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Title: Influence of the normalized ion flux on the constitution of alumina films deposited by plasma-assisted chemical vapor deposition

Abstract

Alumina thin films were deposited onto tempered hot working steel substrates from an AlCl{sub 3}-O{sub 2}-Ar-H{sub 2} gas mixture by plasma-assisted chemical vapor deposition. The normalized ion flux was varied during deposition through changes in precursor content while keeping the cathode voltage and the total pressure constant. As the precursor content in the total gas mixture was increased from 0.8% to 5.8%, the deposition rate increased 12-fold, while the normalized ion flux decreased by approximately 90%. The constitution, morphology, impurity incorporation, and the elastic properties of the alumina thin films were found to depend on the normalized ion flux. These changes in structure, composition, and properties induced by normalized ion flux may be understood by considering mechanisms related to surface and bulk diffusion.

Authors:
; ; ; ;  [1];  [2];  [3]
  1. Materials Chemistry, RWTH Aachen University, D-52056 Aachen (Germany)
  2. (Sweden)
  3. (Germany)
Publication Date:
OSTI Identifier:
20979499
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films; Journal Volume: 25; Journal Issue: 4; Other Information: DOI: 10.1116/1.2748802; (c) 2007 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM CHLORIDES; ALUMINIUM OXIDES; CATHODES; CHEMICAL VAPOR DEPOSITION; DIFFUSION; ELASTICITY; ELECTRIC POTENTIAL; HOT WORKING; HYDROGEN; IONS; MIXTURES; MORPHOLOGY; PLASMA; STEELS; SUBSTRATES; SURFACES; THIN FILMS

Citation Formats

Kurapov, Denis, Reiss, Jennifer, Trinh, David H., Hultman, Lars, Schneider, Jochen M., Thin Films Physics Division, Linkoeping University, S-58183 Linkoeping, and Materials Chemistry, RWTH Aachen University, D-52056 Aachen. Influence of the normalized ion flux on the constitution of alumina films deposited by plasma-assisted chemical vapor deposition. United States: N. p., 2007. Web. doi:10.1116/1.2748802.
Kurapov, Denis, Reiss, Jennifer, Trinh, David H., Hultman, Lars, Schneider, Jochen M., Thin Films Physics Division, Linkoeping University, S-58183 Linkoeping, & Materials Chemistry, RWTH Aachen University, D-52056 Aachen. Influence of the normalized ion flux on the constitution of alumina films deposited by plasma-assisted chemical vapor deposition. United States. doi:10.1116/1.2748802.
Kurapov, Denis, Reiss, Jennifer, Trinh, David H., Hultman, Lars, Schneider, Jochen M., Thin Films Physics Division, Linkoeping University, S-58183 Linkoeping, and Materials Chemistry, RWTH Aachen University, D-52056 Aachen. Sun . "Influence of the normalized ion flux on the constitution of alumina films deposited by plasma-assisted chemical vapor deposition". United States. doi:10.1116/1.2748802.
@article{osti_20979499,
title = {Influence of the normalized ion flux on the constitution of alumina films deposited by plasma-assisted chemical vapor deposition},
author = {Kurapov, Denis and Reiss, Jennifer and Trinh, David H. and Hultman, Lars and Schneider, Jochen M. and Thin Films Physics Division, Linkoeping University, S-58183 Linkoeping and Materials Chemistry, RWTH Aachen University, D-52056 Aachen},
abstractNote = {Alumina thin films were deposited onto tempered hot working steel substrates from an AlCl{sub 3}-O{sub 2}-Ar-H{sub 2} gas mixture by plasma-assisted chemical vapor deposition. The normalized ion flux was varied during deposition through changes in precursor content while keeping the cathode voltage and the total pressure constant. As the precursor content in the total gas mixture was increased from 0.8% to 5.8%, the deposition rate increased 12-fold, while the normalized ion flux decreased by approximately 90%. The constitution, morphology, impurity incorporation, and the elastic properties of the alumina thin films were found to depend on the normalized ion flux. These changes in structure, composition, and properties induced by normalized ion flux may be understood by considering mechanisms related to surface and bulk diffusion.},
doi = {10.1116/1.2748802},
journal = {Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films},
number = 4,
volume = 25,
place = {United States},
year = {Sun Jul 15 00:00:00 EDT 2007},
month = {Sun Jul 15 00:00:00 EDT 2007}
}