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Title: The role of proximity caps during the annealing of UV-ozone oxidized GaAs

Abstract

This study provides a deeper insight into the chemistry and physics of the common engineering practice of using a proximity cap, while annealing compound semiconductors such as GaAs. We have studied the cases of a GaAs proximity cap, a Si proximity cap, and no proximity cap. Using x-ray photoelectron spectroscopy, it has been found that annealing increases the gallium to arsenic ratio in the oxide layer in all cases. During the annealing of UV-ozone oxidized GaAs, it has been observed that GaAs proximity caps also serve as a sacrificial layer to accelerate the desorption of oxide species. In all cases surface deterioration due to pit formation has been observed, and the depth of pits is found to depend on the effective role played by the capping material. Energy dispersive x-ray analysis provides additional evidence that pits mainly consist of elemental As and gallium oxide, with most of the elemental As situated at the pit-substrate interface. Deposition of a thin layer of gold and subsequent annealing to 500 deg. C for 300 s under different capping conditions shows the use of a proximate cap to be practically insignificant in annealing Au deposited films.

Authors:
; ; ;  [1];  [2];  [2];  [3]
  1. Center for Emerging Device Technologies, Department of Engineering Physics, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4L7 (Canada)
  2. (Canada)
  3. (Canada) and Center for Emerging Device Technologies, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4L7 (Canada)
Publication Date:
OSTI Identifier:
20979422
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 101; Journal Issue: 11; Other Information: DOI: 10.1063/1.2740359; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; ARSENIC; CHEMICAL ANALYSIS; DEPOSITION; DESORPTION; GALLIUM; GALLIUM ARSENIDES; GALLIUM OXIDES; GOLD; LAYERS; OXIDATION; OZONE; SEMICONDUCTOR MATERIALS; SILICON; SUBSTRATES; THIN FILMS; X RADIATION; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Ghosh, S. C., Biesinger, M. C., LaPierre, R. R., Kruse, P., Surface Science Western, Room G-1, Western Science Center, University of Western Ontario, London, Ontario N6A 5B7, Center for Emerging Device Technologies, Department of Engineering Physics, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4L7, and Department of Chemistry, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4M1. The role of proximity caps during the annealing of UV-ozone oxidized GaAs. United States: N. p., 2007. Web. doi:10.1063/1.2740359.
Ghosh, S. C., Biesinger, M. C., LaPierre, R. R., Kruse, P., Surface Science Western, Room G-1, Western Science Center, University of Western Ontario, London, Ontario N6A 5B7, Center for Emerging Device Technologies, Department of Engineering Physics, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4L7, & Department of Chemistry, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4M1. The role of proximity caps during the annealing of UV-ozone oxidized GaAs. United States. doi:10.1063/1.2740359.
Ghosh, S. C., Biesinger, M. C., LaPierre, R. R., Kruse, P., Surface Science Western, Room G-1, Western Science Center, University of Western Ontario, London, Ontario N6A 5B7, Center for Emerging Device Technologies, Department of Engineering Physics, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4L7, and Department of Chemistry, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4M1. Fri . "The role of proximity caps during the annealing of UV-ozone oxidized GaAs". United States. doi:10.1063/1.2740359.
@article{osti_20979422,
title = {The role of proximity caps during the annealing of UV-ozone oxidized GaAs},
author = {Ghosh, S. C. and Biesinger, M. C. and LaPierre, R. R. and Kruse, P. and Surface Science Western, Room G-1, Western Science Center, University of Western Ontario, London, Ontario N6A 5B7 and Center for Emerging Device Technologies, Department of Engineering Physics, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4L7 and Department of Chemistry, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4M1},
abstractNote = {This study provides a deeper insight into the chemistry and physics of the common engineering practice of using a proximity cap, while annealing compound semiconductors such as GaAs. We have studied the cases of a GaAs proximity cap, a Si proximity cap, and no proximity cap. Using x-ray photoelectron spectroscopy, it has been found that annealing increases the gallium to arsenic ratio in the oxide layer in all cases. During the annealing of UV-ozone oxidized GaAs, it has been observed that GaAs proximity caps also serve as a sacrificial layer to accelerate the desorption of oxide species. In all cases surface deterioration due to pit formation has been observed, and the depth of pits is found to depend on the effective role played by the capping material. Energy dispersive x-ray analysis provides additional evidence that pits mainly consist of elemental As and gallium oxide, with most of the elemental As situated at the pit-substrate interface. Deposition of a thin layer of gold and subsequent annealing to 500 deg. C for 300 s under different capping conditions shows the use of a proximate cap to be practically insignificant in annealing Au deposited films.},
doi = {10.1063/1.2740359},
journal = {Journal of Applied Physics},
number = 11,
volume = 101,
place = {United States},
year = {Fri Jun 01 00:00:00 EDT 2007},
month = {Fri Jun 01 00:00:00 EDT 2007}
}