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Title: Chemical analysis of HfO{sub 2}/Si (100) film systems exposed to NH{sub 3} thermal processing

Abstract

Nitrogen incorporation in HfO{sub 2}/SiO{sub 2} films utilized as high-k gate dielectric layers in advanced metal-oxide-semiconductor field effect transistors has been investigated. Thin HfO{sub 2} blanket films deposited by atomic layer deposition on either SiO{sub 2} or NH{sub 3} treated Si (100) substrates have been subjected to NH{sub 3} and N{sub 2} anneal processing. Several high resolution techniques including electron microscopy with electron energy loss spectra, grazing incidence x-ray diffraction, and synchrotron x-ray photoelectron spectroscopy have been utilized to elucidate chemical composition and crystalline structure differences between samples annealed in NH{sub 3} and N{sub 2} ambients as a function of temperature. Depth profiling of core level binding energy spectra has been obtained by using variable kinetic energy x-ray photoelectron spectroscopy with tunable photon energy. An 'interface effect' characterized by a shift of the Si{sup 4+} feature to lower binding energy at the HfO{sub 2}/SiO{sub 2} interface has been detected in the Si 1s spectra; however, no corresponding chemical state change has been observed in the Hf 4f spectra acquired over a broad range of electron take-off angles and surface sensitivities. The Si 2p spectra indicate Si-N bond formation beneath the HfO{sub 2} layer in the samples exposed to NH{sub 3}more » anneal. The NH{sub 3} anneal ambient is shown to produce a metastable Hf-N bond component corresponding to temperature driven dissociation kinetics. These findings are consistent with elemental profiles across the HfO{sub 2}/Si(100) interface determined by electron energy loss spectroscopy measurements. X-ray diffraction measurements on similarly treated films identify the structural changes resulting from N incorporation into the HfO{sub 2} films.« less

Authors:
; ; ; ; ; ; ;  [1];  [2];  [2];  [2]
  1. Front End Process Division, SEMATECH, 2706 Montopolis Drive, Austin, Texas 78741-6499 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
20982643
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 101; Journal Issue: 2; Other Information: DOI: 10.1063/1.2422746; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AMMONIA; ANNEALING; BINDING ENERGY; CHEMICAL ANALYSIS; CHEMICAL BONDS; CRYSTAL STRUCTURE; DEPOSITION; DISSOCIATION; ELECTRON MICROSCOPY; ENERGY-LOSS SPECTROSCOPY; HAFNIUM OXIDES; MOSFET; NITROGEN; PHOTONS; SILICON IONS; SILICON OXIDES; TEMPERATURE DEPENDENCE; THIN FILMS; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Lysaght, Patrick S., Barnett, Joel, Bersuker, Gennadi I., Woicik, Joseph C., Fischer, Daniel A., Foran, Brendan, Tseng, Hsing-Huang, Jammy, Raj, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, Physical Characterization Laboratory, Advanced Technology Development Facility, 2706 Montopolis Drive, Austin, Texas 78741-6499, and Front End Process Division, SEMATECH, 2706 Montopolis Drive, Austin, Texas 78741-6499. Chemical analysis of HfO{sub 2}/Si (100) film systems exposed to NH{sub 3} thermal processing. United States: N. p., 2007. Web. doi:10.1063/1.2422746.
Lysaght, Patrick S., Barnett, Joel, Bersuker, Gennadi I., Woicik, Joseph C., Fischer, Daniel A., Foran, Brendan, Tseng, Hsing-Huang, Jammy, Raj, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, Physical Characterization Laboratory, Advanced Technology Development Facility, 2706 Montopolis Drive, Austin, Texas 78741-6499, & Front End Process Division, SEMATECH, 2706 Montopolis Drive, Austin, Texas 78741-6499. Chemical analysis of HfO{sub 2}/Si (100) film systems exposed to NH{sub 3} thermal processing. United States. doi:10.1063/1.2422746.
Lysaght, Patrick S., Barnett, Joel, Bersuker, Gennadi I., Woicik, Joseph C., Fischer, Daniel A., Foran, Brendan, Tseng, Hsing-Huang, Jammy, Raj, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, Physical Characterization Laboratory, Advanced Technology Development Facility, 2706 Montopolis Drive, Austin, Texas 78741-6499, and Front End Process Division, SEMATECH, 2706 Montopolis Drive, Austin, Texas 78741-6499. Mon . "Chemical analysis of HfO{sub 2}/Si (100) film systems exposed to NH{sub 3} thermal processing". United States. doi:10.1063/1.2422746.
@article{osti_20982643,
title = {Chemical analysis of HfO{sub 2}/Si (100) film systems exposed to NH{sub 3} thermal processing},
author = {Lysaght, Patrick S. and Barnett, Joel and Bersuker, Gennadi I. and Woicik, Joseph C. and Fischer, Daniel A. and Foran, Brendan and Tseng, Hsing-Huang and Jammy, Raj and National Institute of Standards and Technology, Gaithersburg, Maryland 20899 and Physical Characterization Laboratory, Advanced Technology Development Facility, 2706 Montopolis Drive, Austin, Texas 78741-6499 and Front End Process Division, SEMATECH, 2706 Montopolis Drive, Austin, Texas 78741-6499},
abstractNote = {Nitrogen incorporation in HfO{sub 2}/SiO{sub 2} films utilized as high-k gate dielectric layers in advanced metal-oxide-semiconductor field effect transistors has been investigated. Thin HfO{sub 2} blanket films deposited by atomic layer deposition on either SiO{sub 2} or NH{sub 3} treated Si (100) substrates have been subjected to NH{sub 3} and N{sub 2} anneal processing. Several high resolution techniques including electron microscopy with electron energy loss spectra, grazing incidence x-ray diffraction, and synchrotron x-ray photoelectron spectroscopy have been utilized to elucidate chemical composition and crystalline structure differences between samples annealed in NH{sub 3} and N{sub 2} ambients as a function of temperature. Depth profiling of core level binding energy spectra has been obtained by using variable kinetic energy x-ray photoelectron spectroscopy with tunable photon energy. An 'interface effect' characterized by a shift of the Si{sup 4+} feature to lower binding energy at the HfO{sub 2}/SiO{sub 2} interface has been detected in the Si 1s spectra; however, no corresponding chemical state change has been observed in the Hf 4f spectra acquired over a broad range of electron take-off angles and surface sensitivities. The Si 2p spectra indicate Si-N bond formation beneath the HfO{sub 2} layer in the samples exposed to NH{sub 3} anneal. The NH{sub 3} anneal ambient is shown to produce a metastable Hf-N bond component corresponding to temperature driven dissociation kinetics. These findings are consistent with elemental profiles across the HfO{sub 2}/Si(100) interface determined by electron energy loss spectroscopy measurements. X-ray diffraction measurements on similarly treated films identify the structural changes resulting from N incorporation into the HfO{sub 2} films.},
doi = {10.1063/1.2422746},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 2,
volume = 101,
place = {United States},
year = {2007},
month = {1}
}