skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Reactive and anisotropic etching of magnetic tunnel junction films using pulse-time-modulated plasma

Abstract

Reactive and anisotropic etching of magnetic tunnel junction (MTJ) stacked films has been achieved using pulse-time-modulated (TM) plasma. While corrosion and delamination of MTJs are observed in continuous wave discharge plasma, a chlorine pulse-time-modulated plasma achieved a high MTJ etching rate without corrosion or delamination. The authors think that the negative ions enhance the chemical reactions on the surface of magnetic films. The magnetic characteristics are also significantly improved by using TM plasma because of reduced residues and improved tapered profiles. Accordingly, TM plasma etching is a promising candidate for high-rate and damage-free MTJ etching for magnetoresistive random access memory devices.

Authors:
; ; ;  [1];  [2];  [2]
  1. Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8557, Japan and System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara 229-1198 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
20979364
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films; Journal Volume: 25; Journal Issue: 3; Other Information: DOI: 10.1116/1.2712192; (c) 2007 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANIONS; ANISOTROPY; CHLORINE; CORROSION; ETCHING; FERROMAGNETIC MATERIALS; IRON ALLOYS; MAGNETORESISTANCE; NICKEL ALLOYS; PLASMA; SUPERCONDUCTING JUNCTIONS; SURFACES; THIN FILMS; TUNNEL EFFECT

Citation Formats

Mukai, Tomonori, Ohshima, Norikazu, Hada, Hiromitsu, Samukawa, Seiji, System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara 229-1198, and Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8557. Reactive and anisotropic etching of magnetic tunnel junction films using pulse-time-modulated plasma. United States: N. p., 2007. Web. doi:10.1116/1.2712192.
Mukai, Tomonori, Ohshima, Norikazu, Hada, Hiromitsu, Samukawa, Seiji, System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara 229-1198, & Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8557. Reactive and anisotropic etching of magnetic tunnel junction films using pulse-time-modulated plasma. United States. doi:10.1116/1.2712192.
Mukai, Tomonori, Ohshima, Norikazu, Hada, Hiromitsu, Samukawa, Seiji, System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara 229-1198, and Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8557. Tue . "Reactive and anisotropic etching of magnetic tunnel junction films using pulse-time-modulated plasma". United States. doi:10.1116/1.2712192.
@article{osti_20979364,
title = {Reactive and anisotropic etching of magnetic tunnel junction films using pulse-time-modulated plasma},
author = {Mukai, Tomonori and Ohshima, Norikazu and Hada, Hiromitsu and Samukawa, Seiji and System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara 229-1198 and Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8557},
abstractNote = {Reactive and anisotropic etching of magnetic tunnel junction (MTJ) stacked films has been achieved using pulse-time-modulated (TM) plasma. While corrosion and delamination of MTJs are observed in continuous wave discharge plasma, a chlorine pulse-time-modulated plasma achieved a high MTJ etching rate without corrosion or delamination. The authors think that the negative ions enhance the chemical reactions on the surface of magnetic films. The magnetic characteristics are also significantly improved by using TM plasma because of reduced residues and improved tapered profiles. Accordingly, TM plasma etching is a promising candidate for high-rate and damage-free MTJ etching for magnetoresistive random access memory devices.},
doi = {10.1116/1.2712192},
journal = {Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films},
number = 3,
volume = 25,
place = {United States},
year = {Tue May 15 00:00:00 EDT 2007},
month = {Tue May 15 00:00:00 EDT 2007}
}