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Title: Influence of the positive ion composition on the ion-assisted chemical etch yield of SrTiO{sub 3} films in Ar/SF{sub 6} plasmas

Abstract

Langlois et al. [Appl. Phys. Lett. 87, 131503 (2005)] have demonstrated that the etch yield of SrTiO{sub 3} films in Ar/SF{sub 6} plasmas decreases as the concentration fraction of molecular ions in the plasma increases. Introducing the concept of effective mass for both ions and SrTiO{sub 3}, these experimental results have quantitatively been explained in the framework of a well-established model originally developed to describe the sputtering of single-atom materials by nonreactive monoatomic ions. This model has, however, ignored the dissociation of molecular ions occurring as these particles impact the material surface. In the present article, the influence of the positive ion composition on the ion-assisted chemical etch yield of SrTiO{sub 3} films in Ar/SF{sub 6} plasmas is reexamined to the light of this consideration. A rate model accounting for the dissociation of the various molecular ions is proposed and validated using experimental data. It is found that even though a specific ion species may not be the most important charge carrier in the plasma, its contribution to the plasma etching dynamics may still be the most significant.

Authors:
; ; ; ;  [1];  [2]
  1. Departement de Physique, Universite de Montreal, Montreal, Quebec H3C 3J7 (Canada)
  2. (Canada)
Publication Date:
OSTI Identifier:
20979363
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films; Journal Volume: 25; Journal Issue: 3; Other Information: DOI: 10.1116/1.2713410; (c) 2007 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ARGON COMPOUNDS; CATIONS; EFFECTIVE MASS; ETCHING; MOLECULAR IONS; PLASMA; SPUTTERING; STRONTIUM TITANATES; SULFUR FLUORIDES; THIN FILMS

Citation Formats

Stafford, L., Langlois, O., Margot, J., Gaidi, M., Chaker, M., and INRS-Energie, Materiaux et Telecommunications, Varennes, Quebec J3X 1S2. Influence of the positive ion composition on the ion-assisted chemical etch yield of SrTiO{sub 3} films in Ar/SF{sub 6} plasmas. United States: N. p., 2007. Web. doi:10.1116/1.2713410.
Stafford, L., Langlois, O., Margot, J., Gaidi, M., Chaker, M., & INRS-Energie, Materiaux et Telecommunications, Varennes, Quebec J3X 1S2. Influence of the positive ion composition on the ion-assisted chemical etch yield of SrTiO{sub 3} films in Ar/SF{sub 6} plasmas. United States. doi:10.1116/1.2713410.
Stafford, L., Langlois, O., Margot, J., Gaidi, M., Chaker, M., and INRS-Energie, Materiaux et Telecommunications, Varennes, Quebec J3X 1S2. Tue . "Influence of the positive ion composition on the ion-assisted chemical etch yield of SrTiO{sub 3} films in Ar/SF{sub 6} plasmas". United States. doi:10.1116/1.2713410.
@article{osti_20979363,
title = {Influence of the positive ion composition on the ion-assisted chemical etch yield of SrTiO{sub 3} films in Ar/SF{sub 6} plasmas},
author = {Stafford, L. and Langlois, O. and Margot, J. and Gaidi, M. and Chaker, M. and INRS-Energie, Materiaux et Telecommunications, Varennes, Quebec J3X 1S2},
abstractNote = {Langlois et al. [Appl. Phys. Lett. 87, 131503 (2005)] have demonstrated that the etch yield of SrTiO{sub 3} films in Ar/SF{sub 6} plasmas decreases as the concentration fraction of molecular ions in the plasma increases. Introducing the concept of effective mass for both ions and SrTiO{sub 3}, these experimental results have quantitatively been explained in the framework of a well-established model originally developed to describe the sputtering of single-atom materials by nonreactive monoatomic ions. This model has, however, ignored the dissociation of molecular ions occurring as these particles impact the material surface. In the present article, the influence of the positive ion composition on the ion-assisted chemical etch yield of SrTiO{sub 3} films in Ar/SF{sub 6} plasmas is reexamined to the light of this consideration. A rate model accounting for the dissociation of the various molecular ions is proposed and validated using experimental data. It is found that even though a specific ion species may not be the most important charge carrier in the plasma, its contribution to the plasma etching dynamics may still be the most significant.},
doi = {10.1116/1.2713410},
journal = {Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films},
number = 3,
volume = 25,
place = {United States},
year = {Tue May 15 00:00:00 EDT 2007},
month = {Tue May 15 00:00:00 EDT 2007}
}