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Title: Effect of composition on the thermal stability of sputter deposited hafnium aluminate and nitrided hafnium aluminate dielectrics on Si (100)

Abstract

Hafnium aluminate (HfAlO) and nitrided hafnium aluminate (HfAlON) dielectrics were sputter deposited on Si (100) substrate. The N{sub 2}/(N{sub 2}+Ar) flow ratio was varied between 0 and 66.6% in order to vary the nitrogen concentration. The Hf/Al ratio was varied from 0.5 to 1. In situ x-ray photoelectron spectroscopy and electrical measurements were utilized to characterize the as-deposited HfAlO and HfAlON films. The thermal stability studies of the HfAlO and HfAlON thin films after a 1000 deg. C, 10 s argon rapid thermal anneal were performed using grazing incidence x-ray diffraction and backside secondary ion mass spectrometry. Suppression of crystallization and no detectible outdiffusion of hafnium and aluminum into the silicon substrate were seen for HfAlO and HfAlON thin films with a Hf/Al ratio of 0.5.

Authors:
; ; ; ;  [1]
  1. Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)
Publication Date:
OSTI Identifier:
20979420
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 101; Journal Issue: 11; Other Information: DOI: 10.1063/1.2743818; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINATES; ALUMINIUM; ANNEALING; ARGON; CRYSTALLIZATION; DIELECTRIC MATERIALS; HAFNIUM COMPOUNDS; MASS SPECTRA; MASS SPECTROSCOPY; NITRIDATION; NITROGEN; SILICON; SUBSTRATES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 1000-4000 K; THIN FILMS; TIME DEPENDENCE; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Sivasubramani, P., Kim, J., Kim, M. J., Gnade, B. E., and Wallace, R. M. Effect of composition on the thermal stability of sputter deposited hafnium aluminate and nitrided hafnium aluminate dielectrics on Si (100). United States: N. p., 2007. Web. doi:10.1063/1.2743818.
Sivasubramani, P., Kim, J., Kim, M. J., Gnade, B. E., & Wallace, R. M. Effect of composition on the thermal stability of sputter deposited hafnium aluminate and nitrided hafnium aluminate dielectrics on Si (100). United States. doi:10.1063/1.2743818.
Sivasubramani, P., Kim, J., Kim, M. J., Gnade, B. E., and Wallace, R. M. Fri . "Effect of composition on the thermal stability of sputter deposited hafnium aluminate and nitrided hafnium aluminate dielectrics on Si (100)". United States. doi:10.1063/1.2743818.
@article{osti_20979420,
title = {Effect of composition on the thermal stability of sputter deposited hafnium aluminate and nitrided hafnium aluminate dielectrics on Si (100)},
author = {Sivasubramani, P. and Kim, J. and Kim, M. J. and Gnade, B. E. and Wallace, R. M.},
abstractNote = {Hafnium aluminate (HfAlO) and nitrided hafnium aluminate (HfAlON) dielectrics were sputter deposited on Si (100) substrate. The N{sub 2}/(N{sub 2}+Ar) flow ratio was varied between 0 and 66.6% in order to vary the nitrogen concentration. The Hf/Al ratio was varied from 0.5 to 1. In situ x-ray photoelectron spectroscopy and electrical measurements were utilized to characterize the as-deposited HfAlO and HfAlON films. The thermal stability studies of the HfAlO and HfAlON thin films after a 1000 deg. C, 10 s argon rapid thermal anneal were performed using grazing incidence x-ray diffraction and backside secondary ion mass spectrometry. Suppression of crystallization and no detectible outdiffusion of hafnium and aluminum into the silicon substrate were seen for HfAlO and HfAlON thin films with a Hf/Al ratio of 0.5.},
doi = {10.1063/1.2743818},
journal = {Journal of Applied Physics},
number = 11,
volume = 101,
place = {United States},
year = {Fri Jun 01 00:00:00 EDT 2007},
month = {Fri Jun 01 00:00:00 EDT 2007}
}