Effect of composition on the thermal stability of sputter deposited hafnium aluminate and nitrided hafnium aluminate dielectrics on Si (100)

Journal Article · Fri Jun 01 00:00:00 EDT 2007 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2743818· OSTI ID:20979420

Sivasubramani, P; Kim, J; Kim, M J; Gnade, B E; Wallace, R M ^[1]

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1. Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)

Hafnium aluminate (HfAlO) and nitrided hafnium aluminate (HfAlON) dielectrics were sputter deposited on Si (100) substrate. The N{sub 2}/(N{sub 2}+Ar) flow ratio was varied between 0 and 66.6% in order to vary the nitrogen concentration. The Hf/Al ratio was varied from 0.5 to 1. In situ x-ray photoelectron spectroscopy and electrical measurements were utilized to characterize the as-deposited HfAlO and HfAlON films. The thermal stability studies of the HfAlO and HfAlON thin films after a 1000 deg. C, 10 s argon rapid thermal anneal were performed using grazing incidence x-ray diffraction and backside secondary ion mass spectrometry. Suppression of crystallization and no detectible outdiffusion of hafnium and aluminum into the silicon substrate were seen for HfAlO and HfAlON thin films with a Hf/Al ratio of 0.5.

• OSTI ID: 20979420
• Journal Information: Journal of Applied Physics, Vol. 101, Issue 11; Other Information: DOI: 10.1063/1.2743818; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINATES
ALUMINIUM
ANNEALING
ARGON
CRYSTALLIZATION
DIELECTRIC MATERIALS
HAFNIUM COMPOUNDS
MASS SPECTRA
MASS SPECTROSCOPY
NITRIDATION
NITROGEN
SILICON
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 1000-4000 K
THIN FILMS
TIME DEPENDENCE
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY