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Title: Correlation of gas-phase composition with film properties in the plasma-enhanced chemical vapor deposition of hydrogenated amorphous carbon nitride films

Abstract

Hydrogenated amorphous carbon nitride (a-C:N:H) films were synthesized from CH{sub 4}/N{sub 2}, C{sub 2}H{sub 4}/N{sub 2}, and C{sub 2}H{sub 2}/N{sub 2} gas mixtures using inductively coupled rf plasmas. These deposition systems were characterized by means of optical emission spectroscopy and mass spectrometry (MS). The effects of varying the nitrogen partial pressure on film growth and film properties were investigated, and experimental results indicate that the hydrocarbon species produced in the gas phase contribute directly to film growth. Although the CN radical is formed in the mixed gas systems, it does not appear to be a factor in controlling the rate of film deposition. The nature and energy of the ions in these systems were explored with MS. No clear dependence of ion energy on mass or plasma conditions was observed. Although films formed in the methane and ethylene systems were relatively smooth, a-C:N:H films prepared from acetylene-nitrogen plasmas had comparatively rough surfaces, most likely as a result of the strong gas-phase polymerization process produced by the ion-molecule reactions, C{sub n}H{sub y}{sup +}+C{sub 2}H{sub 2}{yields}C{sub (n+2)}H{sub y}{sup +}+H{sub 2} (n>1, y=1-3). Correlations between the a-C:N:H growth processes and the gas-phase plasma diagnostic data are discussed.

Authors:
; ;  [1]
  1. Department of Chemistry, Colorado State University, Fort Collins, Colorado 80523-1872 (United States)
Publication Date:
OSTI Identifier:
20982627
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 101; Journal Issue: 2; Other Information: DOI: 10.1063/1.2424402; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ACETYLENE; AMORPHOUS STATE; CARBON NITRIDES; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; EMISSION SPECTROSCOPY; ETHYLENE; HYDROGEN; ION-MOLECULE COLLISIONS; MASS; MASS SPECTROSCOPY; METHANE; MIXTURES; NITROGEN; PARTIAL PRESSURE; PHOTOLUMINESCENCE; PLASMA; POLYMERIZATION; RADICALS; THIN FILMS

Citation Formats

Liu, Dongping, Zhou, Jie, and Fisher, Ellen R. Correlation of gas-phase composition with film properties in the plasma-enhanced chemical vapor deposition of hydrogenated amorphous carbon nitride films. United States: N. p., 2007. Web. doi:10.1063/1.2424402.
Liu, Dongping, Zhou, Jie, & Fisher, Ellen R. Correlation of gas-phase composition with film properties in the plasma-enhanced chemical vapor deposition of hydrogenated amorphous carbon nitride films. United States. doi:10.1063/1.2424402.
Liu, Dongping, Zhou, Jie, and Fisher, Ellen R. Mon . "Correlation of gas-phase composition with film properties in the plasma-enhanced chemical vapor deposition of hydrogenated amorphous carbon nitride films". United States. doi:10.1063/1.2424402.
@article{osti_20982627,
title = {Correlation of gas-phase composition with film properties in the plasma-enhanced chemical vapor deposition of hydrogenated amorphous carbon nitride films},
author = {Liu, Dongping and Zhou, Jie and Fisher, Ellen R.},
abstractNote = {Hydrogenated amorphous carbon nitride (a-C:N:H) films were synthesized from CH{sub 4}/N{sub 2}, C{sub 2}H{sub 4}/N{sub 2}, and C{sub 2}H{sub 2}/N{sub 2} gas mixtures using inductively coupled rf plasmas. These deposition systems were characterized by means of optical emission spectroscopy and mass spectrometry (MS). The effects of varying the nitrogen partial pressure on film growth and film properties were investigated, and experimental results indicate that the hydrocarbon species produced in the gas phase contribute directly to film growth. Although the CN radical is formed in the mixed gas systems, it does not appear to be a factor in controlling the rate of film deposition. The nature and energy of the ions in these systems were explored with MS. No clear dependence of ion energy on mass or plasma conditions was observed. Although films formed in the methane and ethylene systems were relatively smooth, a-C:N:H films prepared from acetylene-nitrogen plasmas had comparatively rough surfaces, most likely as a result of the strong gas-phase polymerization process produced by the ion-molecule reactions, C{sub n}H{sub y}{sup +}+C{sub 2}H{sub 2}{yields}C{sub (n+2)}H{sub y}{sup +}+H{sub 2} (n>1, y=1-3). Correlations between the a-C:N:H growth processes and the gas-phase plasma diagnostic data are discussed.},
doi = {10.1063/1.2424402},
journal = {Journal of Applied Physics},
number = 2,
volume = 101,
place = {United States},
year = {Mon Jan 15 00:00:00 EST 2007},
month = {Mon Jan 15 00:00:00 EST 2007}
}