photoluminescence (PL) properties changed significantly after irradiation, namely, PL was first quenched and then recovered as the postirradiated PS stored in air. X-ray photoelectron spectroscopy and Fourier transforms infrared spectroscopy results indicate that the Si-N bonds were formed during low-energy-nitrogen-ion irradiation, while Raman scattering spectroscopy suggests the crystal structure of PS did not change during ion irradiation. The PL quenching is due to the defects created by ion irradiation, whereas the PL recovery originates from the oxidation of Si-H back bonds and the formation of radiative recombination centers; the Si-N bonds are helpful to obtain high PL intensity.},
doi = {10.1063/1.2422795},
journal = {Journal of Applied Physics},
number = 2,
volume = 101,
place = {United States},
year = {Mon Jan 15 00:00:00 EST 2007},
month = {Mon Jan 15 00:00:00 EST 2007}
}