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Title: Effects of the deposition parameters on the growth of ultrathin and thin SiO{sub 2} films

Abstract

SiO{sub 2} ultrathin and thin films have been deposited on single-crystal Si substrates by means of nonreactive radio frequency magnetron sputtering. The temperature of the substrate and the deposition times have been varied in the range of 200-500 deg. C and 60-14 400 s, respectively. The average deposition rate has a range of 0.5-5 nm/min and tends to decrease with the increase of the substrate temperature. Two different growth regimes may be observed for ultrathin and thin films, the transition taking place in the range of 5-10 nm depending on the substrate temperature. The roughness of the film surface and the grain dimensions do increase with the substrate temperature for short deposition times (t{<=}300 s), whereas their behavior is less defined for intermediate ones (300 s<t<1800 s). Finally, for long deposition times (t>1800 s) the roughness increases again with T, and its slope is higher, the higher the substrate temperature is.

Authors:
; ; ; ;  [1];  [2];  [2]
  1. Department of Physical Chemistry and INSTM, University of Pavia, Via Taramelli 16, 27100 Pavia (Italy)
  2. (Italy)
Publication Date:
OSTI Identifier:
20979368
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films; Journal Volume: 25; Journal Issue: 3; Other Information: DOI: 10.1116/1.2714958; (c) 2007 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DEPOSITION; DIELECTRIC MATERIALS; MAGNETRONS; MONOCRYSTALS; RADIOWAVE RADIATION; ROUGHNESS; SILICA; SILICON OXIDES; SPUTTERING; SUBSTRATES; SURFACES; THIN FILMS

Citation Formats

Quartarone, E., Mustarelli, P., Grandi, S., Marabelli, F., Bontempi, E., Department of Physics 'A. Volta', University of Pavia and INFM, Via Bassi 6, 27100 Pavia, and INSTM and Laboratorio di Chimica per le Technologie, University of Brescia, Via Branze 38, 25123 Brescia. Effects of the deposition parameters on the growth of ultrathin and thin SiO{sub 2} films. United States: N. p., 2007. Web. doi:10.1116/1.2714958.
Quartarone, E., Mustarelli, P., Grandi, S., Marabelli, F., Bontempi, E., Department of Physics 'A. Volta', University of Pavia and INFM, Via Bassi 6, 27100 Pavia, & INSTM and Laboratorio di Chimica per le Technologie, University of Brescia, Via Branze 38, 25123 Brescia. Effects of the deposition parameters on the growth of ultrathin and thin SiO{sub 2} films. United States. doi:10.1116/1.2714958.
Quartarone, E., Mustarelli, P., Grandi, S., Marabelli, F., Bontempi, E., Department of Physics 'A. Volta', University of Pavia and INFM, Via Bassi 6, 27100 Pavia, and INSTM and Laboratorio di Chimica per le Technologie, University of Brescia, Via Branze 38, 25123 Brescia. Tue . "Effects of the deposition parameters on the growth of ultrathin and thin SiO{sub 2} films". United States. doi:10.1116/1.2714958.
@article{osti_20979368,
title = {Effects of the deposition parameters on the growth of ultrathin and thin SiO{sub 2} films},
author = {Quartarone, E. and Mustarelli, P. and Grandi, S. and Marabelli, F. and Bontempi, E. and Department of Physics 'A. Volta', University of Pavia and INFM, Via Bassi 6, 27100 Pavia and INSTM and Laboratorio di Chimica per le Technologie, University of Brescia, Via Branze 38, 25123 Brescia},
abstractNote = {SiO{sub 2} ultrathin and thin films have been deposited on single-crystal Si substrates by means of nonreactive radio frequency magnetron sputtering. The temperature of the substrate and the deposition times have been varied in the range of 200-500 deg. C and 60-14 400 s, respectively. The average deposition rate has a range of 0.5-5 nm/min and tends to decrease with the increase of the substrate temperature. Two different growth regimes may be observed for ultrathin and thin films, the transition taking place in the range of 5-10 nm depending on the substrate temperature. The roughness of the film surface and the grain dimensions do increase with the substrate temperature for short deposition times (t{<=}300 s), whereas their behavior is less defined for intermediate ones (300 s<t<1800 s). Finally, for long deposition times (t>1800 s) the roughness increases again with T, and its slope is higher, the higher the substrate temperature is.},
doi = {10.1116/1.2714958},
journal = {Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films},
number = 3,
volume = 25,
place = {United States},
year = {Tue May 15 00:00:00 EDT 2007},
month = {Tue May 15 00:00:00 EDT 2007}
}
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