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Title: Radiation properties in electron waveguides

Abstract

We study the radiation properties in electron waveguide structure with multistep discontinuities and soft wall lateral confinement. Radiation mechanism and conditions are examined by numerical simulation of dispersion relations and transport properties. The study of geometry variations shows its significant impact on the radiation intensity and direction. In particular, the periodic corrugation structure exhibits strong directional radiation. This interesting feature may be useful to design a nanoscale transmitter, a communication device for future nanoscale system.

Authors:
;  [1]
  1. School of Electrical Engineering and Computer Science, University of Central Florida, Orlando, Florida 32816 (United States)
Publication Date:
OSTI Identifier:
20982645
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 101; Journal Issue: 2; Other Information: DOI: 10.1063/1.2422900; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DISPERSION RELATIONS; ELECTRONS; GEOMETRY; NANOSTRUCTURES; PERIODICITY; PHYSICAL RADIATION EFFECTS; SIMULATION; WAVEGUIDES

Citation Formats

Chen, Yupeng, and Wu, Thomas X. Radiation properties in electron waveguides. United States: N. p., 2007. Web. doi:10.1063/1.2422900.
Chen, Yupeng, & Wu, Thomas X. Radiation properties in electron waveguides. United States. doi:10.1063/1.2422900.
Chen, Yupeng, and Wu, Thomas X. Mon . "Radiation properties in electron waveguides". United States. doi:10.1063/1.2422900.
@article{osti_20982645,
title = {Radiation properties in electron waveguides},
author = {Chen, Yupeng and Wu, Thomas X.},
abstractNote = {We study the radiation properties in electron waveguide structure with multistep discontinuities and soft wall lateral confinement. Radiation mechanism and conditions are examined by numerical simulation of dispersion relations and transport properties. The study of geometry variations shows its significant impact on the radiation intensity and direction. In particular, the periodic corrugation structure exhibits strong directional radiation. This interesting feature may be useful to design a nanoscale transmitter, a communication device for future nanoscale system.},
doi = {10.1063/1.2422900},
journal = {Journal of Applied Physics},
number = 2,
volume = 101,
place = {United States},
year = {Mon Jan 15 00:00:00 EST 2007},
month = {Mon Jan 15 00:00:00 EST 2007}
}
  • The authors show that the S-matrix for electrons propagating in a waveguide has different statistical properties depending on whether the waveguide cavity shape gives rise to chaotic or integrable behavior classically. They obtain distributions of energy level spacings for integrable and chaotic billiards shaped like the waveguide cavity. They also obtain distributions for Wigner delay times and resonance widths for the waveguide, for integrable and chaotic cavity geometries. The results, obtained by direct numerical calculation of the electron wave function, are consistent with the predictions of random matrix theory.
  • A systematic analysis of how CH{sub 4}/H{sub 2} based reactive ion etching affects the optical and electro-optical properties of GaInAs/InP multiple quantum well pin diode strip-loaded waveguides is reported. The study includes measurements of waveguiding properties, optical losses and electro-optical phase modulation as function of etch depth, radio-frequency (rf) power, pressure, and the CH{sub 4} content in the etch process. It is found that the optical losses of the waveguides are most sensitive to the etching conditions, in particular the rf power. As the rf-power density was varied from 0.27 to 1.09 W/cm{sup 2}, the optical losses increased from 6.8more » to 19.6 dB/cm. The waveguiding and electro-optical properties were found to be much less sensitive to the etching parameters. For a 5-{mu}m-wide waveguide, the full width half-maximum of the optical mode is typically 5 {mu}m and the average voltage needed to produce a {pi} phase shift is 4 V corresponding to a modulation response of 15{degrees}/V mm. 23 refs., 7 figs., 1 tab.« less