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Title: Effect of arc suppression on the physical properties of low temperature dc magnetron sputtered tantalum thin films

Abstract

Arcing is a common phenomenon in the sputtering process. Arcs and glow discharges emit electrons which may influence the physical properties of films. This article reports the properties of tantalum (Ta) thin films prepared by continuous dc magnetron sputtering in normal and arc-suppression modes. The substrate temperature was varied in the range of 300-673 K. The tantalum films were {approx}1.8 {mu}m thick and have good adherence to 316 stainless steel and single-crystal silicon substrates. The phase of the Ta thin film determines the electrical and tribological properties. The films deposited at 300 K using both methods were crystallized in a tetragonal structure ({beta} phase) with a smooth surface (grain size of {approx}10 nm) and exhibited an electrical resistivity of {approx}194 {mu}{omega} cm and a hardness of {approx}20 GPa. When the substrate temperature was 473 K and higher, the arc-suppression mode appears to influence the films to crystallize in the {alpha} phase with a grain size of {approx}40 nm, whereas the normal power mode gave mixed phases {beta} and {alpha} beyond 473 K, the arc-suppression mode yields larger grain sizes in the Ta thin films and the hardness decreases. These changes in the physical properties in arc-suppression mode are attributed tomore » either the change in plasma characteristics or the energetic particle bombardment onto the substrate, or both.« less

Authors:
; ; ;  [1];  [2]
  1. Department of Physics, Indian Institute of Technology Madras, Chennai 600036 (India)
  2. (India)
Publication Date:
OSTI Identifier:
20979397
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films; Journal Volume: 25; Journal Issue: 2; Other Information: DOI: 10.1116/1.2699296; (c) 2007 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ADHESION; CRYSTALLIZATION; DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRONS; GLOW DISCHARGES; GRAIN SIZE; HARDNESS; INHIBITION; MAGNETRONS; MONOCRYSTALS; SILICON; SPUTTERING; STAINLESS STEELS; SUBSTRATES; TANTALUM; TEMPERATURE RANGE 0065-0273 K; THIN FILMS; TRIBOLOGY

Citation Formats

Subrahmanyam, A., Valleti, Krishna, Joshi, Srikant V., Sundararajan, G., and ARCI, Balapur, Hyderabad 500005. Effect of arc suppression on the physical properties of low temperature dc magnetron sputtered tantalum thin films. United States: N. p., 2007. Web. doi:10.1116/1.2699296.
Subrahmanyam, A., Valleti, Krishna, Joshi, Srikant V., Sundararajan, G., & ARCI, Balapur, Hyderabad 500005. Effect of arc suppression on the physical properties of low temperature dc magnetron sputtered tantalum thin films. United States. doi:10.1116/1.2699296.
Subrahmanyam, A., Valleti, Krishna, Joshi, Srikant V., Sundararajan, G., and ARCI, Balapur, Hyderabad 500005. Thu . "Effect of arc suppression on the physical properties of low temperature dc magnetron sputtered tantalum thin films". United States. doi:10.1116/1.2699296.
@article{osti_20979397,
title = {Effect of arc suppression on the physical properties of low temperature dc magnetron sputtered tantalum thin films},
author = {Subrahmanyam, A. and Valleti, Krishna and Joshi, Srikant V. and Sundararajan, G. and ARCI, Balapur, Hyderabad 500005},
abstractNote = {Arcing is a common phenomenon in the sputtering process. Arcs and glow discharges emit electrons which may influence the physical properties of films. This article reports the properties of tantalum (Ta) thin films prepared by continuous dc magnetron sputtering in normal and arc-suppression modes. The substrate temperature was varied in the range of 300-673 K. The tantalum films were {approx}1.8 {mu}m thick and have good adherence to 316 stainless steel and single-crystal silicon substrates. The phase of the Ta thin film determines the electrical and tribological properties. The films deposited at 300 K using both methods were crystallized in a tetragonal structure ({beta} phase) with a smooth surface (grain size of {approx}10 nm) and exhibited an electrical resistivity of {approx}194 {mu}{omega} cm and a hardness of {approx}20 GPa. When the substrate temperature was 473 K and higher, the arc-suppression mode appears to influence the films to crystallize in the {alpha} phase with a grain size of {approx}40 nm, whereas the normal power mode gave mixed phases {beta} and {alpha} beyond 473 K, the arc-suppression mode yields larger grain sizes in the Ta thin films and the hardness decreases. These changes in the physical properties in arc-suppression mode are attributed to either the change in plasma characteristics or the energetic particle bombardment onto the substrate, or both.},
doi = {10.1116/1.2699296},
journal = {Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films},
number = 2,
volume = 25,
place = {United States},
year = {Thu Mar 15 00:00:00 EDT 2007},
month = {Thu Mar 15 00:00:00 EDT 2007}
}