skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Effects of deposition parameters on the structure of AlN coatings grown by reactive magnetron sputtering

Abstract

AlN films were deposited on microscopy glass slide and silicon (111 orientation) substrates by reactive ac magnetron sputtering using two nitrogen concentrations and three discharge powers of 1.5, 2.5, and 5.0 kW. X-ray diffraction studies showed that films prepared on glass and Si substrates were of hexagonal wurtizite phase. Films on Si substrates also contained small amounts of the cubic phase of AlN besides the predominantly hexagonal wurtizite phase. AlN coatings on glass substrates were textured towards the (00{center_dot}2) plane; this preferred orientation of crystals was found to decrease with increase in sputtering power. Scanning electron microscopy studies showed that AlN films prepared at higher nitrogen concentration have a microstructure consisting of pebblelike crystals, some of which were hexagonal in shape. The crystal size in the coatings increased with sputtering power and was in the range of 70-230 nm.

Authors:
;  [1]
  1. Department of Mechanical Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States)
Publication Date:
OSTI Identifier:
20979372
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films; Journal Volume: 25; Journal Issue: 3; Other Information: DOI: 10.1116/1.2730513; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; COATINGS; CRYSTAL STRUCTURE; CRYSTALS; DEPOSITION; GLASS; GRAIN ORIENTATION; NITROGEN; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; SILICON; SPUTTERING; SUBSTRATES; THIN FILMS; X-RAY DIFFRACTION

Citation Formats

Khanna, Atul, and Bhat, Deepak G. Effects of deposition parameters on the structure of AlN coatings grown by reactive magnetron sputtering. United States: N. p., 2007. Web. doi:10.1116/1.2730513.
Khanna, Atul, & Bhat, Deepak G. Effects of deposition parameters on the structure of AlN coatings grown by reactive magnetron sputtering. United States. doi:10.1116/1.2730513.
Khanna, Atul, and Bhat, Deepak G. Tue . "Effects of deposition parameters on the structure of AlN coatings grown by reactive magnetron sputtering". United States. doi:10.1116/1.2730513.
@article{osti_20979372,
title = {Effects of deposition parameters on the structure of AlN coatings grown by reactive magnetron sputtering},
author = {Khanna, Atul and Bhat, Deepak G.},
abstractNote = {AlN films were deposited on microscopy glass slide and silicon (111 orientation) substrates by reactive ac magnetron sputtering using two nitrogen concentrations and three discharge powers of 1.5, 2.5, and 5.0 kW. X-ray diffraction studies showed that films prepared on glass and Si substrates were of hexagonal wurtizite phase. Films on Si substrates also contained small amounts of the cubic phase of AlN besides the predominantly hexagonal wurtizite phase. AlN coatings on glass substrates were textured towards the (00{center_dot}2) plane; this preferred orientation of crystals was found to decrease with increase in sputtering power. Scanning electron microscopy studies showed that AlN films prepared at higher nitrogen concentration have a microstructure consisting of pebblelike crystals, some of which were hexagonal in shape. The crystal size in the coatings increased with sputtering power and was in the range of 70-230 nm.},
doi = {10.1116/1.2730513},
journal = {Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films},
number = 3,
volume = 25,
place = {United States},
year = {Tue May 15 00:00:00 EDT 2007},
month = {Tue May 15 00:00:00 EDT 2007}
}