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Title: 1.5-nm-thick silicon oxide gate films grown at 150 deg. C using modified reactive ion beam deposition with pyrolytic-gas passivation

Abstract

Low-temperature ultrathin silicon oxide gate film growth using modified reactive ion beam deposition (RIBD) with an in situ pyrolytic-gas passivation (PGP) method is described. RIBD uses low-energy-controlled reactive and ionized species and potentializes low-temperature film growth. By combining RIBD with PGP using N{sub 2}O and NF{sub 3}, 1.5-nm-thick silicon oxide gate films with high-potential barrier height energy, 3.51 eV, and low-leakage current, less than about 10{sup -5} A/cm{sup 2} at 2 MV/cm, can be obtained at a growth temperature of 150 deg. C. From an evaluation of number densities of N, F, and O atoms near the 1.5-5.0-nm-thick RIBD-with-PGP silicon oxide films/Si(100) interfaces, it is believed that interfacial N and F atoms contribute to improve the electrical characteristics and F effectively compensates the residual inconsistent-state bonding sites after the N passivation.

Authors:
 [1]
  1. NTT Microsystem Integration Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198 (Japan)
Publication Date:
OSTI Identifier:
20979392
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films; Journal Volume: 25; Journal Issue: 2; Other Information: DOI: 10.1116/1.2699503; (c) 2007 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATOMS; BONDING; DEPOSITION; EV RANGE 01-10; ION BEAMS; LEAKAGE CURRENT; NITROGEN FLUORIDES; NITROUS OXIDE; PASSIVATION; SEMICONDUCTOR MATERIALS; SILICON; SILICON OXIDES; TEMPERATURE RANGE 0065-0273 K; THIN FILMS

Citation Formats

Yamada, Hiroshi. 1.5-nm-thick silicon oxide gate films grown at 150 deg. C using modified reactive ion beam deposition with pyrolytic-gas passivation. United States: N. p., 2007. Web. doi:10.1116/1.2699503.
Yamada, Hiroshi. 1.5-nm-thick silicon oxide gate films grown at 150 deg. C using modified reactive ion beam deposition with pyrolytic-gas passivation. United States. doi:10.1116/1.2699503.
Yamada, Hiroshi. Thu . "1.5-nm-thick silicon oxide gate films grown at 150 deg. C using modified reactive ion beam deposition with pyrolytic-gas passivation". United States. doi:10.1116/1.2699503.
@article{osti_20979392,
title = {1.5-nm-thick silicon oxide gate films grown at 150 deg. C using modified reactive ion beam deposition with pyrolytic-gas passivation},
author = {Yamada, Hiroshi},
abstractNote = {Low-temperature ultrathin silicon oxide gate film growth using modified reactive ion beam deposition (RIBD) with an in situ pyrolytic-gas passivation (PGP) method is described. RIBD uses low-energy-controlled reactive and ionized species and potentializes low-temperature film growth. By combining RIBD with PGP using N{sub 2}O and NF{sub 3}, 1.5-nm-thick silicon oxide gate films with high-potential barrier height energy, 3.51 eV, and low-leakage current, less than about 10{sup -5} A/cm{sup 2} at 2 MV/cm, can be obtained at a growth temperature of 150 deg. C. From an evaluation of number densities of N, F, and O atoms near the 1.5-5.0-nm-thick RIBD-with-PGP silicon oxide films/Si(100) interfaces, it is believed that interfacial N and F atoms contribute to improve the electrical characteristics and F effectively compensates the residual inconsistent-state bonding sites after the N passivation.},
doi = {10.1116/1.2699503},
journal = {Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films},
number = 2,
volume = 25,
place = {United States},
year = {Thu Mar 15 00:00:00 EDT 2007},
month = {Thu Mar 15 00:00:00 EDT 2007}
}