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Title: Comparison of surface reactivity of CN, NH, and NH{sub 2} radicals during deposition of amorphous carbon nitride films from inductively coupled rf plasmas

Abstract

The interactions of CN, NH, and NH{sub 2} radicals with carbon nitride films during inductively coupled rf plasma deposition were measured using the imaging of radicals interacting with surfaces (IRIS) technique. The surface reactivity R for each species was obtained at various gas compositions of N{sub 2}/CH{sub 4} and NH{sub 3}/CH{sub 4} and applied rf powers. R values for CN and NH radicals ranged from 0.85 to 1.0 and 0.1 to 0.2, respectively, and show very little dependence on the gas compositions and applied power. In contrast, R values for NH{sub 2} decreased from 0.6{+-}1 to 0.2{+-}0.1 when the CH{sub 4} fraction in the plasma was increased from 0% to 70%. The essentially 100% scatter measured for NH suggests that it does not contribute significantly to film growth in these systems. The effect of ion bombardment on the R values in these systems was analyzed by applying a dc bias to the substrate. In general, R values were found to decrease when a +200 V bias was applied. Results indicate that energetic ions are important in surface production of the species studied with IRIS. The plasmas have also been characterized by mass spectrometry, including the measurements of ion energy distributions.more » Mechanisms for film deposition in these carbon nitride systems are discussed incorporating the authors' gas-phase and gas-surface interface data.« less

Authors:
;  [1]
  1. Department of Chemistry, Colorado State University, Fort Collins, Colorado 80523-1872 (United States)
Publication Date:
OSTI Identifier:
20979396
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films; Journal Volume: 25; Journal Issue: 2; Other Information: DOI: 10.1116/1.2699216; (c) 2007 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AMMONIA; AMORPHOUS STATE; CARBON NITRIDES; CHEMICAL VAPOR DEPOSITION; COMPARATIVE EVALUATIONS; ENERGY SPECTRA; HYDROGEN; ION BEAMS; MASS SPECTRA; MASS SPECTROSCOPY; METHANE; PLASMA; RADICALS; SURFACES; TAIL IONS; THIN FILMS

Citation Formats

Liu Dongping, and Fisher, Ellen R. Comparison of surface reactivity of CN, NH, and NH{sub 2} radicals during deposition of amorphous carbon nitride films from inductively coupled rf plasmas. United States: N. p., 2007. Web. doi:10.1116/1.2699216.
Liu Dongping, & Fisher, Ellen R. Comparison of surface reactivity of CN, NH, and NH{sub 2} radicals during deposition of amorphous carbon nitride films from inductively coupled rf plasmas. United States. doi:10.1116/1.2699216.
Liu Dongping, and Fisher, Ellen R. Thu . "Comparison of surface reactivity of CN, NH, and NH{sub 2} radicals during deposition of amorphous carbon nitride films from inductively coupled rf plasmas". United States. doi:10.1116/1.2699216.
@article{osti_20979396,
title = {Comparison of surface reactivity of CN, NH, and NH{sub 2} radicals during deposition of amorphous carbon nitride films from inductively coupled rf plasmas},
author = {Liu Dongping and Fisher, Ellen R.},
abstractNote = {The interactions of CN, NH, and NH{sub 2} radicals with carbon nitride films during inductively coupled rf plasma deposition were measured using the imaging of radicals interacting with surfaces (IRIS) technique. The surface reactivity R for each species was obtained at various gas compositions of N{sub 2}/CH{sub 4} and NH{sub 3}/CH{sub 4} and applied rf powers. R values for CN and NH radicals ranged from 0.85 to 1.0 and 0.1 to 0.2, respectively, and show very little dependence on the gas compositions and applied power. In contrast, R values for NH{sub 2} decreased from 0.6{+-}1 to 0.2{+-}0.1 when the CH{sub 4} fraction in the plasma was increased from 0% to 70%. The essentially 100% scatter measured for NH suggests that it does not contribute significantly to film growth in these systems. The effect of ion bombardment on the R values in these systems was analyzed by applying a dc bias to the substrate. In general, R values were found to decrease when a +200 V bias was applied. Results indicate that energetic ions are important in surface production of the species studied with IRIS. The plasmas have also been characterized by mass spectrometry, including the measurements of ion energy distributions. Mechanisms for film deposition in these carbon nitride systems are discussed incorporating the authors' gas-phase and gas-surface interface data.},
doi = {10.1116/1.2699216},
journal = {Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films},
number = 2,
volume = 25,
place = {United States},
year = {Thu Mar 15 00:00:00 EDT 2007},
month = {Thu Mar 15 00:00:00 EDT 2007}
}