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Title: The comparison of the growth models of silicon nitride ultrathin films fabricated using atmospheric pressure plasma and radio frequency plasma

Abstract

The reaction process model during initial nitridation of Si (111) using atmospheric pressure plasma source was constructed and it was compared to that using a radio frequency plasma source. In atmospheric pressure plasma, emission lines from the N{sub 2} second positive system were dominantly observed. By exposing the atmospheric pressure plasma to Si substrate at the temperature ranging from 25 to 500 degree sign C, silicon nitride films with a thickness below 1.8 nm were formed. In order to study the nitridation process, the changes in the film thickness against the substrate temperature and nitridation time were systematically studied at a pressure ranging from 50 to 700 Torr. The film thickness increases with increasing the nitridation pressure below 400 Torr and it saturates above 500 Torr. It was completely regardless of the substrate temperature. From the time dependence of the film thickness at various nitridation pressures, it was revealed that these experimental results were well fitted to a Langmuir-type adsorption model. In the case of nitridation using atmospheric pressure (AP) plasma, molecular species play an important role for nitridation without thermal diffusion. The difference of silicon nitride films fabricated using AP plasma and rf plasma originates from the difference inmore » the active species.« less

Authors:
; ; ; ; ;  [1];  [2]
  1. Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Sakai, Osaka 599-8531 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
20982633
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 101; Journal Issue: 2; Other Information: DOI: 10.1063/1.2424501; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ADSORPTION; ATMOSPHERIC PRESSURE; COMPARATIVE EVALUATIONS; CRYSTAL GROWTH; CRYSTAL MODELS; DEPOSITION; NITRIDATION; PLASMA; RADIOWAVE RADIATION; SEMICONDUCTOR MATERIALS; SILICON NITRIDES; SUBSTRATES; THERMAL DIFFUSION; THICKNESS; THIN FILMS; TIME DEPENDENCE

Citation Formats

Nakae, Mari, Hayakawa, Ryoma, Yoshimura, Takeshi, Fujimura, Norifumi, Kunugi, Shunsuke, Uehara, Tsuyoshi, and Sekisui Chemical Co., Ltd., 32 Wadai, Tsukuba, Ibaraki 300-4292. The comparison of the growth models of silicon nitride ultrathin films fabricated using atmospheric pressure plasma and radio frequency plasma. United States: N. p., 2007. Web. doi:10.1063/1.2424501.
Nakae, Mari, Hayakawa, Ryoma, Yoshimura, Takeshi, Fujimura, Norifumi, Kunugi, Shunsuke, Uehara, Tsuyoshi, & Sekisui Chemical Co., Ltd., 32 Wadai, Tsukuba, Ibaraki 300-4292. The comparison of the growth models of silicon nitride ultrathin films fabricated using atmospheric pressure plasma and radio frequency plasma. United States. doi:10.1063/1.2424501.
Nakae, Mari, Hayakawa, Ryoma, Yoshimura, Takeshi, Fujimura, Norifumi, Kunugi, Shunsuke, Uehara, Tsuyoshi, and Sekisui Chemical Co., Ltd., 32 Wadai, Tsukuba, Ibaraki 300-4292. Mon . "The comparison of the growth models of silicon nitride ultrathin films fabricated using atmospheric pressure plasma and radio frequency plasma". United States. doi:10.1063/1.2424501.
@article{osti_20982633,
title = {The comparison of the growth models of silicon nitride ultrathin films fabricated using atmospheric pressure plasma and radio frequency plasma},
author = {Nakae, Mari and Hayakawa, Ryoma and Yoshimura, Takeshi and Fujimura, Norifumi and Kunugi, Shunsuke and Uehara, Tsuyoshi and Sekisui Chemical Co., Ltd., 32 Wadai, Tsukuba, Ibaraki 300-4292},
abstractNote = {The reaction process model during initial nitridation of Si (111) using atmospheric pressure plasma source was constructed and it was compared to that using a radio frequency plasma source. In atmospheric pressure plasma, emission lines from the N{sub 2} second positive system were dominantly observed. By exposing the atmospheric pressure plasma to Si substrate at the temperature ranging from 25 to 500 degree sign C, silicon nitride films with a thickness below 1.8 nm were formed. In order to study the nitridation process, the changes in the film thickness against the substrate temperature and nitridation time were systematically studied at a pressure ranging from 50 to 700 Torr. The film thickness increases with increasing the nitridation pressure below 400 Torr and it saturates above 500 Torr. It was completely regardless of the substrate temperature. From the time dependence of the film thickness at various nitridation pressures, it was revealed that these experimental results were well fitted to a Langmuir-type adsorption model. In the case of nitridation using atmospheric pressure (AP) plasma, molecular species play an important role for nitridation without thermal diffusion. The difference of silicon nitride films fabricated using AP plasma and rf plasma originates from the difference in the active species.},
doi = {10.1063/1.2424501},
journal = {Journal of Applied Physics},
number = 2,
volume = 101,
place = {United States},
year = {Mon Jan 15 00:00:00 EST 2007},
month = {Mon Jan 15 00:00:00 EST 2007}
}