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Title: Sticking probability of Ti atoms in magnetron sputtering deposition evaluated from the spatial distribution of Ti atom density

Abstract

By comparing the spatial distribution of Ti atom density in front of a planar substrate with a diffusion model proposed by Chantry [P. J. Chantry, J. Appl. Phys. 62, 1141 (1987)], the authors evaluated the sticking probability of Ti atoms in magnetron sputtering deposition. The spatial distribution of Ti atom density was measured precisely by laser-induced fluorescence imaging spectroscopy. They found that the sticking probability of Ti atoms during the growth of Ti film was 0.9{+-}0.2. This result suggests the possibility that the sticking probability is less than unity, which is widely assumed in many simulation studies. The sticking probability was almost unchanged when the discharge pressure and power were varied. In addition, heating the substrate at 250 deg. C and biasing it at a self-bias voltage of -200 V by a rf power had no significant influence on the sticking probability.

Authors:
;  [1]
  1. Department of Electrical Engineering and Computer Science, Nagoya University, Nagoya 464-8603 (Japan)
Publication Date:
OSTI Identifier:
20979388
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films; Journal Volume: 25; Journal Issue: 2; Other Information: DOI: 10.1116/1.2539256; (c) 2007 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ATOMS; DENSITY; DEPOSITION; FLUORESCENCE SPECTROSCOPY; LASER SPECTROSCOPY; MAGNETRONS; PROBABILITY; SPATIAL DISTRIBUTION; SPUTTERING; SUBSTRATES; THIN FILMS; TITANIUM

Citation Formats

Nafarizal, N., and Sasaki, K. Sticking probability of Ti atoms in magnetron sputtering deposition evaluated from the spatial distribution of Ti atom density. United States: N. p., 2007. Web. doi:10.1116/1.2539256.
Nafarizal, N., & Sasaki, K. Sticking probability of Ti atoms in magnetron sputtering deposition evaluated from the spatial distribution of Ti atom density. United States. doi:10.1116/1.2539256.
Nafarizal, N., and Sasaki, K. Thu . "Sticking probability of Ti atoms in magnetron sputtering deposition evaluated from the spatial distribution of Ti atom density". United States. doi:10.1116/1.2539256.
@article{osti_20979388,
title = {Sticking probability of Ti atoms in magnetron sputtering deposition evaluated from the spatial distribution of Ti atom density},
author = {Nafarizal, N. and Sasaki, K.},
abstractNote = {By comparing the spatial distribution of Ti atom density in front of a planar substrate with a diffusion model proposed by Chantry [P. J. Chantry, J. Appl. Phys. 62, 1141 (1987)], the authors evaluated the sticking probability of Ti atoms in magnetron sputtering deposition. The spatial distribution of Ti atom density was measured precisely by laser-induced fluorescence imaging spectroscopy. They found that the sticking probability of Ti atoms during the growth of Ti film was 0.9{+-}0.2. This result suggests the possibility that the sticking probability is less than unity, which is widely assumed in many simulation studies. The sticking probability was almost unchanged when the discharge pressure and power were varied. In addition, heating the substrate at 250 deg. C and biasing it at a self-bias voltage of -200 V by a rf power had no significant influence on the sticking probability.},
doi = {10.1116/1.2539256},
journal = {Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films},
number = 2,
volume = 25,
place = {United States},
year = {Thu Mar 15 00:00:00 EDT 2007},
month = {Thu Mar 15 00:00:00 EDT 2007}
}